FSB67508

FSB67508 Smart Power Module (SPM®) October 2009 FSB67508 Smart Power Module (SPM®) Features • RDS(ON).MAX=11mΩ @ ID=38A,TJ=25°C a half-bridge FRFET inverter including high voltage integrated circuit (HVIC) • Negative dc-link terminals for inverter current sensing applications • HVIC for gate driving and protection functions • 3/5V CMOS/TTL compatible, active-high interface • Isolation voltage rating of 1500Vrms for 1min. • Embedded bootstrap diode in the package SPM General Description TM FSB67508 is a smart power module (SPM®) as a compact solution for small power motor drive applications such as Ebike. It is composed of 2 MOSFET, and 1 half-bridge HVIC for gate driving. This offers an extremely compact, high performance half-bridge inverter in a single isolated package . The package is optimized for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned. Absolute Maximum Ratings Symbol VPN ID25 ID80 IDP PD VCC VBS VIN TJ TSTG RθJC Parameter DC Link Input Voltage, Drain-source Voltage of each FET Each FET Drain Current, Continuous Each FET Drain Current, Continuous Each FET Drain Current, Peak Maximum Power Dissipation Control Supply Voltage High-side Bias Voltage Input Signal Voltage Operating Junction Temperature Storage Temperature Junction to Case Thermal Resistance TC = 25°C TC = 80°C Conditions Rating 75 38 28 95 32 20 20 -0.3 ~ VCC -40 ~ 150 -50 ~ 150 Units V A A A W V V V °C °C °C/W TC = 25°C, Pulsed* TC = 25°C, Each Applied between VCC and COM Applied between VB and U Applied between IN and COM Each under inverter operating condition (Note 1) 3.9 *Repetitive rating : Pulse width limited by maximum junction temperature ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSB67508 Rev. A FSB67508 Smart Power Module (SPM®) Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 Pin Name P VS VB VCC HIN LIN COM NC N U Positive DC–Link Input Pin Description Bias Voltage Ground for High Side MOSFET Driving High-side Bias Voltage for MOSFET Driving Bias Voltage for IC and Low side MOSFET Driving Signal Input for High-side Signal Input for Low-side Common Supply Ground No connection Negative DC-Link Input Output (2) VS (3) VB (4) VCC (5) HIN (6) LIN (8) NC (7) COM VB VCC HIN LIN NC COM HO VS LO (9) N (10) U (1) P Note: Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM®. External connections should be made as indicated in Figure2. Figure 1. Internal Block Diagram 2 FSB67508 Rev. A www.fairchildsemi.com FSB67508 Smart Power Module (SPM®) Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified) Inverter Part (Each MOSFET Unless Otherwise Specified) Symbol BVDSS ΔBVDSS/ ΔTJ IDSS RDS(on) VSD tON tOFF trr EON EOFF RBSOA (Note 3) V = 55V, VCC = VBS = 15V, ID = IDP, VDS=BVDSS, Reverse-bias Safe Oper- PN TJ = 150°C ating Area High- and low-side FET switching (Note 3) Switching Times Parameter Conditions Min 75 - Typ 0.6 9.4 550 2000 100 40 190 Max Units 250 11 1.2 V V μA mΩ V ns ns ns μJ μJ Drain-Source Breakdown VIN= 0V, ID = 250μA (Note 2) Voltage Breakdown Voltage TemID = 250μA, Referenced to 25°C perature Coefficient Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Drain-Source Diode Forward Voltage VIN= 0V, VDS = 75V VCC = VBS = 15V, VIN = 5V, ID = 15A VCC = VBS = 15V, VIN = 0V, ID = 15A VPN = 48V, VCC = VBS = 15V, ID = 15A VIN = 0V ↔ 5V Inductive load L=3mH High- and low-side FET switching Full Square Control Part (Each HVIC Unless Otherwise Specified) Symbol IQCC IQBS UVCCD UVCCR UVBSD UVBSR VIH VIL IIH IIL Parameter Quiescent VCC Current Quiescent VBS Current Low-side Undervoltage Protection (Figure 6) High-side Undervoltage Protection (Figure 7) ON Threshold Voltage OFF Threshold Voltage Input Bias Current VCC=15V, VIN=0V VBS=15V, VIN=0V Conditions Applied between VCC and COM Applied between VB(U)-U, VB(V)-V, VB(W)-W Min Typ Max Units 7.4 8.0 7.4 8.0 3.0 8.0 8.9 8.0 8.9 10 160 100 9.4 9.8 9.4 9.8 0.8 20 2 μA μA V V V V V V μA μA VCC Undervoltage Protection Detection Level VCC Undervoltage Protection Reset Level VBS Undervoltage Protection Detection Level VBS Undervoltage Protection Reset Level Logic High Level Logic Low Level VIN = 5V VIN = 0V Applied between IN and COM Applied between IN and COM Note: 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FET inside SPM®. