FGPF50N30T

FGPF50N30T 300V, 50A PDP IGBT January 2008 FGPF50N30T 300V, 50A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC = 30A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications • PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol VCES VGES ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25 C @ TC = 100oC o Ratings 300 ± 30 120 46.8 18.7 -55 to +150 -55 to +150 300 Units V V A W W o o o C C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 2.67 62.5 Units o o C /W C /W Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * IC_pluse limited by max Tj ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF50N30T Rev. A FGPF50N30T 300V, 50A PDP IGBT Package Marking and Ordering Information Device Marking FGPF50N30T Device FGPF50N30TTU Package TO-220F Packaging Type Rail / Tube Max Qty Qty per Tube 50ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 300 - 0.3 - 250 ±400 V V/oC µA nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE IC = 15A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 30A, VGE = 15V IC = 50A, VGE = 15V, TC = 25oC IC = 50A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2320 92 80 pF pF pF 3.0 4.5 1.1 1.4 1.65 1.60 5.5 1.5 V V V V V Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 30A, VGE = 15V VCC = 200V, IC = 30A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 30A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 25oC 31 78 156 200 30 78 163 260 97 15 41 300 ns ns ns ns ns ns ns ns nC nC nC FGPF50N30T Rev. A 2 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 120 TC = 25 C o Figure 2. Typical Output Characteristics 120 TC = 125 C o 20V 15V 20V 15V 12V 10V Collector Current, IC [A] 10V Collector Current, IC [A] 12V 80 80 40 VGE = 8V 40 VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 3. Typical Saturation Voltage Characteristics 120 100 Collector Current, IC [A] Common Emitter VGE = 15V TC = 25 C Figure 4. Transfer Characteristics 120 Common Emitter VCE = 20V Collector Current, IC [A] o TC = 25 C TC = 125 C o o 80 60 40 20 0 0 TC = 125 C o 80 40 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 2 4 6 8 10 12 Gate-Emitter Voltage,VGE [V] 14 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 C o 1.8 50A 16 1.6 1.4 1.2 IC = 15A 12 30A 8 50A 1.0 0.8 25 4 30A IC = 15A 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGPF50N30T Rev. A 3 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter Figure 8. Capacitance Characteristics 10000 Common Emitter VGE = 0V, f = 1MHz Cies TC = 25 C o Collector-Emitter Voltage, VCE [V] TC = 125 C o 16 Capacitance [pF] 12 1000 Coes 8 30A Cres 4 IC = 15A 50A 100 20 50 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Common Emitter TC = 25 C o Figure 10. SOA Characteristics 500 100 Collector Current, Ic [A] 10µs 100µs Gate-Emitter Voltage, VGE [V] 12 VCC = 100V 9 200V 10 1ms 10 ms 6 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 3 0.1 0 0 25 50 75 Gate Charge, Qg [nC] 100 0.01 0.1 1 10 100 Collector-Emitter Voltage, VCE [V] 500 Figure 11. Turn-on Characteristics vs. Gate Resistance 400 Figure 12. Turn-off Characteristics vs. Gate Resistance 5500 Common Emitter VCC = 200V, VGE = 15V IC = 30A Switching Time [ns] Switching Time [ns] tr 1000 TC = 25 C TC = 125 C o o td(off) 100 tf td(on) Common Emitter VCC = 200V, VGE = 15V IC = 30A TC = 25 C TC = 125 C o o 100 10 0 20 40 60 80 Gate Resistance, RG [Ω] 100 10 0 20 40 60 80 100 Gate Resistance, RG [Ω] FGPF50N30T Rev. A 4 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 15Ω TC = 25 C o o Figure 14. Turn-off Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 15Ω TC = 25 C o o Switching Time [ns] Switching Time [ns] TC = 125 C tr TC = 125 C tf 100 td(on) td(off) 10 10 20 30 40 50 100 10 20 30 40 50 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 2000 Common Emitter VCC = 200V, VGE = 15V Figure 16. Switching Loss vs.Gate Resistance 3000 Common Emitter VGE = 15V, RG = 15Ω TC = 25 C TC = 125 C o o 1000 Switching Loss [µJ] IC = 30A o TC = 125 C Eoff Switching Loss [µJ] TC = 25 C o 1000 Eoff Eon Eon 100 100 0 20 40 60 80 Gate Resistance, RG [Ω] 100 30 10 20 30 40 50 Collector Current, IC [A] Figure 17.Transient Thermal Impedance of IGBT 10 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] FGPF50N30T Rev. A 5 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FGPF50N30T Rev. A 6 15.87 ±0.20 www.fairchildsemi.com FGPF50N30T 300V, 50A PDP IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGPF50N30T Rev. A 7 www.fairchildsemi.com