FGPF30N30DTU

FGPF30N30D 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30D offers the optimum solution for PDP applications where lowcondution loss is essential. • Low saturation voltage: VCE(sat) =1.4V @ IC = 20A • High Input Impedance • Fast switching • RoHS Complaint Application . PDP System C G TO-220F 1 1.Gate 2.Collector E 3.Emitter Absolute Maximum Ratings Symbol Description VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC pulse(1) Pulsed Collector Current @ TC = 25oC IF Diode Continuous Forward Current @ TC = 100°C IFM Diode Maximum Forward Current PD Maximum Power Dissipation Maximum Power Dissipation FGPF30N30D Units 300 V ± 30 V 80 A 10 A 40 A @ TC = 25oC 46 W @ TC = 100oC 18.5 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC C Thermal Characteristics Symbol Parameter Typ. Max. Units oC/W RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 2.7 RθJC(DIODE) Thermal Resistance, Junction-to-Case for Diode -- 3.0 °C/W 62.5 oC/W RθJA Thermal Resistance, Junction-to-Ambient -- Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj ©2006 Fairchild Semiconductor Corporation FGPF30N30D Rev. A 1 www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT April 2007 Device Marking Device Package Packaging Type FGPF30N30D FGFP30N30DTU TO-220F Rail / Tube Electrical Characteristics T C Symbol Max Qty Qty per Tube per Box 50ea - = 25oC unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 300 -- -- V ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250uA -- 0.6 -- V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 100 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA 2.5 4.0 5.0 V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC =10A, VGE = 15V -- 1.2 1.5 V IC =20A, VGE = 15V -- 1.4 -- V IC = 30A, VGE = 15V TC = 25oC -- 1.8 -- V IC = 30A, VGE = 15V TC = 125oC -- 1.9 -- V -- 685 -- pF VCE = 30V, VGE = 0V f = 1MHz -- 95 -- pF -- 30 -- pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 200 V, IC = 20A RG = 20Ω, VGE = 15V Resistive Load, TC = 25oC VCC = 200 V, IC = 20A RG = 20Ω, VGE = 15V Resistive Load, TC = 125oC VCE = 200 V, IC = 20A VGE = 15V 2 FGPF30N30D Rev. A -- 10 -- ns -- 44 -- ns -- 76 -- ns -- 180 300 ns -- 10 - ns -- 46 -- ns -- 82 -- ns -- 270 -- ns -- 39 -- nC -- 6 -- nC -- 16 -- nC www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT Package Marking and Ordering Information Symbol Parameter Test Conditions VFM Diode Forward Voltage IF = 10A trr Diode Reverse Recovery Time IF = 10A dI/dt = 200A/µs Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge 3 FGPF30N30D Rev. A Min. Typ. Max. Units TC = 25°C -- 1.1 1.4 V TC = 125°C -- 0.9 -- TC = 25°C -- 21 -- TC = 125°C -- 35 -- TC = 25°C -- 2.8 -- TC = 125°C -- 5.6 -- TC = 25°C -- 29.4 -- TC = 125°C -- 98 -- ns A nC www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT Electrical Characteristics of DIODE TC = 25°C unless otherwise noted FGPF30N30D 300V, 30A PDP IGBT Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics Figure 1. Typical Output Characteristics 80 80 o o TC = 25 C 20V 12V 15V 10V 60 50 40 30 VGE = 8V 20 12V 15V 10V 60 50 40 VGE = 8V 30 20 10 10 0 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 Figure 3. Saturation Voltage 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 4. Transfer Characteristics 80 80 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C 60 Collector Current,IC [A] Collector Current, IC [A] TC = 125 C 20V 70 Collector Current, IC [A] 70 Collector Current, IC [A] Figure 2. Typical Output Characteristics o TC = 125 C 40 20 T C = 25 C 60 T = 125oC C 40 20 0 0 0 2 4 Collector-Emitter Voltage, VCE [V] 0 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2 