SI9933ADY

Si9933ADY January 2001 Si9933ADY Dual P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –5 A, –20 V, RDS(ON) = 75 mΩ @ V GS = –4.5 V RDS(ON) = 105 mΩ @ V GS = –3.0 V RDS(ON) = 115 mΩ @ V GS = –2.7 V • Extended V GSS range (±12V) for battery applications • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • • • • Load switch Motor drive DC/DC conversion Power management 5 6 7 Q2 Q1 4 3 2 1 8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed T A=25oC unless otherwise noted Parameter Ratings –20 ±12 –3.4 –16 2 (Note 1a) (Note 1b) (Note 1c) Units V V A W (Note 1a) Power Dissipation for Dual Operation Power Dissipation for Single Operation 1.6 1 0.9 –55 to +175 °C TJ , TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking 9933A © 2001 Fairchild Semiconductor International Device Si9933ADY Reel Size 13’’ Tape width 12mm Quantity 2500 units Si9933ADY Rev A(W) Si9933ADY Electrical Characteristics Symbol BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions V GS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C V DS = –16 V, V GS = –12 V, V GS = 12 V, V GS = 0 V V DS = 0 V V DS = 0 V Min –20 Typ Max Units V Off Characteristics –12 –1 –100 100 mV/°C µA nA nA On Characteristics V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C V GS = –4.5 V, V GS = –3.0 V, V GS = –2.7 V, V GS = –4.5 V, V DS = –9 V, ID = –3.2 A ID = –2.0 A ID = –1.0 A V DS = –5 V ID = –3.4 A –0.8 –1.0 3 44 64 72 –1.5 V mV/°C 75 105 115 mΩ ID(on) gFS –16 8 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) V DS = –10 V, f = 1.0 MHz V GS = 0 V, 825 420 150 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge V DD = –6 V, V GS = –4.5 V, ID = –1 A, RGEN = 6 Ω 16 46 40 25 40 80 70 40 20 ns ns ns ns nC nC nC V DS = –6 V, V GS = –4.5 V ID = –3.2 A, 10 2.1 3.3 Drain–Source Diode Characteristics and Maximum Ratings IS V SD Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while Rθ CA is determined by the user's board design. Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –2.0 A Voltage –2.0 (Note 2) –0.7 1.2 A V a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2.0% Si9933ADY Rev A(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G