FDMC7200

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC7200 Dual N-Channel PowerTrench® MOSFET 30 V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS(on) = 23.5 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and „ Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5 A routing of synchronous buck converters. The control Q2: N-Channel MOSFET (Q1) and synchronous MOSFET (Q2) have been „ Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 8 A designed to provide optimal power efficiency. „ Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7 A Applications „ RoHS Compliant „ Mobile Computing „ Mobile Internet Devices „ General Purpose Point of Load Pin 1 G1 D1 D1 D1 G HS D1 V IN V IN V IN H ITC SW D2/S1 G2 V IN S2 S2 DE NO S2 G LS D GN ND DG GN Q2 4 D1 S2 5 S2 6 3 D1 S2 7 2 D1 G2 8 Q1 1 G1 BOTTOM BOTTOM Power 33 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 3) Drain Current - Continuous (Package limited) TC = 25 °C Units V ±20 ±20 V 8 8 TC = 25 °C 20 40 - Continuous TA = 25 °C 6 1a 8 1b 40 40 Power Dissipation TA = 25 °C 1.9 1a 2.2 1b Power Dissipation TA = 25 °C 0.7 1c 0.9 1d - Pulsed TJ, TSTG Q2 30 - Continuous (Silicon limited) ID PD Q1 30 Operating and Storage Junction Temperature Range A -55 to +150 W °C Thermal Characteristics RθJA 65 1a Thermal Resistance, Junction to Ambient RθJA Thermal Resistance, Junction to Ambient RθJC Thermal Resistance, Junction to Case 180 1c 7.5 55 1b 145 1d °C/W 4 Package Marking and Ordering Information Device Marking FDMC7200 Device FDMC7200 ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 Package Power 33 1 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7200 Dual N-Channel PowerTrench® MOSFET June 2009 Symbol Parameter Test Conditions Type Min 30 30 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ID = 250 µA, VGS = 0 V Q1 Q2 ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C ID = 250 µA, referenced to 25 °C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V Q1 Q2 1 1 µA IGSS Gate to Source Leakage Current VDS = 20 V, VGS = 0 V Q1 Q2 100 100 nA nA 3.0 3.0 V V 14 14 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA VGS = VDS, ID = 250 µA Q1 Q2 ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C ID = 250 µA, referenced to 25 °C Q1 Q2 -5 -6 VGS = 10 V, ID = 6 A VGS = 4.5 V, ID = 5 A VGS = 10 V, ID = 6 A, TJ = 125 °C Q1 19 28 29 23.5 38 35.5 VGS = 10 V, ID = 8 A VGS = 4.5 V, ID = 7 A VGS = 10 V, ID = 8 A, TJ = 125 °C Q2 10 13 15 12 18 18 VDD = 5 V, ID = 6 A VDD = 5 V, ID = 8 A Q1 Q2 29 56 Q1 Q2 495 1180 660 1570 pF Q1 Q2 145 330 195 440 pF 30 45 pF rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.0 1.0 2.3 2.3 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Q1 Q2 20 30 Rg Gate Resistance Q1 Q2 1.4 1.4 Q1 Q2 11 13 20 23 ns Q1 Q2 3.1 4 10 10 ns Q1 Q2 35 38 56 60 ns Q1 Q2 1.3 6 10 12 ns Q1 Q2 7.3 16 10 22 nC Q1 Q2 3.1 7 4.3 10 nC Q1 Q2 1.8 4.1 nC Q1 Q2 1 1.5 nC VDS = 15 V, VGS = 0 V, f = 1 MHZ Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 Q1 VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω Q2 VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V Q1: VDD = 15 V, VGS = 0 V to 4.5 V ID = 6 A, Q2: VDD = 15 V, ID = 8 A, 2 www.fairchildsemi.com FDMC7200 Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.8 0.8 1.2 1.2 V Q1 Q2 13 21 24 34 ns Q1 Q2 2.3 5.6 10 12 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 6 A VGS = 0 V, IS = 8 A trr Reverse Recovery Time Qrr Reverse Recovery Charge Q1 IF = 6 A, di/dt = 100 A/s Q2 IF = 8 A, di/dt = 100 A/s (Note 2) (Note 2) Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a.65 °C/W when mounted on a 1 in2 pad of 2 oz copper b.55 °C/W when mounted on a 1 in2 pad of 2 oz copper c. 180 °C/W when mounted on a minimum pad of 2 oz copper d. 145 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 3 www.fairchildsemi.com FDMC7200 Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 40 4 ID, DRAIN CURRENT (A) VGS = 6 V 30 VGS = 4.5 V 20 VGS = 4 V 10 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 3 VGS = 3.5 V VGS = 4 V 2 VGS = 4.5 V 1 0 3.0 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 40 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 100 ID = 6 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 80 ID = 6 A 60 TJ = 125 oC 40 20 TJ = 25 oC 0 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 40 40 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V 30 VDS = 5 V 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 2.0 2.5 3.0 3.5 4.0 1 TJ = 150 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.2 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDMC7200 Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 10 1000 VGS, GATE TO SOURCE VOLTAGE (V) ID = 6 A Ciss CAPACITANCE (pF) 8 VDD = 20 V VDD = 15 V 6 VDD = 10 V 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 2 4 6 10 0.1 8 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 100 25 o 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) RθJC = 7.5 C/W 100 us 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms 1s 10 s DC SINGLE PULSE TJ = MAX RATED 0.01 RθJA = 180 oC/W VGS = 10 V 20 15 VGS = 4.5 V 10 5 Limited by Package o TC = 25 C 0.001 0.01 0.1 1 10 0 25 100200 50 75 100 125 150 o Tc, CASE TEMPERATURE ( C) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE o RθJA = 180 C/W 100 o TA = 25 C 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 5 www.fairchildsemi.com FDMC7200 Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.01 o RθJA = 180 C/W 0.003 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 6 www.fairchildsemi.com FDMC7200 Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 6 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V 30 VGS = 4.5 V VGS = 4 V 20 VGS = 3.5 V 10 0 0.0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 3 V 0.5 1.0 1.5 2.0 2.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 5 VGS = 3 V 4 VGS = 3.5 V 3 VGS = 4 V 2 1 VGS = 10 V 0 3.0 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 40 Figure 14. Normalized on-Resistance vs Drain Current and Gate Voltage 1.6 60 ID = 8 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) Figure 13. On-Region Characteristics PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 50 ID = 8 A 40 30 TJ = 125 oC 20 10 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. On-Resistance vs Gate to Source Voltage Figure 15. Normalized On-Resistance vs Junction Temperature 40 IS, REVERSE DRAIN CURRENT (A) 40 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 4.5 V 30 VDS = 5 V 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 1.5 2.0 2.5 3.0 3.5 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 18. Source to Drain Diode Forward Voltage vs Source Current Figure 17. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 VGS = 0 V 10 7 www.fairchildsemi.com FDMC7200 Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted 2000 Ciss ID = 8 A 1000 8 VDD = 15 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V VDD = 20 V 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 3 6 9 12 15 10 0.1 18 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 19. Gate Charge Characteristics Figure 20. Capacitance vs Drain to Source Voltage 100 50 o ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) RθJC = 4 C/W 100 us 10 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s RθJA = 145 oC/W 10 s DC o TC = 25 C 0.01 0.01 0.1 1 10 40 VGS = 10 V 30 VGS = 4.5 V 20 10 0 25 100200 Limited by Package 50 75 100 125 150 o Tc, CASE TEMPERATURE ( C) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 21. Forward Bias Safe Operating Area Figure 22. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE o RθJA = 145 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 22. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 8 www.fairchildsemi.com FDMC7200 Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 145 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 23. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 9 www.fairchildsemi.com FDMC7200 Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted FDMC7200 Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 10 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2009 Fairchild Semiconductor Corporation FDMC7200 Rev.D1 11 www.fairchildsemi.com FDMC7200 Dual N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM™ PowerTrench® F-PFS™ The Power Franchise® PowerXS™ Build it Now™ FRFET® ® Global Power ResourceSM Programmable Active Droop™ CorePLUS™ Green FPS™ QFET® CorePOWER™ TinyBoost™ QS™ Green FPS™ e-Series™ CROSSVOLT™ TinyBuck™ Quiet Series™ Gmax™ CTL™ TinyLogic® RapidConfigure™ GTO™ Current Transfer Logic™ TINYOPTO™ IntelliMAX™ EcoSPARK® TinyPower™ EfficentMax™ ISOPLANAR™ ™ TinyPWM™ EZSWITCH™ * Saving our world, 1mW /W /kW at a time™ MegaBuck™ TinyWire™ ™* SmartMax™ MICROCOUPLER™ TriFault Detect™ SMART START™ MicroFET™ TRUECURRENT™* SPM® MicroPak™ ® µSerDes™ STEALTH™ MillerDrive™ ® Fairchild SuperFET™ MotionMax™ ® Fairchild Semiconductor SuperSOT™-3 Motion-SPM™ FACT Quiet Series™ SuperSOT™-6 UHC® OPTOLOGIC® ® FACT OPTOPLANAR® Ultra FRFET™ SuperSOT™-8 ® ® FAST UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ PDP SPM™ ® FlashWriter * XS™ ®* Power-SPM™ FPS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com