BCW30

BCW30 Discrete POWER & Signal Technologies BCW30 C E B SOT-23 Mark: C2 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 32 32 5.0 500 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max *BCW30 350 2.8 357 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. © 1 997 Fairchild Semiconductor Corporation W30, Rev B BCW30 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)CES V(BR)EBO ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 µ A, IE = 0 IC = 2.0 mA, IB = 0 IC = 10 µ A, IE = 0 IE = 10 µ A, IC = 0 VCB = 32 V, IE = 0 VCB = 32 V, IE = 0, TA = +100 °C 32 32 32 5.0 100 10 V V V V nA µA ON CHARACTERISTICS hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA IC = 10 mA, IB = 0.5 mA VCE = 5.0 V, IC = 2.0 mA 0.60 215 500 0.30 0.75 V V SMALL SIGNAL CHARACTERISTICS NF Noise Figure VCE = 5.0 V, IC = 200 µA, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 10 dB