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FSEZ1216B

FSEZ1216B

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    FSEZ1216B - Primary-Side-Regulation PWM Integrated Power MOSFET - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
FSEZ1216B 数据手册
FSEZ1216B — Primary-Side-Regulation PWM Integrated Power MOSFET January 2009 FSEZ1216B Primary-Side-Regulation PWM Integrated Power MOSFET Features Constant-Voltage (CV) and Constant-Current (CC) Control without Secondary-Feedback Circuitry Green-Mode Function: PWM Frequency Linearly Decreasing Fixed PWM Frequency at 50kHz with Frequency Hopping to Solve EMI Problems Cable Compensation in CV mode Low Startup Current: 10μA Low Operating Current: 3.5mA Peak-Current-Mode Control in CV Mode Cycle-by-Cycle Current Limiting VDD Over-Voltage Protection (OVP) with Auto-Restart VDD Under-Voltage Lockout (UVLO) Fixed Over-Temperature Protection (OTP) with Latch DIP-8 Package Available Description This highly integrated PWM controller provides several features to enhance the performance of low-power flyback converters. The proprietary topology enables most simplified circuit design especially for battery charger applications. A low-cost, smaller, and lighter charger results when compared to a conventional design or a linear transformer. The startup current is only 10μA, which allows large startup resistance for further power saving. To minimize the standby-power consumption, the proprietary green-mode function provides off-time modulation to linearly decrease PWM frequency under light-load conditions. This green-mode function assists the power supply in meeting power conservation requirements. By using FSEZ1216B, a charger can be implemented with few external components and minimized cost. A typical output CV/CC characteristic envelope is shown in Figure 1. FSEZ1216B series controllers are available in an 8-pin DIP package. Applications Battery Chargers for Cellular Phones, Cordless Phones, PDA, Digital Cameras, Power Tools Best Choice to Replace Linear Transformer and RCC SMPS Figure 1. Typical Output V-I Characteristic Ordering Information Part Number FSEZ1216BNY Operating Temperature Range -40°C to +105°C Eco Status Green Package 8-Lead, Dual Inline Package (DIP-8) Packing Method Tube For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. © 2008 Fairchild Semiconductor Corporation FSEZ1216B Rev. 1.0.0 www.fairchildsemi.com FSEZ1216B — Primary-Side-Regulation PWM Integrated Power MOSFET Application Diagram Figure 2. Typical Application Internal Block Diagram Brownout Protection Vsah Vsah IPK Figure 3. © 2008 Fairchild Semiconductor Corporation FSEZ1216B Rev. 1.0.0 Functional Block Diagram www.fairchildsemi.com 2 FSEZ1216B — Primary-Side-Regulation PWM Integrated Power MOSFET Marking Information DXYTT Z XYTT EZ1216B TPM F- Fairchild Logo Z- Plant Code X- 1 Digit Year Code Y- 1 Digit Week Code TT: 2 Digits Die Run Code T: Package Type (N=DIP) P: Y: Green Package M: Manufacture Flow Code Figure 4. Top Mark Pin Configuration CS COMR COMI COMV Figure 5. DRAIN GND VDD VS Pin Configuration Pin Definitions Pin # 1 2 3 4 5 6 7 8 Name CS COMR COMI COMV VS VDD GND DRAIN Description Analog Input, Current Sense. Connected to a current-sense resistor for peak-current-mode control in CV mode. The current-sense signal is also provided for output-current regulation in CC mode. Analog Output, Cable Compensation. Connect a resistor between COMR and GND for cable loss compensation in CV mode. Analog Output, Current Compensation. Output of the current error amplifier. Connect a capacitor between COMI pin and GND for frequency compensation. Analog Output, Voltage Compensation. Output of the voltage error amplifier. Connect a capacitor between COMV pin and GND for frequency compensation. Analog Input, Voltage Sense. Output-voltage-sense input for output-voltage regulation. Supply, Power Supply. Voltage Reference, Ground. Driver Output, Power MOSFET Drain. This pin is the high-voltage power MOSFET drain © 2008 Fairchild Semiconductor Corporation FSEZ1216B Rev. 1.0.0 www.fairchildsemi.com 3 FSEZ1216B — Primary-Side-Regulation PWM Integrated Power MOSFET Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol VVDD VVS VCS VCOMV VCOMI VDS ID IDM EAS IAR PD RθJA RθJC TJ TSTG TL ESD DC Supply Voltage VS Pin Input Voltage CS Pin Input Voltage Parameter (1,2) Min. -0.3 -0.3 -0.3 -0.3 TC=25°C TC=100°C Max. 30 7.0 7.0 7.0 7.0 600 1 0.6 4 33 1 800 113 67 +150 Unit V V V V V V A A A mJ A mW °C/W °C/W °C °C °C KV V Voltage-Error Amplifier Output Voltage Voltage-Error Amplifier Output Voltage Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Single-Pulse Avalanche Energy Avalanche Current Power Dissipation (TA<50°C) Thermal Resistance (Junction-to-Air) Thermal Resistance (Junction-to-Case) Operating Junction Temperature Storage Temperature Range Lead Temperature (Wave Soldering or IR, 10 Seconds) Electrostatic Discharge Capability, Human Body Model, JEDEC: JESD22-A114 Electrostatic Discharge Capability, Charged Device Model, JEDEC: JESD22-C101 -55 +150 +260 3.0 1000 Notes: 1. Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. 2. All voltage values, except differential voltages, are given with respect to GND pin. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol TA Parameter Operating Ambient Temperature Min. -40 Typ. Max. +105 Unit °C © 2008 Fairchild Semiconductor Corporation FSEZ1216B Rev. 1.0.0 www.fairchildsemi.com 4 FSEZ1216B — Primary-Side-Regulation PWM Integrated Power MOSFET Electrical Characteristics VDD=15V, TA=25°C, unless otherwise specified. Symbol VDD SECTION VOP VDD-ON VDD-OFF IDD-ST IDD-OP Parameter Continuously Operating Voltage Turn-On Threshold Voltage Turn-Off Threshold Voltage Startup Current Operating Current Green-Mode Operating Supply Current VDD Over-Voltage-Protection Level VDD Over-Voltage-Protection Debounce Time Center Frequency FrequencyHopping Range Conditions Min. Typ. Max. 25 Units V V V μA mA 15 4.5 0
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