FDMC8676_07

FDMC8676 N-Channel PowerTrench® MOSFET December 2007 FDMC8676 N-Channel PowerTrench MOSFET 30V, 18A, 5.9mΩ Features Max rDS(on) = 5.9mΩ at VGS = 10V, ID = 14.7A Max rDS(on) = 9.3mΩ at VGS = 4.5V, ID = 11.5A Low Profile - 1mm max in Power 33 RoHS Compliant ® tm General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device. Applications High efficiency DC-DC converter Notebook DC-DC conversion Multi purpose point of load Top S S S G D D D D D D D 6 7 8 3 2 1 S S S Pin 1 D 5 4 G Bottom Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD EAS TJ, TSTG Power Dissipation Power Dissipation Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 18 66 16 60 41 2.3 216 -55 to +150 W mJ °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 °C/W Package Marking and Ordering Information Device Marking FDMC8676 Device FDMC8676 Package Power 33 Reel Size 13’’ Tape Width 12mm Quantity 3000units ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 1 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V, VGS = 0V TJ = 125°C VGS = ±20V, VDS = 0V 30 32 1 100 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 14.7A VGS = 4.5V, ID = 11.5A VGS =10V, ID = 14.7A, TJ = 125°C VDD = 5V, ID = 14.7A 1.0 1.8 -5 4.7 7.1 6.8 56 5.9 9.3 9.1 S mΩ 3.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1455 760 105 0.8 1935 1010 155 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VGS = 0V to 4.5V VDD = 15V, ID = 14.7A VDD = 15V, ID = 14.7A, VGS = 10V, RGEN = 6Ω 9 3 22 2 21 10 4 3 19 10 36 10 30 14 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 14.7A VGS = 0V, IS = 1.7A (Note 2) (Note 2) 0.8 0.7 33 17 1.3 1.2 53 31 V ns nC IF = 14.7A, di/dt = 100A/µs NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25oC; N-ch: L =3mH, IAS = 12A, VDD = 30V, VGS = 10V ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 2 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 60 50 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 6V 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 ID, DRAIN CURRENT(A) VGS = 6V VGS = 10V VGS = 3.5V VGS = 3.5V PULSE DURATION = 300µs DUTY CYCLE = 2%MAX VGS = 4.5V 40 30 20 10 0 0.0 VGS = 4.5V VGS = 3V PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 25 SOURCE ON-RESISTANCE (mΩ) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = 14.7A VGS = 10V ID = 14.7A PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 20 15 10 5 TJ = 25oC TJ = 125oC rDS(on), DRAIN TO 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 60 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 80 50 ID, DRAIN CURRENT (A) PULSE DURATION = 300µs DUTY CYCLE = 2%MAX VGS = 0V 10 TJ = 150oC TJ = 25oC VDS = 5V 40 TJ = 150oC 1 30 TJ = 25oC 0.1 TJ = -55oC 20 TJ = -55oC 10 0 1.0 0.01 1.5 2.0 2.5 3.0 3.5 4.0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 3 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 14.7A VDD = 10V CAPACITANCE (pF) 60000 Ciss 8 VDD = 15V 1000 Coss 6 VDD = 20V 4 2 0 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 100 Crss f = 1MHz VGS = 0V 10 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 100 20 IAS, AVALANCHE CURRENT(A) ID, DRAIN CURRENT (A) 10 TJ = 25oC 10 1ms 10ms 1 TJ = 125oC THIS AREA IS LIMITED BY rDS(on) 100ms 1s 10s DC 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 125 C/W TA = 25oC o 1 0.01 0.1 1 10 100 400 0.01 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area 2000 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = 10V SINGLE PULSE 100 RθJA = 125 C/W TA = 25 C o o 10 1 0.5 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 4 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE RθJA = 125 C/W o t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 0.0005 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 5 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 6 www.fairchildsemi.com FDMC8676 N-Channel PowerTrench® MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 7 www.fairchildsemi.com