MRF18090AR3

Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications. • GSM and GSM EDGE Performances @ 1805 MHz Power Gain — 13.5 dB (Typ) @ 90 Watts CW Efficiency — 52% (Typ) @ 90 Watts CW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1805--1880 MHz, 90 W, 26 V LATERAL N--CHANNEL RF POWER MOSFET CASE 465B--03, STYLE 1 NI--880 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 W W/°C Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.7 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFET Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor Class 2 (Minimum) M3 (Minimum) MRF18090AR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.7 4.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.1 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 7.2 — S Crss — 4.2 — pF Common--Source Amplifier Power Gain @ 90 W (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 MHz) Gps 12.0 13.5 — dB Drain Efficiency @ 90 W (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 MHz) η 47 52 — % IRL — — --10 dB Characteristic Off Characteristics Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture) Input Return Loss (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1805 MHz) ARCHIVE INFORMATION ARCHIVE INFORMATION On Characteristics MRF18090AR3 2 RF Device Data Freescale Semiconductor R1 + C5 R3 RF INPUT Z2 Z1 Z3 Z8 Z5 Z9 RF OUTPUT C7 DUT Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 PCB 10 mF, 35 V Tantalum Capacitor 10 pF, 100B Chip Capacitors 3.3 pF, 100B Chip Capacitor 6.8 pF, 100B Chip Capacitors 12 pF, 100B Chip Capacitor 220 mF, 63 V Electrolytic Capacitor 10 kΩ, 1/8 W Chip Resistors (0805) 1.0 kΩ, 1/8 W Chip Resistor (0805) 0.697″ x 0.087″ Microstrip 0.087″ x 0.197″ Microstrip 0.819″ x 0.087″ Microstrip 0.181″ x 0.144″ Microstrip 0.383″ x 1.148″ Microstrip 0.400″ x 1.380″ Microstrip 0.351″ x 0.351″ Microstrip 0.126″ x 0.087″ Microstrip 1.280″ x 0.087″ Microstrip ≈1.275″ x 0.055″ Microstrip Taconic TLX8--0300, 0.030″, εr = 2.55 Figure 1. MRF18090A 1805 -- 1880 MHz Test Fixture Schematic C1 C6 VBIAS C2 R1 R2 VSUPPLY C8 C5 R3 C4 C3 CUT OUT AREA ARCHIVE INFORMATION C1 C2, C3 C4 C5, C6 C7 C8 R1, R2 R3 Z1 Z2 Z4 Z7 Z6 C3 C4 C8 Z10 C2 R2 C1 C6 VSUPPLY C7 MRF18090A Rev 4 Ground (bias) Ground (supply) ARCHIVE INFORMATION VBIAS + Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF18090A 1805 -- 1880 MHz Test Fixture Component Layout MRF18090AR3 RF Device Data Freescale Semiconductor 3 T1 R1 R6 R2 C5 R5 R3 VSUPPLY + C3 C6 T2 ARCHIVE INFORMATION R4 C4 RF INPUT C9 Z1 Z3 Z2 C8 C1, C3 C2 C4 C5 C6, C7 C8, C9, C10 R1 R2, R3 R4 C7 Z4 C10 R5 10 kΩ Chip Resistor (0603) R6 5 kΩ, SMD Potentiometer T1 LP2951 Micro--8 Voltage Regulator T2 BC847 SOT--23 NPN Transistor Z1 0.210″ x 0.055″ Microstrip Z2 0.419″ x 0.787″ Microstrip Z3 0.836″ x 0.512″ Microstrip Z4 0.164″ x 0.055″ Microstrip Substrate = 0.5 mm Teflon® Glass 1 mF Chip Capacitors (0805) 0.1 mF Chip Capacitor (0805) 1 nF Chip Capacitor (0805) 220 mF, 50 V Electrolytic Capacitor 8.2 pF, 100A Chip Capacitors 22 pF, 100A Chip Capacitors 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 2.2 kΩ Chip Resistor (0805) Figure 3. 