Document Number: MRF6S19060N
Rev. 5, 12/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
LIFETIME BUY
Designed for N--CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 610 mA,
Pout = 12 Watts Avg., f = 1930 MHz, IS--95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — --37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — --51 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 225_C Capable Plastic Package
• N Suffix Indicates Lead--Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
MRF6S19060NR1
MRF6S19060NBR1
1930--1990 MHz, 12 W AVG., 28 V
2 x N--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6S19060NR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6S19060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 60 W CW
Case Temperature 79°C, 12 W CW
RθJC
0.84
1.0
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2005--2006, 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
°C/W
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Freescale Semiconductor
Technical Data
MRF6S19060NR1 MRF6S19060NBR1
1
Table 3. ESD Protection Characteristics
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1.5
2.2
2.5
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 610 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
0.2
0.3
0.4
Vdc
Crss
—
1.5
—
pF
Characteristic
LIFETIME BUY
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 12 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz, 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @
±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
14.5
16
18.5
dB
Drain Efficiency
ηD
24.5
26
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
ACPR
—
--51
--48
dBc
IRL
—
--12
--10
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Test Methodology
MRF6S19060NR1 MRF6S19060NBR1
2
RF Device Data
Freescale Semiconductor
R1
VSUPPLY
R2
C6
C1
C2
C3
Z6
C4
C5
Z17
RF
INPUT
R3
Z1
Z2
Z3
Z4
Z5
Z8
Z9
Z10
Z13
Z14
Z15
RF
OUTPUT
C8
Z16
DUT
VSUPPLY
C9
LIFETIME BUY
Z12
Z7
C7
Z1
Z2
Z3
Z4
Z5
Z6
Z7, Z8
Z9
Z10
Z11
0.250″ x 0.083″ Microstrip
0.750″ x 0.083″ Microstrip
0.375″ x 0.425″ Microstrip
0.370″ x 0.083″ Microstrip
0.365″ x 1.000″ Microstrip
0.650″ x 0.080″ Microstrip
0.115″ x 1.000″ Microstrip
0.240″ x 1.000″ Microstrip
0.310″ x 0.315″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
C10
C11
0.225″ x 0.083″ Microstrip
0.325″ x 0.500″ Microstrip
0.450″ x 0.083″ Microstrip
0.300″ x 0.245″ Microstrip
0.195″ x 0.083″ Microstrip
1.150″ x 0.070″ Microstrip
1.150″ x 0.083″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55
Figure 1. MRF6S19060NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S19060NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
CDR33BX104AKYS
Kemet
C2, C3, C7, C8, C9
6.8 pF Chip Capacitors
ATC100B6R8BT250XT
ATC
C4, C5, C6, C10, C11
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
VBIAS
MRF6S19060NR1 MRF6S19060NBR1
RF Device Data
Freescale Semiconductor
3
C4
R2
C6
C1
C2
C5
C3
R3
C8
CUT OUT AREA
C7
LIFETIME BUY
C9
C10 C11
MRF6S19060N/NB Rev. 2
Figure 2. MRF6S19060NR1(NBR1) Test Circuit Component Layout
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
R1
MRF6S19060NR1 MRF6S19060NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16.2
16.1
IRL
IM3
25
--30
--36
--42
15.8
15.7
25.5
--48
--54
ACPR
--60
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
--10
--14
--18
--22
--26
--30
Figure 3. 2--Carrier N--CDMA Broadband Performance @ Pout = 12 Watts Avg.
VDD = 28 Vdc, Pout = 24 W (Avg.)
IDQ = 610 mA, 2--Carrier N--CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
15.8
15.7
IRL
15.6
IM3
37
36.5
--20
--25
--30
15.4
15.3
--35
ACPR
--40
--45
15.2
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
--10
--14
--18
--22
--26
--30
f, FREQUENCY (MHz)
Figure 4. 2--Carrier N--CDMA Broadband Performance @ Pout = 24 Watts Avg.
18
--10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 915 mA
17
Gps, POWER GAIN (dB)
37.5
15.9
15.5
38
ηD
IRL, INPUT RETURN LOSS (dB)
16
ηD, DRAIN
EFFICIENCY (%)
16.1
38.5
Gps
IM3 (dBc), ACPR (dBc)
16.2
Gps, POWER GAIN (dB)
LIFETIME BUY
f, FREQUENCY (MHz)
763 mA
610 mA
16
458 mA
15
305 mA
14
13
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
12
1
10
100
200
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
--20
IDQ = 305 mA
915 mA
--30
--40
--50
--60
458 mA
1
763 mA
610 mA
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
VDD = 28 Vdc, Pout = 12 W (Avg.)
