BCW30

BCW30 PNP Silicon Epitaxial Planar Transistor general purpose switching and amplification SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot Tj TS Value 32 32 5 100 200 200 150 - 55 to + 150 Unit V V V mA mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA Base Emitter Voltage at -VCE = 5 V, -IC = 2 mA Transition Frequency at -VCE = 5 V, IE = 10 mA, f = 100 MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz Symbol hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE fT CCBO Min. 215 32 32 5 0.6 100 Typ. 4.5 Max. 500 100 100 0.3 0.75 Unit nA nA V V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 24/08/2007