FDMS8670S

FDMS8670S N-Channel PowerTrench® SyncFETTM December 2006 FDMS8670S N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.5mΩ Features General Description Max rDS(on) = 3.5mΩ at VGS = 10V, ID = 20A Max rDS(on) = 5.0mΩ at VGS = 4.5V, ID = 17A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant tm The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Application Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S D S G 5 6 7 8 4 3 2 1 G G G S D D D D D D Power 56 (Bottom view) D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C Ratings 30 ±20 42 116 20 200 78 2.5 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 °C/W Package Marking and Ordering Information Device Marking FDMS8670S Device FDMS8670S Package Power 56 Reel Size 7’’ Tape Width 12mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMS8670S Rev.C1 1 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 50mA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V 30 17 500 ±100 V mV/°C μA nA On Characteristics VGS(th) ΔVGS(th) ΔTJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 50mA, referenced to 25°C VGS = 10V, ID = 20A VGS = 4.5V, ID = 17A VGS = 10V, ID = 20A ,TJ = 125°C VDS = 10V, ID = 20A 1 1.5 -2.8 2.8 3.6 3.9 98 3.5 5.0 6.0 S mΩ 3 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V f = 1MHz f = 1MHz 3005 865 320 1.4 4000 1150 480 5.0 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(4.5V) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 4.5V Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VGS = 0V to 4.5V VDS = 15V ID = 20A VDD = 15V, ID = 20A VGS = 10V, RGEN = 5Ω 14 19 37 10 52 24 8 10 26 35 60 20 73 34 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2A IF = 20A, di/dt = 300A/μs 0.4 26 24 0.7 42 39 V ns nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse time < 300μs, Duty cycle < 2%. FDMS8670S Rev.C1 2 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = 3.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 180 ID, DRAIN CURRENT (A) 4.0 3.5 VGS = 3V PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 150 120 90 60 VGS = 10V VGS = 4.5V VGS = 4V 3.0 2.5 2.0 VGS = 4.5V VGS = 3.5V VGS = 4V VGS = 3V 1.5 1.0 VGS = 10V 30 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.5 0 30 60 90 120 150 180 ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 10 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 20A VGS = 10V ID = 20A PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 8 6 TJ = 125oC 4 TJ = 25oC 2 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 150 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 20 10 IS, REVERSE DRAIN CURRENT (A) VGS = 0V ID, DRAIN CURRENT (A) 120 90 60 TJ = 125oC TJ = 25oC 1 TJ = 125oC TJ = 25oC 0.1 TJ = -55oC 30 TJ = -55oC 0.01 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.7 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS8670S Rev.C1 3 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 VDD = 10V 5000 Ciss 6 VDD = 15V VDD = 20V CAPACITANCE (pF) 1000 Coss 4 2 0 0 10 20 30 40 Qg, GATE CHARGE(nC) 50 60 f = 1MHz VGS = 0V Crss 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 120 40 IAS, AVALANCHE CURRENT(A) ID, DRAIN CURRENT (A) 100 VGS = 10V 10 TJ = 25oC 80 60 VGS = 4.5V TJ = 125oC 40 20 RθJC = 1.6 C/W o Limited by Package 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 1000 0 25 50 75 100 o 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 300 Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 FOR TEMPERATURES 100 ID, DRAIN CURRENT (A) 100us P(PK), PEAK TRANSIENT POWER (W) 10 1 0.1 0.01 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25OC 1ms 10ms 100ms 1s 10s DC 100 VGS = 10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 – T A ----------------------125 TA = 25oC 10 SINGLE PULSE 1E-3 0.1 1 10 80 1 0.6 -3 10 10 -2 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -1 0 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMS8670S Rev.C1 4 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 1E-3 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS8670S Rev.C1 5 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS8670S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) IDSS, REVERSE LEAKAGE CURRENT (A) IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 0.1 0.1 TA = 125oC 25oC TJ = 1 TJ = 125oC 0.01 0.01 0.01 CURRENT: 0.8A/Div 1E-3 1E-3 1E-3 TJ o 1 TA = J 00=C 00 C T 1 = 100oC o 1E-4 1E-4 1E-4 1E-5 1E-5 1E-50 0 TJ = = 5o5oC T 2 2C J TA = 25oC 5 5 5 TIME: 12.5nS/Div VDS, REVERSEVOLTAGE (V) VDS, REVERSE VOLTAGE (V) VDS, REVERSE VOLTAGE (V) 10 10 10 15 15 15 20 20 20 25 25 30 30 25 30 Figure 14. FDMS8670S SyncFET Body Diode reverse recovery characteristics Figure 15. SyncFET Body Diode reverse leakage vs drain to source voltage FDMS8670S Rev.C1 6 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM FDMS8670S Rev.C1 7 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I22 FDMS8670S Rev. C1 8 www.fairchildsemi.com