FGPF45N45T

FGPF45N45T 450V, 45A PDP Trench IGBT December 2007 FGPF45N45T 450V, 45A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.6V @ IC = 45A • High input impedance • Fast switching • RoHS complaint tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications • PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol VCES VGES ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = @ TC = 2 5o C 2 5o C Ratings 450 ±30 180 51.6 20.6 -55 to +150 -55 to +150 300 Units V V A W W oC oC o @ TC = 100oC C Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 2.42 62.5 Units o C /W o C /W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF45N45T Rev. A FGPF45N45T 450V, 45A PDP Trench IGBT Package Marking and Ordering Information Device Marking FGPF45N45T Device FGFP45N45TTU Package TO-220F Packaging Type Rail / Tube Max Qty Qty per Tube 50ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 450 - 0.5 - 100 ±400 V V/oC µA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 20A, VGE = 15V IC = 45A, VGE = 15V IC = 45A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2140 130 102 pF pF pF 3.0 4.3 1.21 1.60 1.57 5.5 1.5 V V V V Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 45A, VGE = 15V VCC = 200V, IC = 45A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 45A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC 26 100 170 220 22 90 132 280 100 15 46 330 ns ns ns ns ns ns ns ns nC nC nC FGPF45N45T Rev. A 2 www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 150 Collector Current, IC [A] TC = 25 C o Figure 2. Typical Output Characteristics 180 TC = 125 C o 20V 15V 12V 20V 12V 10V 15V 10V 150 Collector Current, IC [A] 120 90 60 30 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 VGE = 8V 120 90 60 30 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 VGE = 8V Figure 3. Typical Saturation Voltage Characteristics 180 150 Collector Current, IC [A] Common Emitter VGE = 15V TC = 25 C Figure 4. Transfer Characteristics 180 150 Collector Current, IC [A] Common Emitter VCE = 20V TC = 25 C TC = 125 C o o o 120 90 60 30 0 0 TC = 125 C o 120 90 60 30 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1.8 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 C o 1.6 45A 16 12 1.4 30A 8 1.2 IC = 20A 4 30A IC = 20A 45A 1.0 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGPF45N45T Rev. A 3 www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Figure 8. Capacitance Characteristics 10000 Cies Coes Collector-Emitter Voltage, VCE [V] 16 Capacitance [pF] 1000 Cres 12 8 100 Common Emitter VGE = 0V, f = 1MHz TC = 25 C o 4 30A IC = 20A 45A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 10 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Common Emitter TC = 25 C o Figure 10. SOA Characteristics 500 100 IC MAX (Pulse) 100µs 10µs Gate-Emitter Voltage, VGE [V] 12 VCC = 100V 200V Collector Current, Ic [A] 9 10 IC MAX (Continuous) 1ms 10 ms 6 1 3 0.1 0 0 30 60 90 Gate Charge, Qg [nC] 120 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature DC Operation 0.01 0.1 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 11. Turn-on Characteristics vs. Gate Resistance 500 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 100 tr Switching Time [ns] Switching Time [ns] tf 100 td(off) td(on) 10 Common Emitter VCC = 200V, VGE = 15V IC = 45A TC = 25 C TC = 125 C o o Common Emitter VCC = 200V, VGE = 15V IC = 45A TC = 25 C o o 1 0 10 20 30 40 50 Gate Resistance, RG [Ω] 10 0 10 TC = 125 C 20 30 Gate Resistance, RG [Ω] 40 50 FGPF45N45T Rev. A 4 www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 200 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Figure 14. Turn-off Characteristics vs. Collector Current 1000 100 Switching Time [ns] Switching Time [ns] TC = 125 C tr tf 100 td(off) Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C o o td(on) 10 10 20 30 40 45 10 10 20 30 40 45 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 1000 Figure 16. Switching Loss vs.Gate Resistance 1000 Eoff Eoff Switching Loss [µJ] Switching Loss [µJ] 100 Eon Eon 100 Common Emitter VCC = 200V, VGE = 15V IC = 45A TC = 25 C TC = 125 C o o 10 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C o o 10 0 10 20 30 40 50 1 10 20 30 40 45 Gate Resistance, RG [Ω] Collector Current, IC [A] Figure 17. Transient Thermal Impedance of IGBT 10 Thermal Response [Zthjc] 0.5 1 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.1 0.01 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 Rectangular Pulse Duration [sec] FGPF45N45T Rev. A 5 www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FGPF45N45T Rev. A 6 15.87 ±0.20 www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGPF45N45T Rev. A 7 www.fairchildsemi.com