BDW94A

BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications • Power Darlington TR • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C VCEO Collector-Emitter Voltage : BDW94 : BDW94A : BDW94B : BDW94C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 12 - 15 - 0.2 80 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TSTG ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW94/A/B/C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BDW94 : BDW94A : BDW94B : BDW94C Collector Cut-off Current : BDW94 : BDW94A : BDW94B : BDW94C ICEO Collector Cut-off Current : BDW94 : BDW94A : BDW94B : BDW94C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = - 45V, IB = 0 VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCE = - 100V, IB = 0 VEB = - 5V, IC = 0 VCE = - 3V, IC = -3A VCE = - 3V, IC = - 5A VCE = - 3V, IC = - 10A IC = - 5A, IB = - 20mA IC = - 10A, IB = - 100mA IC = - 5A, IB = - 20mA IC = - 10A, IB = - 100mA IF = - 5A IF = -1 0A - 1.3 - 1.8 1000 750 100 -1 -1 -1 -1 -2 20000 -2 -3 - 2.5 -4 -2 -4 V V V V V V mA mA mA mA mA VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 - 100 - 100 - 100 - 100 µA µA µA µA Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 100 Typ. Max. Units V V V V ICBO VCE(sat) VBE(sat) VF * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Parallel Diode Forward Voltage * Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW94/A/B/C Typical Characteristics 100k -10 10k VCE(sat) [V], SATURATION VOLTAGE VCE = -3V IC= 250 IB hFE, DC CURRENT GAIN -1 1k 100 -0.1 -1 -10 -100 -0.1 -0.1 -1 -10 -100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage -20 1000 VCE= -3V f=1MHz IE=0 IC [A], COLLECTOR CURRENT -16 -12 Cob[pF], CAPACTIANCE 100 -8 -4 -0 -0.0 -0.8 -1.6 -2.4 -3.2 -4.0 10 -1 -10 -100 VBE [V], BASE-EMITTER VOLTAGE VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance -100 120 100 IC [A], COLLECTOR CURRENT IC M AX. -10 5 ms 1 ms 100uS PD [W], POWER DISSIPATION 80 DC 60 -1 40 BDW94 BDW94A BDW94B BDW94C -0.1 -1 -10 -100 -1000 20 0 0 50 o 100 150 200 250 VCE [V], COLLECTOR EMITTER VOLTAGE Tc [ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW94/A/B/C Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E