FDMC8462 N-Channel Power Trench® MOSFET
March 2008
FDMC8462
N-Channel Power Trench
40V, 20A, 5.8mΩ
Features
Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A Low Profile - 1mm max in Power 33 100% UIL Tested RoHS Compliant
®
tm
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC - DC Conversion
S S
Pin 1 S G D 6 7 8 3 2 1 S S S D 5 4 G
D
D D D D Bottom D
Top
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 40 ±20 20 64 14 50 216 41 2.0 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 °C/W
Package Marking and Ordering Information
Device Marking FDMC8462 Device FDMC8462 Package Power 33
1
Reel Size 13’’
Tape Width 12mm
Quantity 3000 units
©2008 Fairchild Semiconductor Corporation FDMC8462 Rev.C
www.fairchildsemi.com
FDMC8462 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VGS = 0V, VDS = 32V, VGS = ±20V, VDS = 0V 40 31 1 ±100 V mV/°C µA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 11.8A VGS = 10V, ID = 13.5A, TJ = 125°C VDD = 5V, ID = 13.5A 1.0 2.0 -6.6 4.7 6.4 7.1 60 5.8 8.0 9.3 S mΩ 3.0 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 2000 545 80 2.7 2660 725 120 pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VGS = 0V to 4.5V VDD = 20V, ID = 13.5A VDD = 20V, ID = 13.5A, VGS = 10V, RGEN = 6Ω 12 4 27 3 30 15 6 5 21 10 43 10 43 21 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 13.5A VGS = 0V, IS = 1.7A (Note 2) (Note 2) 0.8 0.7 35 20 1.3 1.2 57 32 V ns nC
IF = 13.5A, di/dt = 100A/µs
NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 125°C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25oC; N-ch: L = 3 mH, IAS = 12A, VDD = 40V, VGS = 10V
FDMC8462 Rev.C
2
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FDMC8462 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
50
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 20
VGS = 4.5V VGS = 10V VGS = 4V VGS = 3.5V VGS = 3V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
40
ID, DRAIN CURRENT (A)
VGS = 3.5V VGS = 4.5V VGS = 4V
30 20
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
10
VGS = 3V
0 0.0
0.5
1.0
1.5
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
30
SOURCE ON-RESISTANCE (mΩ)
1.8
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8 0.6 -75
ID = 13.5A VGS = 10V
25 20 15 10 5
ID = 13.5A
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
rDS(on), DRAIN TO
TJ = 125oC
TJ = 25oC
0
-50 -25 0 25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
50
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
50
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
10
VGS = 0V
40
ID, DRAIN CURRENT (A) VDS = 5V
TJ = 150oC
30
TJ = 150oC
1
TJ = 25oC
20
TJ = 25oC
0.1
10
TJ = -55oC
0.01
TJ = -55oC
0 1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMC8462 Rev.C
3
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FDMC8462 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE(V) ID = 13.5A VDD = 16V VDD = 20V CAPACITANCE (pF)
5000
8 6
VDD = 24V
1000
Ciss
Coss
4 2 0 0 5 10 15 20 25 30 35
Qg, GATE CHARGE(nC)
100
f = 1MHz VGS = 0V
Crss
10 0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
75
ID, DRAIN CURRENT (A)
30
IAS, AVALANCHE CURRENT(A)
10
TJ = 25oC
60
VGS = 10V
45 30 15
Limited by Package RθJC = 3 C/W
o
VGS = 4.5V
TJ = 125oC
1 0.01
0.1
1
10
100
400
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE(ms)
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
100
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
2000 1000
VGS = 10V
SINGLE PULSE Rθ JA = 125oC/W TA = 25oC
ID, DRAIN CURRENT (A)
10
1ms
100
1
THIS AREA IS LIMITED BY rDS(on)
10ms 100ms 1s 10s DC
10
0.1
SINGLE PULSE TJ = MAX RATED RθJA = 125oC/W TA = 25oC
0.01 0.01
0.1
1
10
100
1 0.5 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDMC8462 Rev.C
4
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FDMC8462 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
t1 t2
SINGLE PULSE
0.001
0.0002 -4 10
RθJA = 125 C/W
o
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
FDMC8462 Rev.C
5
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FDMC8462 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
FDMC8462 Rev.C
6
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FDMC8462 N-Channel Power Trench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ *
™
®
Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® *
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FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR®
®
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PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ®
The Power Franchise®
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TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™
UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDMC8462 Rev.C
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