MRF18030A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18030A/D The RF MOSFET Line RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805 - 1880 MHz. • Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power • Excellent Thermal Stability • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. 1.8 - 1.88 GHz, 30 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF18030ALR3 Freescale Semiconductor, Inc... CASE 465F - 04, STYLE 1 NI - 400S MRF18030ALSR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 83.3 0.48 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 2.1 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Rev. 6 MOTOROLA RF  Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18030ALR3 MRF18030ALSR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 2 — — 3 3.9 0.29 2 4 4.5 0.4 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 1 1 Vdc µAdc µAdc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) Output Power, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Common - Source Amplifier Power Gain @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Drain Efficiency @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Output Mismatch Stress @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f1 = 1805 - 1880 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. (2) Device specifications obtained on a Production Test Fixture. Crss — 1.3 — pF P1dB Gps η IRL Ψ 27 13 46.5 — 30 14 50 - 12 — — — -9 Watts dB % dB No Degradation In Output Power Before and After Test MRF18030ALR3 MRF18030ALSR3 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. VDD C8 VGG R2 Z9 R3 C7 R1 C4 Z4 RF INPUT Z1 C1 Z2 C2 C9 Z3 DUT C5 Z5 Z6 C3 Z7 C6 Z8 RF OUTPUT + C10 Freescale Semiconductor, Inc... C1 C2 C3 C4, C5 C6, C7, C8 C9 C10 R1 R2, R3 1.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 1.0 pF, 100B Chip Capacitor 1.2 pF, 100B Chip Capacitors 8.2 pF, 100B Chip Capacitors 0.3 pF, 100B Chip Capacitor 220 mF, 63 V Electrolytic Capacitor 1.0 kΩ, 1/8 W Chip Resistor (0805) 10 kΩ, 1/8 W Chip Resistors (0805) Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.874″ x 0.087″ Microstrip 1.094″ x 0.087″ Microstrip 0.257″ x 0.633″ Microstrip 0.189″ x 0.394″ Microstrip 0.335″ x 0.394″ Microstrip 0.484″ x 0.087″ Microstrip 0.877″ x 0.087″ Microstrip 0.366″ x 0.087″ Microstrip ≈0.600″ x 0.087″ Microstrip Figure 1. 1805 - 1880 MHz Test Fixture Schematic VBIAS R2R3 C7 C1 C9 C5 C2 C3 C8 C4 C6 C10 VSUPPLY R1 MRF18030A Ground (bias) Ground (supply) Figure 2. 1805 - 1880 MHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18030ALR3 MRF18030ALSR3 3 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 16 15 G ps , POWER GAIN (dB) 14 13 IRL @ 30 W 12 IRL @ 15 W 11 10 1750 VDD = 26 Vdc IDQ = 250 mA T = 25_C 1800 1850 f, FREQUENCY (MHz) 1900 −25 −30 1950 −20 Gps @ 15 W Gps @ 30 W 0 P out, OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) −5 −10 −15 40 35 30 25 20 0.5 W 15 10 5 0 1780 0.25 W VDD = 26 Vdc IDQ = 250 mA T = 25_C Pin = 2 W 1W 1800 1820 1840 1860 1880 1900 1920 f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power versus Frequency 16 15 G ps , POWER GAIN (dB) 14 200 mA 13 12 11 10 0.1 1 10 Pout, OUTPUT POWER (WATTS) 100 mA VDD = 26 Vdc f = 1840 MHz T = 25_C 100 IDQ = 400 mA G ps , POWER GAIN (dB) 300 mA 16 15 14 13 12 11 10 9 24 VDD = 26 Vdc IDQ = 250 mA f = 1840 MHz 26 28 30 32 34 36 38 40 42 44 46 48 T = 25_C 55_C 85_C Pout, OUTPUT POWER (dBm) Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 15 14 G ps , POWER GAIN (dB) 13 12 11 VDD = 22 Vdc 10 9 0.1 IDQ = 250 mA f = 1840 MHz T = 25_C 1 10 100 30 V 28 V 26 V 24 V G ps , POWER GAIN (dB) 16 15 14 13 12 11 10 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) VDD = 26 Vdc IDQ = 250 mA f = 1840 MHz 60 50 40 30 20 η 10 0 η, DRAIN EFFICIENCY (%) Gps Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Efficiency versus Output Power MRF18030ALR3 MRF18030ALSR3 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. f = 2110 MHz Zload f = 1710 MHz Zsource f = 2110 MHz Z o = 25 Ω f = 1710 MHz Freescale Semiconductor, Inc... VDD = 26 V, IDQ = 250 mA, Pout = 30 W (CW) f MHz 1710 1785 1805 1840 1880 1960 1990 2110 Zsource Ω 2.92 - j8.24 3.84 - j9.75 4.15 - j10.38 4.04 - j10.22 6.12 - j12.29 6.20 - j12.29 8.61 - j12.10 15.19 - j11.85 Zload Ω 4.18 - j9.06 4.59 - j9.46 4.98 - j9.06 6.10 - j7.63 5.83 - j6.89 5.55 - j6.33 5.93 - j6.66 3.82 - j5.33 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18030ALR3 MRF18030ALSR3 5 Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MRF18030ALR3 MRF18030ALSR3 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 TB M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC B TA M B M TA M B E M ccc C M TA M B M Freescale Semiconductor, Inc... R (LID) F aaa M TA M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc TA M A CASE 465E - 04 ISSUE E NI - 400 MRF18030ALR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K ccc E TA B R C 3 (LID) M M M N ccc M TA M B M (LID) F A (FLANGE) A T M SEATING PLANE H S (INSULATOR) aaa (FLANGE) M TA M B M (INSULATOR) B B aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE C NI - 400S MRF18030ALSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18030ALR3 MRF18030ALSR3 7 Freescale Semiconductor, Inc. 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Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3- 3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF18030A/D MRF18030ALR3 MRF18030ALSR3 ◊ MOTOROLA RF DEVICE DATA For More Information On This Product, 8 Go to: www.freescale.com