MRF18090A

Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications. • GSM and GSM EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts CW Efficiency — 52% (Typ) @ 90 Watts CW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF18090AR3 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET CASE 465B - 03, STYLE 1 NI - 880 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 250 1.43 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.7 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF18090AR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture) Common- Source Amplifier Power Gain @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz) Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1805 - 1880 MHz) Gps η IRL — — - 10 dB 12.0 47 13.5 52 — % — dB Crss — 4.2 — pF VGS(Q) VDS(on) gfs 2.5 — — 3.7 0.1 7.2 4.5 — — Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc μAdc μAdc Symbol Min Typ Max Unit 1. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch - to - batch consistency. MRF18090AR3 2 RF Device Data Freescale Semiconductor VSUPPLY R1 VBIAS + C1 R2 C2 R3 RF INPUT Z1 Z2 Z3 C3 Z4 Z5 DUT Z10 RF OUTPUT C5 C6 + C8 Z6 Z7 Z8 C7 Z9 C4 C1 C2, C3 C4 C5, C6 C7 C8 R1, R2 R3 Z1 Z2 10 mF, 35 V Tantalum Capacitor, Vishay - Sprague #293D106X9035D 10 pF, 100B Chip Capacitor , ATC #100B100GW 3.3 pF, 100B Chip Capacitor, ATC #100B3R3BW 6.8 pF, 100B Chip Capacitors, ATC #100B6R8CW 12 pF, 100B Chip Capacitors, ATC #100B120GW 220 mF, 63 V Electrolytic Capacitor, Philips #13668221 10 kW, 1/8 W Chip Resistors (0805) 1.0 kW, 1/8 W Chip Resistor (0805) 0.697″ x 0.087″ Microstrip 0.087″ x 0.197″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 PCB 0.819″ x 0.087″ Microstrip 0.181″ x 0.144″ Microstrip 0.383″ x 1.148″ Microstrip 0.400″ x 1.380″ Microstrip 0.351″ x 0.351″ Microstrip 0.126″ x 0.087″ Microstrip 1.280″ x 0.087″ Microstrip ≈1.275″ x 0.055″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 Figure 1. MRF18090A 1.80 - 1.88 GHz Test Fixture Schematic C1 VBIAS C2 R2 R1 R3 CUT OUT AREA C5 C6 C8 VSUPPLY C7 C4 C3 Ground (bias) MRF18090A Rev 4 Ground (supply) Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF18090A 1.80 - 1.88 GHz Test Fixture Component Layout MRF18090AR3 RF Device Data Freescale Semiconductor 3 T1 C1 C2 R3 T2 R4 C8 C9 C10 MRF18090A Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. 1.80 - 1.88 GHz Demo Board Component Layout MRF18090AR3 4 RF Device Data Freescale Semiconductor ÎÎ Î Î Î ÎÎÎ ÎÎÎ Î ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ Î Î ÎÎ Î ÎÎÎ Î ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ T1 C1, C3 C2 C4 C5 C6, C7 C8, C9, C10 R1 R2, R3 R4 R1 R2 R6 C5 R5 + VSUPPLY C3 C6 C4 C7 RF INPUT C9 Z1 C8 C10 Z4 Z2 Z3 RF OUTPUT 1 mF Chip Capacitors (0805) 0.1 mF Chip Capacitor (0805) 1 nF Chip Capacitor (0805) 220 mF, 50 V Electrolytic Capacitor 8.2 pF, 100A Chip Capacitors 22 pF, 100A Chip Capacitors 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 2.2 kΩ Chip Resistor (0805) R5 10 kΩ Chip Resistor (0603) R6 5 kΩ, SMD Potentiometer T1 LP2951 Micro - 8 Voltage Regulator T2 BC847 SOT - 23 NPN Transistor Z1 0.210″ x 0.055″ Microstrip Z2 0.419″ x 0.787″ Microstrip Z3 0.836″ x 0.512″ Microstrip Z4 0.164″ x 0.055″ Microstrip Substrate = 0.5 mm Teflon® Glass Figure 3. 1.80 - 1.88 GHz Demo Board Schematic VSUPPLY Ground C1 R1 T 1 R2 R3 C2 C5 R4 T2 R6 C4 R5 C3 C6 C7 MRF18090A TYPICAL CHARACTERISTICS 16 Pout , OUTPUT POWER (WATTS) 15 G ps, POWER GAIN (dB) 14 13 12 300 mA 11 10 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) 100 VDD = 26 Vdc f = 1880 MHz 500 mA IDQ = 1000 mA 750 mA 120 100 80 60 40 1W 20 0 12 14 16 22 26 18 20 24 VDD, SUPPLY VOLTAGE (VOLTS) 28 30 32 2W IDQ = 750 mA f = 1880 MHz Pin = 3.65 W Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Supply Voltage 100 90 Pout , OUTPUT POWER (WATTS) 80 70 60 50 40 30 20 10 0 1.795 1.815 1.835 1.855 f, FREQUENCY (GHz) 1.875 1.895 1W VDD = 26 Vdc IDQ = 750 mA 2W Pout , OUTPUT POWER (WATTS) Pin = 3.65 W 120 100 80 Pout 60 40 20 0 0 1 2 3 Pin, INPUT POWER (WATTS) 4 5 VDD = 26 Vdc IDQ = 750 mA f = 1880 MHz 60 50 40 30 20 10 0 h Figure 7. Output Power versus Frequency Figure 8. Output Power and Efficiency versus Input Power 0 15 Gps 12 −10 −15 IRL 9 VDD = 26 Vdc IDQ = 750 mA 6 1.75 1.80 1.85 f, FREQUENCY (GHz) 1.90 1.95 −20 −25 −30 Figure 9. Wideband Gain and IRL (at Small Signal) IRL, INPUT RETURN LOSS (dB) −5 G ps, POWER GAIN (dB) MRF18090AR3 RF Device Data Freescale Semiconductor 5 η, DRAIN EFFICIENCY (%) f = 1805 MHz Zload Zo = 10 Ω f = 1990 MHz f = 1990 MHz f = 1805 MHz Zsource VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (CW) f MHz 1805 1880 1930 1990 Zsource Ω 1.10 - j5.85 1.56 - j6.75 2.05 - j8.00 2.30 - j7.30 Zload Ω 1.15 - j2.16 1.13 - j2.60 1.30 - j2.23 0.82 - j2.90 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Large Signal Source and Load Impedance MRF18090AR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M (FLANGE) 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M R M bbb ccc H C E A (FLANGE) M (LID) M (INSULATOR) M ccc (INSULATOR) M TA M B S TA TA M B B M N M M M aaa (LID) M TA M B F DIM A B C D E F G H K M N Q R S aaa bbb ccc T A SEATING PLANE CASE 465B - 03 ISSUE D NI - 880 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF18090AR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF18090AR3 8Rev. 7, 5/2006 Document Number: MRF18090A RF Device Data Freescale Semiconductor