FGPF30N45T

FGPF30N45T 450V, 30A PDP Trench IGBT December 2007 FGPF30N45T 450V, 30A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.55V @ IC = 30A • High input impedance • Fast switching • RoHS complaint tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications • PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol VCES VGES ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = @ TC = 2 5o C 2 5o C Ratings 450 ±30 120 50.4 20.1 -55 to +150 -55 to +150 300 Units V V A W W oC oC o @ TC = 100oC C Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 2.48 62.5 Units o C /W o C /W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF30N45T Rev. A FGPF30N45T 450V, 30A PDP Trench IGBT Package Marking and Ordering Information Device Marking FGPF30N45T Device FGFP30N45TTU Package TO-220F Packaging Type Rail / Tube Max Qty Qty per Tube 50ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 450 - 0.5 - 100 ±400 V V/oC µA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 20A, VGE = 15V IC = 30A, VGE = 15V IC = 30A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 1610 88 68 pF pF pF 3.0 4.5 1.35 1.55 1.53 5.5 1.6 V V V Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 30A, VGE = 15V VCC = 200V, IC = 30A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 30A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 25oC 19 57 119 220 20 60 122 265 73 11 33 330 ns ns ns ns ns ns ns ns nC nC nC FGPF30N45T Rev. A 2 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 120 TC = 25 C o Figure 2. Typical Output Characteristics 120 TC = 125 C o 20V 15V 20V 15V 12V 10V Collector Current, IC [A] 12V 10V 80 Collector Current, IC [A] 80 VGE = 8V 40 VGE = 8V 40 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 120 Common Emitter VCE = 20V Collector Current, IC [A] TC = 25 C Collector Current, IC [A] o TC = 25 C TC = 125 C o o 80 TC = 125 C o 80 40 40 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 0 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1.8 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 C o 1.6 30A 16 12 1.4 20A 8 1.2 IC = 10A 4 20A IC = 10A 30A 1.0 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGPF30N45T Rev. A 3 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Figure 8. Capacitance Characteristics 10000 Cies Collector-Emitter Voltage, VCE [V] 16 Capacitance [pF] Coes 1000 Cres 12 8 20A 30A IC = 10A 100 Common Emitter VGE = 0V, f = 1MHz TC = 25 C o 4 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 10 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Common Emitter TC = 25 C o Figure 10. SOA Characteristics 500 IC MAX (Pulse) 10µs Gate-Emitter Voltage, VGE [V] 12 VCC = 100V 100 Collector Current, Ic [A] 200V 100µs 9 10 1ms 10 ms 6 1 IC MAX (Continuous) Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 3 0.1 DC Operation 0 0 20 40 60 Gate Charge, Qg [nC] 80 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 11. Turn-on Characteristics vs. Gate Resistance 500 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 tf 100 Switching Time [ns] Switching Time [ns] td(off) tr 100 Common Emitter VCC = 200V, VGE = 15V IC = 30A TC = 25 C o o 10 td(on) Common Emitter VCC = 200V, VGE = 15V IC = 30A TC = 25 C TC = 125 C o o 1 0 10 20 30 40 50 Gate Resistance, RG [Ω] 10 0 10 20 TC = 125 C 30 40 50 Gate Resistance, RG [Ω] FGPF30N45T Rev. A 4 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 200 Common Emitter VGE = 15V, RG = 15Ω TC = 25 C o o Figure 14. Turn-off Characteristics vs. Collector Current 500 100 Switching Time [ns] Switching Time [ns] TC = 125 C tf 100 td(off) tr Common Emitter VGE = 15V, RG = 15Ω TC = 25 C TC = 125 C o o td(on) 10 5 10 15 20 25 30 Collector Current, IC [A] 10 5 10 15 20 25 30 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 1000 Figure 16. Switching Loss vs.Gate Resistance 1000 Switching Loss [µJ] Eoff Switching Loss [µJ] Eoff 100 Eon 100 Eon Common Emitter VCC = 200V, VGE = 15V IC = 30A TC = 25 C TC = 125 C o o 10 Common Emitter VGE = 15V, RG = 15Ω TC = 25 C TC = 125 C o o 10 1 0 10 20 30 40 50 5 10 20 Collector Current, IC [A] 30 Gate Resistance, RG [Ω] Figure 17. Transient Thermal Impedance of IGBT 10 Thermal Response [Zthjc] 0.5 1 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.1 0.01 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] FGPF30N45T Rev. A 5 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FGPF30N45T Rev. A 6 15.87 ±0.20 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGPF30N45T Rev. A 7 www.fairchildsemi.com