KSA992FATA

PNP Epitaxial Silicon Transistor KSA992 Features • Audio Frequency Low−Noise Amplifier • Complement to KSC1845 • These are Pb−Free Devices www.onsemi.com MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage −120 V VCEO Collector−Emitter Voltage −120 V VEBO Emitter−Base Voltage −5 V IC Collector Current −50 mA IB Base Current −10 mA TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise 12 1 3 1. Emitter 2. Collector 3. Base 2 3 TO−92 3 4.825x4.76 TO−92 3 4.83x4.76 CASE 135AN LEADFORMED CASE 135AR MARKING DIAGRAM AA9 92X YWW AA9 92X YWW noted.) (Note 1) Symbol PD Parameter Power Dissipation Derate Above 25°C RqJA Thermal Resistance, Junction−to−Ambient Value Unit 500 mW 4 mW/°C 250 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. A A992 X YWW = Assembly Code = Device Code = F / FA / FB = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2004 April, 2021 − Rev. 3 1 Publication Order Number: KSA992/D KSA992 ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Min Typ Max Unit ICBO Collector Cut−Off Current Parameter VCB = −120 V, IE = 0 − − −50 nA ICEO Collector Cut−Off Current VCE = −100 V, IB = 0 − − −1 mA IEBO Emitter Cut−Off Current VEB = −5 V, IC = 0 − − −50 nA hFE1 DC Current Gain VCE = −6 V, IC = −0.1 mA 150 500 − VCE = −6 V, IC = −1 mA 200 500 800 hFE2 Conditions VBE(on) Base−Emitter On Voltage VCE = −6 V, IC = −1 mA −0.55 −0.61 −0.65 V VCE(sat) Collector−Emitter Saturation Voltage IC = −10 mA, IB = −1 mA − −0.09 −0.30 V Current Gain Bandwidth Product VCE = −6 V, IC = −1 mA 50 100 − MHz Cob Output Capacitance VCB = −30 V, IE = 0, f = 1 MHz − 2 3 pF NF Noise Figure VCE = −5 V, IC = −1.0 mA, RS = 100 kW, f = 1 kHz − 7 − dB fT Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE CLASSIFICATION Classification P F FA FB E hFE2 200~400 300~600 300~470 430~600 400~800 www.onsemi.com 2 KSA992 TYPICAL PERFORMANCE CHARACTERISTICS −10 IB = −1.2 mA −0.8 IB = −1.0 mA IB = −0.8 mA −0.6 IB = −0.6 mA −0.4 IB = −0.4 mA −0.2 0.0 IB = −0.2 mA IB = 0 0 −20 −40 −60 −80 IB = −16 mA −6 IB = −12 mA −4 IB = −8 mA IB = −4 mA −2 IB = 0 0 −3 −4 Figure 2. Static Characteristic 600 400 200 −0.1 −1 −10 −10 −1 VBE(sat) −0.1 VCE(sat) −0.01 −0.1 −100 −10 −100 Figure 4. Base−Emitter Saturation Voltage and Collector−Emitter Saturation Voltage 1 −100 1000 fT, CURRENT GAIN−BANDWIDTH PRODUCT (MHz) IE = 0 f = 1 MHz −10 −1 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain 10 −5 IC = 10 − IB IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) −2 Figure 1. Static Characteristic 800 0.1 −1 −1 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE = −6 V 0 −0.01 IB = −20 mA −8 0 −100 IB = −24 mA VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) IB = −1.2 mA VCE(sat), VBE(sat), SATURATION VOLTAGE (V) IC, COLLECTOR CURRENT (mA) −1.0 VCE = −6 V 100 10 1 −1000 0 VCB, COLLECTOR−BASE VOLTAGE (V) 1 10 IE, COLLECTOR CURRENT (mA) Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product www.onsemi.com 3 100 KSA992 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) PC, POWER DISSIPATION (mW) 800 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 Ta, AMBIENT TEMPERATURE (°C) Figure 7. Power Derating ORDERING INFORMATION Part Number Top Mark Package Shipping† KSA992FBU A992 TO−92 3L (Pb−Free) 10000 Units / Bulk KSA992FTA A992 TO−92 3L (Pb−Free) 2000 / Tape & Ammo KSA992FATA A992 TO−92 3L (Pb−Free) 2000 / Tape & Ammo KSA992FBTA A992 TO−92 3L (Pb−Free) 2000 / Tape & Ammo †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.825x4.76 CASE 135AN ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13880G TO−92 3 4.825X4.76 DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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