BC847S

BC847S BC847S E2 B2 C1 SC70-6 Mark: 1C pin #1 C2 B1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07. Absolute Maximum Ratings* Symbol VCEO VCES VCBO VEBO IC TJ, Tstg Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25°C unless otherwise noted Parameter Value 45 50 50 6.0 200 -55 to +150 Units V V V V mA °C 4 Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max BC847S 300 2.4 415 Units mW mW/°C °C/W 2001 Fairchild Semiconductor Corporation Rev.A1 B C847S NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150°C 45 50 50 6.0 15 5.0 V V V V nA µA ON CHARACTERISTICS hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V 110 630 0.25 0.65 0.7 0.77 V V V V 0.58 SMALL SIGNAL CHARACTERISTICS fT Cobo Current Gain - Bandwidth Product Output Capacitance IC = 20 mA, VCE = 5.0, f = 100 mHz VCB = 10 V, f = 1.0 MHz 200 2.0 MHz pF Typical Characteristics 1200 1000 800 600 25 °C 125 °C VCESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current V CE = 5.0 V Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 125 °C β = 10 0.15 0.1 0.05 0.1 25 °C - 40 °C 400 - 40 °C 200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 1 10 I C - COLLECTOR CURRENT (mA) 100 BC847S NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics VBESAT - COLLECTOR-EMITTER VOLTAGE (V) 1 - 40 ° C VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 1 0.8 0.6 125 ° C - 40 ° C 25 ° C 0.8 0.6 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 25 ° C 125 ° C β = 10 0.4 V CE = 5.0 V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 40 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) 10 VCB = 45V CAPACITANCE (pF) 4 3 5 Input and Output Capacitance vs Reverse Bias Voltage f = 1.0 MHz 1 C te 2 1 0 C ob 4 20 0.1 25 50 75 100 125 TA - AMBIE NT TEMP ERATURE ( ° C) 150 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) V CE - COLLECTOR VOLTAGE (V) 10 7 5 150 MHz 175 MHz CHARAC TERIS TICS R ELATI VE TO VALUE AT T A = 25 C Contours of Constant Gain Bandwidth Product (f T ) Normalized Collect or-Cutoff Current vs Ambient Temperature ° 100 1000 100 3 2 125 MHz 100 MHz 75 MHz 10 1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 1 25 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( °C) 150 BC847S NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency 10 NF - NOISE FIGURE (dB) I C = 200 µA, R S = 10 kΩ I C = 100 µA, R S = 10 kΩ I C = 1.0 mA, R S = 500 Ω 4 I C = 1.0 mA, R S = 5.0 kΩ V CE = 5.0V 0 0.0001 0.001 0.01 0.1 1 f - FREQUENCY (MHz) 10 100 NF - NOISE FIGURE (dB) 5 Wideband Noise Frequency vs Source Resistance V CE = 5.0 V 8 4 3 2 1 0 BANDWIDTH = 15.7 kHz 6 I C = 100 µA I C = 30 µA 2 I C = 10 µA 2,000 5,000 10,000 20,000 50,000 100,000 1,000 R S - SOURCE RESISTANCE (Ω ) Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) 500 400 SC70-6 300 200 100 0 0 25 50 75 100 TEMPERATURE (º C) 125 150 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H4