MRF18030A

Freescale Semiconductor Technical Data Document Number: MRF18030A Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805 - 1880 MHz. • Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts • Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF18030ALR3 MRF18030ALSR3 1800- 1880 MHz, 30 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF18030ALR3 CASE 465F - 04, STYLE 1 NI - 400S MRF18030ALSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 83.3 0.48 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 2.1 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF18030ALR3 MRF18030ALSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture) (2) Output Power, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Common- Source Amplifier Power Gain @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Drain Efficiency @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) 1. Part internally matched both on input and output. 2. Device specifications obtained on a Production Test Fixture. P1dB Gps η IRL 27 13 46.5 — 30 14 50 - 12 — — — -9 W dB % dB Crss — 1.3 — pF VGS(th) VGS(Q) VDS(on) gfs 2 2 — — 3 3.9 0.29 2 4 4.5 0.4 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 1 1 Vdc μAdc μAdc Symbol Min Typ Max Unit MRF18030ALR3 MRF18030ALSR3 2 RF Device Data Freescale Semiconductor VGG R2 R3 C7 R1 C8 Z9 C4 + VDD C10 RF INPUT Z4 Z1 C1 Z2 C2 C9 Z3 DUT Z5 Z6 C3 Z7 C6 Z8 RF OUTPUT C5 C1 C2 C3 C4, C5 C6, C7, C8 C9 C10 R1 R2, R3 1.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 1.0 pF, 100B Chip Capacitor 1.2 pF, 100B Chip Capacitors 8.2 pF, 100B Chip Capacitors 0.3 pF, 100B Chip Capacitor 220 mF, 63 V Electrolytic Capacitor 1.0 kΩ, 1/8 W Chip Resistor (0805) 10 kΩ, 1/8 W Chip Resistors (0805) Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.874″ x 0.087″ Microstrip 1.094″ x 0.087″ Microstrip 0.257″ x 0.633″ Microstrip 0.189″ x 0.394″ Microstrip 0.335″ x 0.394″ Microstrip 0.484″ x 0.087″ Microstrip 0.877″ x 0.087″ Microstrip 0.366″ x 0.087″ Microstrip ≈0.600″ x 0.087″ Microstrip Figure 1. 1805 - 1880 MHz Test Fixture Schematic VBIAS R2R3 C7 C1 C9 C2 C5 C3 R1 C8 C4 C6 C10 VSUPPLY Ground (bias) MRF18030A Ground (supply) Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1805 - 1880 MHz Test Fixture Component Layout MRF18030ALR3 MRF18030ALSR3 RF Device Data Freescale Semiconductor 3 TYPICAL CHARACTERISTICS 16 15 G ps , POWER GAIN (dB) 14 13 12 11 10 VDD = 26 Vdc IDQ = 250 mA T = 25_C 1750 1800 1850 f, FREQUENCY (MHz) IRL @ 15 W −25 −30 1950 Gps @ 15 W Gps @ 30 W IRL @ 30 W 0 P out, OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) −5 −10 −15 −20 40 35 30 25 20 15 10 5 0 1780 1800 1820 1840 1860 1880 1900 1920 0.5 W 0.25 W Pin = 2 W 1W VDD = 26 Vdc IDQ = 250 mA T = 25_C 1900 f, FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power versus Frequency 16 15 G ps , POWER GAIN (dB) 14 200 mA 13 12 11 10 100 mA VDD = 26 Vdc f = 1840 MHz T = 25_C 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) IDQ = 400 mA G ps , POWER GAIN (dB) 300 mA 16 15 14 13 12 11 10 9 24 VDD = 26 Vdc IDQ = 250 mA f = 1840 MHz 26 28 30 32 34 36 38 40 42 44 46 48 Pout, OUTPUT POWER (dBm) T = 25_C 55_C 85_C Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 15 14 G ps , POWER GAIN (dB) 13 12 11 10 9 IDQ = 250 mA f = 1840 MHz T = 25_C 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) 30 V 28 V 26 V 24 V VDD = 22 Vdc G ps , POWER GAIN (dB) 16 15 14 13 12 11 10 VDD = 26 Vdc IDQ = 250 mA f = 1840 MHz Gps 60 50 40 30 20 η 10 0 η, DRAIN EFFICIENCY (%) 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Efficiency versus Output Power MRF18030ALR3 MRF18030ALSR3 4 RF Device Data Freescale Semiconductor f = 2110 MHz Zload f = 1710 MHz Zsource f = 2110 MHz Zo = 25 Ω f = 1710 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 W (CW) f MHz 1710 1785 1805 1840 1880 1960 1990 2110 Zsource Ω 2.92 - j8.24 3.84 - j9.75 4.15 - j10.38 4.04 - j10.22 6.12 - j12.29 6.20 - j12.29 8.61 - j12.10 15.19 - j11.85 Zload Ω 4.18 - j9.06 4.59 - j9.46 4.98 - j9.06 6.10 - j7.63 5.83 - j6.89 5.55 - j6.33 5.93 - j6.66 3.82 - j5.33 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF18030ALR3 MRF18030ALSR3 RF Device Data Freescale Semiconductor 5 NOTES MRF18030ALR3 MRF18030ALSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 TB M A M B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC TA M B M TA M B E M ccc C M TA M B M R (LID) F aaa M TA A M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M TA M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465E - 04 ISSUE F NI - 400 MRF18030ALR3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K ccc E M TA M B M R C 3 (LID) N ccc M TA M B M (LID) F A (FLANGE) A T M SEATING PLANE H S (INSULATOR) aaa (FLANGE) M TA M B M (INSULATOR) aaa M TA M B M B B STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF18030ALSR3 MRF18030ALR3 MRF18030ALSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF18030ALR3 MRF18030ALSR3 8Rev. 8, 5/2006 Document Number: MRF18030A RF Device Data Freescale Semiconductor