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VDS should not exceed BVDSS in any case. 2. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 3 for the switching time definition with the switching test circuit of Figure 4. 3. The peak current and voltage of each FET during the switching operation should be included in the safe operating area (SOA). Please see Figure 4 for the RBSOA test circuit that is same as the switching test circuit. Package Marking & Ordering Information Device Marking FSB67508 Device FSB67508 Package SPM10-AA Reel Size _ Tape Width _ Quantity 19 3 FSB67508 Rev. A www.fairchildsemi.com FSB67508 Smart Power Module (SPM®) Recommended Operating Conditions Symbol VPN VCC VBS VIN(ON) VIN(OFF) tdead fPWM Parameter Supply Voltage Control Supply Voltage High-side Bias Voltage Input ON Threshold Voltage Input OFF Threshold Voltage Conditions Applied between P and N Applied between VCC and COM Applied between VB and output Applied between IN and COM Value Min. 13.5 13 3.0 0 1.0 - Typ. 48 15 15 15 Max. 60 16.5 16.5 VCC 0.6 - Units V V V V V μs kHz Blanking Time for Preventing VCC=VBS=13.5 ~ 20V, TJ ≤ 150°C Arm-short PWM Switching Frequency TJ ≤ 150°C These values depend on PWM control algorithm 15-V Line C1 VS P VB R5 VCC HIN LIN NC C5 COM LO N N R3 HO VS U Inverter Output C3 P VDC FO 1 1 1 1 1 HIN 0 0 1 1 Open x LIN 0 1 0 1 Open x Output Z 0 VDC Forbidden Z Z Note Both FET Off Low-side FET On High-side FET On Shoot-through Same as (0, 0) Same as (0, 0) Micom 10μF C2 * Example of bootstrap paramters: C1 = C2 = 1μF ceramic capacitor, 0 Note: (1) The snubber capacitor, C3, should be placed near SPM® (2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above. (3) RC coupling(R5 and C5) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. Signal input of SPM® is compatible with standard CMOS or LSTTL outptus. (4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C1, C2 and C3 should have good high-frequency characteristics to absorb high-frequency ripple current. Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters Bootstrap Diode Part Symbol VRRM IF IFP TJ RB Parameter Maixmum Repetitive Reverse Voltage Forward Current Forward Current (Peak) Operating Junction Temperature Equivalent Bootstrap Resistance TC = 25°C TC = 25°C Conditions Rating 75 0.5 2 -40 ~ 150 15 Units V A A °C Ω TC = 25°C, Under 1ms Pulse Width 4 FSB67508 Rev. A www.fairchildsemi.com FSB67508 Smart Power Module (SPM®) VIN Irr VDS 100% of ID 120% of ID VIN ID 10% of ID ID VDS tON trr tOFF (a) Turn-on (b) Turn-off Figure 3. Switching Time Definition V CC CB S VS P VB VCC H IN LIN NC COM O n e-le g D iagra m of S P M LO N HO VS U + V DS L ID V DC Figure 4. Switching and RBSOA(Single-pulse) Test Circuit (Low-side) Input Signal UV Protection Status RESET DETECTION RESET Low-side Supply, VCC UVCCR UVCCD MOSFET Current Figure 5. Undervoltage Protection (Low-side) Input Signal UV Protection Status RESET DETECTION RESET High-side Supply, VBS UVBSR UVBSD MOSFET Current Figure 6. Undervoltage Protection (High-side) 5 FSB67508 Rev. A www.fairchildsemi.com FSB67508 Smart Power Module (SPM®) (2) VS (3) VB (4) VCC R5 (5) HIN (6) LIN C2 C5 (8) NC (7) COM (1) P VB VCC HIN VS LIN NC COM (1) P VB VCC HO VS LIN NC COM (1) P VB VCC HO VS LIN NC COM LO (9) N (10) W LO (9) N (10) V LO (9) N HO (10) U C 3 V DC (2) VS (3) VB (4) VCC Micom (5) HIN (6) LIN C2 (8) NC (7) COM HIN M (2) VS (3) VB (4) VCC (5) HIN (6) LIN C2 (8) NC (7) COM HIN R For 3-phase current sensing and protection 4 C4 +15V Supply R 3 Fig. 7. Example of Application Circuit 1.0 0.9 0.8 0.7 0.6 Built in Bootstrap Diode VF-IF Characteristic IF [A] 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 TC=25℃ 13 14 15 VF [V] Note: Built in bootstrap diode includes around 15Ω resistance characteristic. Figure 8. Built in Bootstrap Diode Characteristics 6 FSB67508 Rev. A www.fairchildsemi.com FSB67508 Smart Power Module (SPM®) Detailed Package Outline Drawings 7 FSB67508 Rev. A www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise ® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ PDP SPM™ Power-SPM™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com