FDMC8462

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC8462 N-Channel Power Trench ® tm MOSFET 40V, 20A, 5.8mΩ Features General Description „ Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A „ Low Profile - 1mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant Application „ DC - DC Conversion Pin 1 S S S D 5 4 G D 6 3 S D 7 2 S D 8 1 S G D D D D Bottom Top Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 20 64 (Note 1a) 14 (Note 3) 216 -Pulsed A 50 Single Pulse Avalanche Energy EAS Ratings 40 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 41 (Note 1a) Operating and Storage Junction Temperature Range 2.0 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 3 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC8462 Device FDMC8462 ©2008 Fairchild Semiconductor Corporation FDMC8462 Rev.C Package Power 33 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMC8462 N-Channel Power Trench® MOSFET March 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 40 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 32V, 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.0 V 31 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -6.6 VGS = 10V, ID = 13.5A 4.7 5.8 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 11.8A 6.4 8.0 VGS = 10V, ID = 13.5A, TJ = 125°C 7.1 9.3 VDD = 5V, ID = 13.5A 60 gFS Forward Transconductance 1.0 2.0 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 2000 2660 pF 545 725 pF 80 120 pF Ω 2.7 Switching Characteristics td(on) Turn-On Delay Time 12 21 ns tr Rise Time 4 10 ns td(off) Turn-Off Delay Time 27 43 ns tf Fall Time 3 10 ns Qg Total Gate Charge VGS = 0V to 10V 30 43 nC Qg Total Gate Charge 21 nC Gate to Source Charge VGS = 0V to 4.5V VDD = 20V, ID = 13.5A 15 Qgs Qgd Gate to Drain “Miller” Charge VDD = 20V, ID = 13.5A, VGS = 10V, RGEN = 6Ω 6 nC 5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 13.5A (Note 2) 0.8 1.3 VGS = 0V, IS = 1.7A (Note 2) 0.7 1.2 35 57 ns 20 32 nC IF = 13.5A, di/dt = 100A/µs V NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25oC; N-ch: L = 3 mH, IAS = 12A, VDD = 40V, VGS = 10V FDMC8462 Rev.C 2 www.fairchildsemi.com FDMC8462 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 5.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 VGS = 10V ID, DRAIN CURRENT (A) 40 VGS = 3.5V VGS = 4.5V 30 VGS = 4V 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 10 VGS = 3V 0 0.0 0.5 1.0 VGS = 3V 4.0 3.5 VGS = 3.5V 3.0 2.5 VGS = 4V 2.0 1.5 1.0 1.5 0 10 20 30 40 50 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 30 ID = 13.5A VGS = 10V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 4.5V 0.5 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 13.5A 25 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 15 TJ = 125oC 10 5 TJ = 25oC 0 -50 -25 0 25 50 75 2 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 50 50 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 40 ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 4.5 VDS = 5V 30 TJ = 150oC 20 TJ = 25oC 10 TJ = -55oC 2 3 4 TJ = 150oC 1 TJ = 25oC 0.1 0.01 TJ = -55oC 0.001 0.0 0 1 VGS = 0V 10 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC8462 Rev.C 3 1.2 www.fairchildsemi.com FDMC8462 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 5000 ID = 13.5A VDD = 16V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 20V 6 VDD = 24V 4 Ciss 1000 Coss 100 f = 1MHz VGS = 0V 2 10 0.1 0 0 5 10 15 20 25 30 35 1 Figure 7. Gate Charge Characteristics 75 ID, DRAIN CURRENT (A) 10 TJ = 25oC TJ = 125oC 60 VGS = 10V 45 VGS = 4.5V 30 15 o RθJC = 3 C/W Limited by Package 1 0.01 0.1 1 10 100 0 25 400 50 P(PK), PEAK TRANSIENT POWER (W) 10 1ms 0.1 10ms 100ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125oC/W 10s DC TA = 25oC 0.01 0.01 0.1 1 10 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 THIS AREA IS LIMITED BY rDS(on) 100 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 75 o tAV, TIME IN AVALANCHE(ms) 100 2000 1000 VGS = 10V SINGLE PULSE Rθ JA = 125oC/W TA = 25oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMC8462 Rev.C 40 Figure 8. Capacitance vs Drain to Source Voltage 30 IAS, AVALANCHE CURRENT(A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) ID, DRAIN CURRENT (A) Crss Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC8462 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE 0.001 0.0002 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve FDMC8462 Rev.C 5 www.fairchildsemi.com FDMC8462 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8462 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout FDMC8462 Rev.C 6 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDMC8462 Rev.C www.fairchildsemi.com FDMC8462 N-Channel Power Trench® MOSFET TRADEMARKS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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