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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FDMS8670S
N-Channel PowerTrench® SyncFETTM
30V, 42A, 3.5m:
Features
tm
General Description
The FDMS8670S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Max rDS(on) = 3.5m: at VGS = 10V, ID = 20A
Max rDS(on) = 5.0m: at VGS = 4.5V, ID = 17A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
Application
RoHS Compliant
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Bottom
Top
Pin 1
S
D
D
D
S
S
G
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TJ, TSTG
Units
V
±20
V
TC = 25°C
42
-Continuous (Silicon limited)
TC = 25°C
116
-Continuous (Silicon limited)
TC = 100°C
74
-Continuous
TA = 25°C
20
-Pulsed
PD
Ratings
30
A
200
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
(Note 1a)
2.5
78
Power Dissipation
TA = 85°C
(Note 1a)
1.3
Operating and Storage Junction Temperature Range
-55 to +150
W
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
1.6
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8670S
Device
FDMS8670S
©2009 Fairchild Semiconductor Corporation
FDMS8670S Rev.C6
Package
Power 56
1
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench® SyncFETTM
October 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1mA, VGS = 0V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 10mA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
500
PA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
3
V
17
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1mA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 50mA, referenced to 25°C
rDS(on)
Drain to Source On Resistance
gFS
Forward Transconductance
1
1.5
-2.8
mV/°C
VGS = 10V, ID = 20A
2.8
3.5
VGS = 4.5V, ID = 17A
3.6
5.0
VGS = 10V, ID = 20A ,TJ = 125°C
3.9
6.0
VDS = 10V, ID = 20A
98
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15V, VGS = 0V
f = 1MHz
f = 1MHz
3005
4000
pF
865
1150
pF
320
480
pF
1.4
5.0
:
14
26
ns
19
35
ns
37
60
ns
10
20
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
52
73
nC
VGS = 0V to 4.5V VDS = 15V
ID = 20A
24
34
nC
VDD = 15V, ID = 20A
VGS = 10V, RGEN = 5:
Qg(4.5V)
Total Gate Charge at 4.5V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
8
nC
10
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2A
IF = 20A, di/dt = 300A/Ps
0.4
0.7
V
26
42
ns
24
39
nC
Notes:
1: RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper
2: Pulse time < 300Ps, Duty cycle < 2%.
FDMS8670S Rev.C6
2
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25°C unless otherwise noted
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = 10V
150
VGS = 3.5V
VGS = 4.5V
120
VGS = 4V
90
60
VGS = 3V
30
0
0
1
2
3
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
180
4
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
3.5
VGS = 3V
3.0
VGS = 3.5V
2.5
VGS = 4V
2.0
VGS = 4.5V
1.5
1.0
VGS = 10V
0.5
0
30
60
150
180
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
10
1.8
ID = 20A
VGS = 10V
1.6
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
120
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.4
1.2
1.0
0.8
0.6
-75
-50
IS, REVERSE DRAIN CURRENT (A)
120
90
60
TJ = 25oC
30
TJ = -55oC
0
2
3
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics
FDMS8670S Rev.C6
6
TJ = 125oC
4
TJ = 25oC
2
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ = 125oC
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
8
3
150
1
ID = 20A
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
90
20
10
VGS = 0V
1
TJ = 125oC
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
0.1
0.2
0.3
0.4
0.5
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.7
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
10
5000
8
CAPACITANCE (pF)
Ciss
VDD = 10V
6
VDD = 15V
VDD = 20V
4
2
0
0
10
20
30
40
Qg, GATE CHARGE(nC)
50
1000
Coss
100
0.1
60
Figure 7. Gate Charge Characteristics
30
120
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
40
10
TJ = 25oC
TJ = 125oC
100
VGS = 10V
80
60
VGS = 4.5V
40
Limited by Package
20
o
RTJC = 1.6 C/W
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE(ms)
0
1000
25
P(PK), PEAK TRANSIENT POWER (W)
1ms
10ms
1
0.1
100ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1s
10s
SINGLE PULSE
TJ = MAX RATED
TA = 25OC
0.01
1E-3
0.1
1
10
DC
80
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
FDMS8670S Rev.C6
100
125
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100us
10
75
o
300
100
50
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
ID, DRAIN CURRENT (A)
Crss
f = 1MHz
VGS = 0V
500
FOR TEMPERATURES
VGS = 10V
100
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 – T
A
----------------------125
I = I25
TA = 25oC
10
SINGLE PULSE
1
0.6
-3
10
-2
10
-1
0
1
10
10
10
t, PULSE WIDTH (s)
2
10
3
10
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZTJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
SINGLE PULSE
1E-3
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDMS8670S Rev.C6
5
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted
SyncFET Schottky body diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
IDSS
, REVERSE
IDSS
, REVERSELEAKAGE
LEAKAGECURRENT
CURRENT(A)
(A)
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS8670S.
0.1
0.1
0.1
o
TA = 125
T =C125oC
TJ =J 125oC
CURRENT: 0.8A/Div
0.01
0.01
0.01
o
o
oC
T=J =
100
TA =TJ100
100
CC
1E-3
1E-3
1E-3
1E-4
1E-4
1E-4
o
TJT= =2525
CoC
J
TA = 25oC
1E-5
1E-5
1E-50
0
55
5
1010
10
1515
15
20 20
20
25 25 30 30
25
30
TIME: 12.5nS/Div
VDS,
REVERSE VOLTAGE
VDS, REVERSE
VOLTAGE(V)
(V)
VDS, REVERSE VOLTAGE (V)
Figure 14. FDMS8670S SyncFET Body
Diode reverse recovery characteristics
Figure 15. SyncFET Body Diode reverse
leakage vs drain to source voltage
FDMS8670S Rev.C6
6
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench® SyncFETTM
Typical Characteristics (continued)
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
PKG
CL
8
5.10
3.91
A
SEE
DETAIL B
B
5
1.27
8
7
6
5
0.77
4.52
PKG CL
5.85
5.65
6.15
3.75
6.61
KEEP OUT
AREA
1.27
1
4
1
TOP VIEW
2
3
4
0.61
1.27
3.81
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
OF THE PACKAGE
SEE
DETAIL C
5.00
4.80
LAND PATTERN
RECOMMENDATION
0.35
0.15
0.10 C
0.05
0.00
SIDE VIEW
8X
0.08 C
5.20
4.80
1.10
0.90
3.81
0.35
0.15
DETAIL C
SCALE: 2:1
1.27
0.51 (8X)
0.31
(0.34)
0.10
1
2
3
C A B
4
0.76
0.51
(0.52)
6.25
5.90
3.48+0.30
-0.10
(0.50)
(0.30)
(2X)
8
0.20+0.10
-0.15 (8X)
7
6
3.96
3.61
BOTTOM VIEW
0.30
0.05
5
C
SEATING
PLANE
DETAIL B
SCALE: 2:1
NOTES: UNLESS OTHERWISE SPECIFIED
A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,
ISSUE A, VAR. AA,.
B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.
E. IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUT AREA.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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