FDM3622

FDM3622 N-Channel PowerTrench® MOSFET January 2007 FDM3622 N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ Features General Description Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant High Voltage Synchronous Rectifier Formerly developmental type 82744 tm This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Application Distributed Power Architectures and VRMs. Primary Switch for 24V and 48V Systems Bottom Top 5 6 7 8 D 1 D D D D D 5 6 7 8 4G 3S 2S 1S 4 3 2 S S S G D D Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings 100 ±20 4.4 20 2.1 0.9 -55 to +150 Units V V A W °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 3.0 60 °C/W Package Marking and Ordering Information Device Marking FDM3622 Device FDM3622 Package Power 33 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDM3622 Rev.B 1 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 80V, VGS = 0V TJ = 100°C VGS = ±20V, VDS = 0V 100 1 250 ±100 V μA nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Static Drain to Source On Resistance VGS = VDS, ID = 250μA VGS = 10V, ID = 4.4A VGS = 6.0V, ID = 3.8A VGS = 10V, ID = 4.4A , TJ = 150°C 2 44 56 92 4 60 80 120 mΩ V Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 25V, VGS = 0V, f = 1MHz VDS = 15mV, f = 1MHz 820 125 35 3.1 1090 170 55 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 10V VDD = 50V ID = 4.4A VDD = 50V, ID = 4.4A VGS = 10V, RGEN = 24Ω 11 25 35 26 13 3.6 3.4 20 40 56 42 17 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 4.4A VGS = 0V, IS = 2.2A IF = 4.4A, di/dt = 100A/μs 1.25 1.0 56 108 V V ns nC Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB. (b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper. a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper b. 135°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDM3622 Rev.B 2 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 8 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX TA = 25oC VGS = 5V 2.5 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.0 6 1.5 4 VGS = 4.7V VGS = 4.5V 1.0 2 0.5 VGS = 10V, ID = 4.4A 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS , DRAIN TO SOURCE VOLTAGE (V) 0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Junction Temperature 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VDD = 15V 80 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX rDS(ON), DRAIN TO SOURCE ON RESISTANCE (mΩ) 70 ID = 4.4A 60 ID = 0.2A 50 ID , DRAIN CURRENT (A) 8 6 TJ = 150oC 4 TJ = 25oC 2 TJ = -55oC 40 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance vs Gate to Source Voltage 10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 50V 8 C, CAPACITANCE (pF) 1200 1000 Figure 4. Transfer Characteristics CISS = CGS + CGD COSS ≅ CDS + CGD 6 4 100 CRSS = CGD 2 0 0 3 6 WAVEFORMS IN DESCENDING ORDER: ID = 4.4A ID = 1 A 9 12 15 10 0.1 VGS = 0V, f = 1MHz 1 10 100 Qg, GATE CHARGE (nC) VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 5. Gate Charge Characteristics Figure 6. Capacitance vs Drain to Source Voltage FDM3622 Rev.B 3 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 20 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] rDS(on) LIMITED 10 100us 10 STARTING TJ = 25oC 1 1ms 10ms 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 135oC/W TA = 25oC 100ms 1s DC STARTING TJ = 150oC 1 0.001 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 0.01 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) 400 Figure 7. Forward Bias Safe Operating Area 1.2 1.0 ID, DRAIN CURRENT (A) 6 Figure 8. Uncalamped Inductive Switching Capability POWER DISSIPATION MULTIPLIER VGS = 10V 4 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) 2 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC) Figure 9. Normalized Power dissipation vs Ambient Temperature 1.2 VGS = VDS, ID = 250μA NORMALIZED GATE THRESHOLD VOLTAGE Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250μA 1.0 1.1 0.8 1.0 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 0.9 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature FDM3622 Rev.B 4 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 500 VGS = 10V o 100 SINGLE PULSE RθJA = 135 C/W o TA = 25 C FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 – T A ----------------------125 10 1 10 -4 10 -3 10 -2 10 t, PULSE WIDTH (s) -1 10 0 10 1 10 2 10 3 Figure 13. Peak Current Capability 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE RθJA = 135 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 1E-3 -4 10 10 -3 10 -2 10 10 t, RECTANGULAR PULSE DURATION(s) -1 0 10 1 10 2 10 3 Figure 14. Transient Thermal Response Curve FDM3622 Rev.B 5 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET FDM3622 Rev.B 6 www.fairchildsemi.com FDM3622 N-Channel PowerTrench® MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I22 FDM3622 Rev. B 7 www.fairchildsemi.com