MRF5S19060MR1

Freescale Semiconductor Technical Data Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. Document Number: MRF5S19060M Rev. 5, 5/2006 RF Power Field Effect Transistors MRF5S19060MR1 MRF5S19060MBR1 1990 MHz, 12 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment. • Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 23% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg. Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. ARCHIVE INFORMATION CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S19060MR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S19060MBR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 218.8 1.25 - 65 to +175 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 12 W CW Symbol RθJC Value (1) 0.80 Unit °C/W 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S19060MR1 MRF5S19060MBR1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) C (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 225 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 750 mAdc) Drain - Source On - Voltage (VGS = 5 Vdc, ID = 2.25 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2.25 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) gfs 2.5 — — — — 3.8 0.26 5 3.5 — — — Vdc Vdc Vdc S Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit μAdc μAdc μAdc ARCHIVE INFORMATION Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz., 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 12.5 21 — — — 14 23 - 37 - 51 - 12 16 — - 35 - 48 -9 dB % dBc dBc dB (continued) MRF5S19060MR1 MRF5S19060MBR1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Typical RF Performance (50 ohm system) Pulse Peak Power (VDD = 28 Vdc, 1 - Tone CW Pulsed, IDQ = 750 mA, tON = 8 μs, 1% Duty Cycle) Video Bandwidth (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 750 mA, Tone Spacing = 1 MHz to VBW, Δ IM3