IDQ = 610 mA, 2--Carrier N--CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
26
16.3
15.9
26.5
ηD
16.4
ηD, DRAIN
EFFICIENCY (%)
16.5
16
27
Gps
IM3 (dBc), ACPR (dBc)
16.6
MRF6S19060NR1 MRF6S19060NBR1
RF Device Data
Freescale Semiconductor
5
--10
Pout, OUTPUT POWER (dBm)
--30
3rd Order
--40
5th Order
--50
7th Order
--60
0.1
P3dB = 49.503 dBm (89.19 W)
51
P1dB = 48.792 dBm (75.72 W)
49
1
45
43
VDD = 28 Vdc, IDQ = 610 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
39
23
100
10
Actual
47
41
25
27
29
31
35
33
37
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
60
VDD = 28 Vdc, IDQ = 610 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
50 2--Carrier N--CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel Bandwidth
40 PAR = 9.8 dB @ 0.01% Probability (CCDF)
30
25_C
--30_C
25_C
85_C --20
--30_C
85_C 25_C --30
ηD
--30_C
ACPR
IM3
20
TC = --30_C
Gps
10
85_C
0
--40
--50
--60
25_C
10
1
--10
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TWO--TONE SPACING (MHz)
--70
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2--Carrier N--CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
70
TC = --30_C
60
50
17
25_C
16
85_C
15
ηD
Gps
85_C
40
30
20
14
VDD = 28 Vdc
IDQ = 610 mA
f = 1960 MHz
13
12
1
10
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
10
0
100
IDQ = 610 mA
f = 1960 MHz
16
Gps, POWER GAIN (dB)
--30_C
18
ηD, DRAIN EFFICIENCY (%)
19
Gps, POWER GAIN (dB)
Ideal
53
15
14
13
VDD = 24 V
28 V
32 V
12
0
20
40
60
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
--20
LIFETIME BUY
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
80
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
100
MRF6S19060NR1 MRF6S19060NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
107
106
105
90
110
130
150
170
190
210
230
250
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 12 W Avg., and ηD = 26%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
N--CDMA TEST SIGNAL
100
0
1.2288 MHz
Channel BW
--10
10
--20
1
--IM3 in
1.2288 MHz
Integrated BW
--30
+IM3 in
1.2288 MHz
Integrated BW
--40
0.1
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
LIFETIME BUY
TJ, JUNCTION TEMPERATURE (°C)
--60
--70
2
4
6
--ACPR in 30 kHz
Integrated BW
--80
0.0001
0
--50
8
PEAK--TO--AVERAGE (dB)
Figure 13. 2--Carrier CCDF N--CDMA
10
+ACPR in 30 kHz
Integrated BW
--90
--100
--7.5
--6
--4.5
--3
--1.5
0
1.5
3
4.5
6
f, FREQUENCY (MHz)
Figure 14. 2--Carrier N--CDMA Spectrum
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
MTTF (HOURS)
108
7.5
MRF6S19060NR1 MRF6S19060NBR1
RF Device Data
Freescale Semiconductor
7
Zload
LIFETIME BUY
f = 1990 MHz
f = 1930 MHz
f = 1990 MHz
f = 1930 MHz
Zsource
VDD = 28 Vdc, IDQ = 610 mA, Pout = 12 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
4.54 -- j7.95
4.15 -- j5.58
1960
4.33 -- j7.74
4.17 -- j5.34
1990
4.20 -- j7.43
4.22 -- j5.10
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Zo = 10 Ω
MRF6S19060NR1 MRF6S19060NBR1
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF6S19060NR1 MRF6S19060NBR1
RF Device Data
Freescale Semiconductor
9
MRF6S19060NR1 MRF6S19060NBR1
10
RF Device Data
Freescale Semiconductor
MRF6S19060NR1 MRF6S19060NBR1
RF Device Data
Freescale Semiconductor
11
MRF6S19060NR1 MRF6S19060NBR1
12
RF Device Data
Freescale Semiconductor
MRF6S19060NR1 MRF6S19060NBR1
RF Device Data
Freescale Semiconductor
13
MRF6S19060NR1 MRF6S19060NBR1
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Date
4
Dec. 2008
LIFETIME BUY
Revision
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for
standardization across products, p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 220°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4
on Sheet 1.
• Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
• Added Product Documentation and Revision History, p. 15
5
Dec. 2010
• Corrected data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, and Product Discontinuance Notification number, PCN14260, adding applicable
overlay, p. 1, 2
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
MRF6S19060NR1 MRF6S19060NBR1
RF Device Data
Freescale Semiconductor
15
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MRF6S19060NR1 MRF6S19060NBR1
Document Number: MRF6S19060N
Rev. 5, 12/2010
16
RF Device Data
Freescale Semiconductor
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