1805 -- 1880 MHz Demo Board Schematic VSUPPLY C1 R1 T 1 R2 R3 Ground C2 C5 R4 T2 C6 C7 C4 MRF18090A C8 R5 C3 R6 RF OUTPUT ARCHIVE INFORMATION T1 C2 C1 C9 C10 MRF18090A Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. 1805 -- 1880 MHz Demo Board Component Layout MRF18090AR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 120 12 300 mA 10 1.0 Pout, OUTPUT POWER (WATTS) 0.1 40 0 100 12 14 16 20 24 18 22 26 VDD, SUPPLY VOLTAGE (VOLTS) 28 120 90 Pout , OUTPUT POWER (WATTS) Pin = 3.65 W 80 70 2W 60 50 40 VDD = 26 Vdc IDQ = 750 mA 1W 30 20 1.795 1.815 1.855 1.835 f, FREQUENCY (GHz) 1.875 1.895 Figure 7. Output Power versus Frequency 60 100 50 η 80 40 Pout 60 20 VDD = 26 Vdc IDQ = 750 mA f = 1880 MHz 20 0 0 1 2 3 Pin, INPUT POWER (WATTS) G ps, POWER GAIN (dB) Gps --5 --10 12 --15 IRL 9 --20 VDD = 26 Vdc IDQ = 750 mA 1.80 4 1.85 f, FREQUENCY (GHz) --25 1.90 1.95 10 5 Figure 8. Output Power and Efficiency versus Input Power 0 1.75 30 40 15 6 32 30 Figure 6. Output Power versus Supply Voltage 100 Pout , OUTPUT POWER (WATTS) 1W 20 Figure 5. Power Gain versus Output Power 10 0 2W 60 0 η, DRAIN EFFICIENCY (%) 10 VDD = 26 Vdc f = 1880 MHz Pin = 3.65 W 80 ARCHIVE INFORMATION 500 mA 13 IDQ = 750 mA f = 1880 MHz 100 IRL, INPUT RETURN LOSS (dB) G ps, POWER GAIN (dB) 750 mA 14 11 ARCHIVE INFORMATION Pout , OUTPUT POWER (WATTS) IDQ = 1000 mA 15 --30 Figure 9. Wideband Gain and IRL (at Small Signal) MRF18090AR3 RF Device Data Freescale Semiconductor 5 f = 1805 MHz Zload ARCHIVE INFORMATION f = 1990 MHz f = 1990 MHz f = 1805 MHz Zsource VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (CW) f MHz Zsource Ω Zload Ω 1805 1.10 -- j5.85 1.15 -- j2.16 1880 1.56 -- j6.75 1.13 -- j2.60 1930 2.05 -- j8.00 1.30 -- j2.23 1990 2.30 -- j7.30 0.82 -- j2.90 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source ARCHIVE INFORMATION Zo = 10 Ω Z load Figure 10. Large Signal Source and Load Impedance MRF18090AR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS G 4 2X 1 Q bbb M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. M B (FLANGE) 3 K 2 bbb M D T A M B M R ARCHIVE INFORMATION M bbb M T A M B M N ccc M T A M B (INSULATOR) ccc M T A M aaa M T A M S M F T A (INSULATOR) M C A B M (LID) H E B (LID) DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE (FLANGE) CASE 465B--03 ISSUE D NI--880 MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF ARCHIVE INFORMATION B MRF18090AR3 RF Device Data Freescale Semiconductor 7 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 8 Oct. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 Dec. 2010 • Data sheet archived. Part no longer manufactured. ARCHIVE INFORMATION ARCHIVE INFORMATION • Added Product Documentation and Revision History, p. 8 MRF18090AR3 8 RF Device Data Freescale Semiconductor How to Reach Us: Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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ARCHIVE INFORMATION ARCHIVE INFORMATION Home Page: www.freescale.com Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. MRF18090AR3 Document Number: RF Device Data MRF18090A Rev. 8, 10/2008 Freescale Semiconductor 9