KSA1370

KSA1370 KSA1370 Crt Display, Video Output • High Voltage • Low Reverse Transfer Capacitance : Cre= 1.7pF 1 TO-92L 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Trnsistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -200 -200 -5 -100 -200 1.0 150 -55 ~ 150 Units V V V mA mA W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob Cre Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC= -10µA, IE=0 IC= -1mA, IB=0 IE= -10µA, IC=0 VCB= -150V, IE=0 VEB= -4V, IC=0 VCE= -10V, IC= -10mA IC= -20mA, IB= -2mA IC= -20mA, IB= -2mA VCE= -30V, IC= -10mA VCB= -30V, f=1MHz VCB= -30V, f=1MHz 150 2.6 1.7 100 Min. -200 -200 -5 -0.1 -0.1 320 -0.6 -1.0 V V MHz pF pF Typ. Max. Units V V V µA µA ©2002 Fairchild Semiconductor Corporation Rev. C, December 2002 KSA1370 Typical Characteristics -160 1000 Pulse Test IC[mA], COLLECTOR CURRENT -140 VCE= - 5V Pulse Test -100 IB=-500µA IB=-450µA IB=-400µA IB=-350µA IB=-300µA IB=-250µA IB=-200µA IB=-150µA IB=-100µA IB=-50µA IB=0 hFE, DC CURRENT GAIN -120 100 -80 -60 10 -40 -20 -0 -20 -40 -60 -80 -100 -120 -140 -160 1 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE(sat), VBE(sat)[V], SATURATION VOLTAGE -10 100 IC = - 10 IB Pulse Test f=1.0MHz IE=0 (Cob ) Cob[pF] Cib [pF], CAPACITANCE IC=0 (Cib) Cib -1 VBE(sat) 10 -0.1 VCE(sat) Cob -0.01 -0.1 1 -1 -10 -100 -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT VEB[V], EMITTER-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 -1000 VCE = -10V Ta=25 C Single Pulse ICMAX(Pulse) s 0µ 50 s 1m ms 10 o IC[A], COLLECTOR CURRENT -100 ICMAX(DC) 100 -10 10 -1 -10 -100 -1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area ©2002 Fairchild Semiconductor Corporation VCEOMAX Rev. C, December 2002 KSA1370 Typical Characteristics (Continued) 160 140 dT[%], IC DISSIPATION 120 100 80 60 40 S/B Lim ited Di ss ipa tio nL im ite d 20 0 0 50 o 100 150 200 TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas ©2002 Fairchild Semiconductor Corporation Rev. C, December 2002 KSA1370 Package Dimensions TO-92L 4.90 ±0.20 8.00 ±0.20 1.70 ±0.20 1.00 ±0.10 0.70MAX. 0.80 ±0.10 1.00MAX. 13.50 ±0.40 0.50 ±0.10 1.27TYP [1.27 ±0.20] 2.54 TYP 0.45 ±0.10 1.45 ±0.20 3.90 ±0.20 3.90 ±0.20 0.45 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. C, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1