BC847S

BC847S Elektronische Bauelemente RoHS Compliant Product NPN Silicon Multi-Chip Transistor SOT-363 .055(1.40) .047(1.20) .026TYP (0.65T YP) .021REF (0.525)REF .096(2.45) .085(2.15) 8 o 0 o * Features Power dissipation PCM : 0.3 W (Tamp.= 25 C) O .053(1.35) .045(1.15) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 50 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) C1 B2 E2 .043(1.10) .035(0.90) E1 B1 C2 Dimensions in inches and (millimeters) Electrical Characteristics( Tamb=25 C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE(1) VCE(sat) Collector-emitter saturation voltage VCE(sat)(2) VBE Base-emitter voltage VBE(2) Transition frequency Collector output capacitance Test conditions MIN TYP MAX UNIT V V V O Ic=10µA, IE=0 Ic=10mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=20mA , f=100MHz VCB=10V, IE=0, f=1MHz 50 45 6 15 110 630 0.25 0.65 0.7 0.77 200 2 nA V V V V MHz pF fT Cob http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 1 of 3 BC847S Elektronische Bauelemente NPN Silicon Multi-Chip Transistor Typical Characteristics 1200 1000 800 600 25 °C 125 °C VCESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current V CE = 5.0 V Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 125 °C β = 10 0.15 0.1 0.05 0.1 25 °C - 40 °C 400 - 40 °C 200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 1 10 I C - COLLECTOR CURRENT (mA) 100 VBESAT - COLLECTOR-EMITTER VOLTAGE (V) 1 - 40 ° C VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 1 0.8 0.6 125 ° C - 40 ° C 25 ° C 0.8 0.6 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 25 ° C 125 ° C β = 10 0.4 V CE = 5.0 V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 40 CHARAC TERIS TICS R ELATI VE TO VALUE AT T A = 25 C Contours of Constant Gain Bandwidth Product (f T ) V CE - COLLECTOR VOLTAGE (V) 10 7 5 150 MHz 175 MHz Normalized Collect or-Cutoff Current vs Ambient Temperature ° 100 1000 100 3 2 125 MHz 100 MHz 75 MHz 10 1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 1 25 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( °C) 150 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 2 of 3 BC847S Elektronische Bauelemente NPN Silicon Multi-chip Transistor CHARAC TERIS TICS R ELATI VE TO VALUE AT T A = 25 C Contours of Constant Gain Bandwidth Product (f T ) V CE - COLLECTOR VOLTAGE (V) 10 7 5 150 MHz 175 MHz Normalized Collect or-Cutoff Current vs Ambient Temperature ° 100 1000 100 3 2 125 MHz 100 MHz 75 MHz 10 1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 1 25 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( °C) 150 Noise Figure vs Frequency 10 NF - NOISE FIGURE (dB) I C = 200 µA, R S = 10 kΩ I C = 100 µA, R S = 10 kΩ I C = 1.0 mA, R S = 500 Ω 4 I C = 1.0 mA, R S = 5.0 kΩ V CE = 5.0V 0 0.0001 0.001 0.01 0.1 1 f - FREQUENCY (MHz) 10 100 NF - NOISE FIGURE (dB) 5 Wideband Noise Frequency vs Source Resistance V CE = 5.0 V 8 4 3 2 1 0 BANDWIDTH = 15.7 kHz 6 I C = 100 µA I C = 30 µA 2 I C = 10 µA 2,000 5,000 10,000 20,000 50,000 100,000 1,000 R S - SOURCE RESISTANCE (Ω ) Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) 500 400 SC70-6 300 200 100 0 0 25 50 75 100 TEMPERATURE (º C) 125 150 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 3 of 3