KSA992

KSA992 KSA992 Audio Frequency Low Noise Amplifier • Complement to KSC1845 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -120 -120 -5 -50 -10 500 150 -55 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO ICEO IEBO hFE1 hFE2 VBE (on) VCE (sat) fT Cob NV Parameter Collector Cut-off Current Collector Cur-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Voltage Test Condition VCB= -120V, IE=0 VCE= -100V, IB=0 VEB= -5mA, IC=0 VCE= -6V, IC= -0.1mA VCE= -6V, IC= -1mA VCE= -6V, IC= -1mA IC= -10mA, IB= -1mA VCE= -6V, IC= -1mA VCB= -30V, IE=0, f=1MHz VCE = -5.0V, IC = -1.0mA, RG =100KW, GV = 80dB, f = 10Hz to 1.0KHz 50 150 200 -0.55 500 500 -0.61 -0.09 100 2 25 3 40 Min. Typ. Max. -50 -1 -50 800 -0.65 -0.3 V V MHz pF mV Units nA µA nA hFE2 Classification Classification hFE2 P 200 ~ 400 F 300 ~ 600 E 400 ~ 800 ©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 KSA992 Typical Characteristics -1.0 IB = -1.2µA -10 IB = -1.2µA IB = -1.0µA IB = -0.8µA IB = -24µA IC[mA], COLLECTOR CURRENT -0.8 IC[mA], COLLECTOR CURRENT IB = -20µA IB = -16µA -8 -0.6 -6 IB = -0.6µA -0.4 IB = -12µA IB = -8µA -4 IB = -0.4µA -0.2 IB = -0.2µA IB = 0 0 -20 -40 -60 -80 -100 -2 IB = -4µA 0.0 0 0 -1 -2 IB = 0 -3 -4 -5 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic 1000 VCE(sat), VBE(sat)[V], SATURATION VOLTAGE -10 VCE= -6V 800 IC = 1 0 - IB hFE, DC CURRENT GAIN -1 VBE(sat) 600 400 -0.1 VCE(sat) 200 0 -0.01 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 10 1000 IE=0 f = 1MHz VCE = -6V Cob [pF], CAPACITANCE 100 1 10 0.1 -1 -10 -100 -1000 1 0.1 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE IE[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product ©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 KSA992 Typical Characteristics (Continued) 800 700 PC[mW], POWER DISSIPATION 600 500 400 300 200 100 0 0 25 50 o 75 100 125 150 175 Ta[ C], AMBIENT TEMPERATURE Figure 7. Power Derating ©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 KSA992 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I11