4 6 8 10 12 14 Gate-Emitter Voltage,VGE [V] 16 Figure 6. Saturation Voltage vs.VGE 20 2.0 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Common Emitter 30A 1.5 20A 10A 1.0 Common Emitter VGE = 15V 0.5 25 50 75 100 o Case Temperature, TC [ C] C 12 20A 8 IC = 10A 4 30A 0 0 125 4 FGPF30N30D Rev. A o T = 25 C 16 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com (Continued) Figure 7. Saturation Voltage vs.VGE Figure 8. Capacitance Characteristics 20 2500 Common Emitter 12 8 Coes 100 Cres 30A 4 Common Emitter VGE = 0V, f = 1MHz 20A o TC = 25 C IC = 10A 0 0 10 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 20 Figure 9. Gate Charge Characteristics 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 200 100 Common Emitter RL = 10Ω 50us o TC = 25 C 12 100us Collector Current, Ic [A] 200V Vcc = 100V 9 6 3 0 0 8 16 24 Gate Charge, Qg [nC] 32 1ms 10 DC Operation 1 Single Nonrepetitive o Pulse Tc=25 C Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 40 Figure 11. Turn-On Characteristics vs. Gate Resistance 1 10 100 Collector-Emitter Voltage, V CE [V] 1000 Figure 12. Turn Off Characteristics vs. Gate Resistance 1000 100 Switching Time [ns] tr Switching Time [ns] 30 Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] Cies 1000 C Capacitance [pF] Collector-Emitter Voltage, VCE [V] o T = 125 C 16 FGPF30N30D 300V, 30A PDP IGBT Typical Performance Characteristics td(on) 10 Common Emitter VCC = 200V, VGE = 15V IC = 20A tf td(off) 100 Common Emitter V CC = 200V, V GE = 15V IC = 20A o TC = 25 C o T C = 25 C o TC = 125 C o T C = 125 C 10 1 0 20 40 60 80 Gate Resistance, RG [Ω ] 0 100 20 30 40 50 60 70 Gate Resistance, R G [ Ω ] 5 FGPF30N30D Rev. A 10 www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT Typical Performance Characteristics (Continued) Figure 13. Turn-On Characteristics vs. Collector Current Figure 14. Turn-Off Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 20Ω 100 tf o TC = 25 C tr o Switching Time [ns] Switching Time [ns] TC = 125 C td(on) 100 td(off) Common Emitter VGE = 15V, RG = 20Ω 10 o T C = 25 C o T C = 125 C 5 10 15 20 25 5 30 10 15 20 25 30 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs Gate Resistance Figure 16. Switching Loss vs Collector Current 1000 500 Eoff Switching Loss [uJ] Switching Loss [uJ] Eon Eon 100 Common Emitter VCC = 200V, VGE = 15V IC = 20A 100 Eoff 10 Common Emitter VGE = 15V, RG = 20Ω o o T C = 25 C TC = 25 C o o T C = 125 C TC = 125 C 10 0 10 20 30 40 50 Gate Resistance, RG [Ω ] 60 1 70 0 5 10 15 20 25 30 Collector Current, IC [A] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 Pdm 0 .0 1 s in g le p u ls e t1 0 .0 1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1 E -3 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c t a n g u la r P u ls e D u r a t i o n [ s e c ] 6 FGPF30N30D Rev. A www.fairchildsemi.com Figure 19. Typical Reverse Recovery Current 5 100 I F = 10A o 10 Reverse Recovery Current , Irr [A] Forward Current , IF [A] T J = 125 C o T J = 25 C 1 o T C = 25 C o T C = 125 C 0.1 0.0 0.5 1.0 1.5 2.0 o T C = 25 C 4 3 2 1 0 100 2.5 Forw ard Voltage , V F [V] 500 di/dt [A/ µ s] Figure 20. Typical Reverse Recovery Time 36 Reverse Recovery Time , trr [ns] IF = 10A o Tc = 25 C 32 28 24 100 500 di/dt [A/µ s] 7 FGPF30N30D Rev. A www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT Figure 18. Forward Characteristics 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 8 FGPF30N30D Rev. A 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT TO-220F TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ® ACEx Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com