MRF6S21060NR1

Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio, WLL and TD-SCDMA applications. • Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 225_C Capable Plastic Package • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S21060NR1 MRF6S21060NBR1 2110-2170 MHz, 14 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC MRF6S21060NR1 CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC MRF6S21060NBR1 Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value -0.5, +68 -0.5, +12 -65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79°C, 60 W CW Case Temperature 76°C, 14 W CW Symbol RθJC 0.89 1.04 Value (2,3) Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved. MRF6S21060NR1 MRF6S21060NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 610 mAdc, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.0 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) 1.5 2 — 2.2 2.8 0.3 2.5 4 — Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg., f1 = 2115.5 MHz, f2 = 2122.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 13.5 24.5 — — — 15.5 26 -37 -40 -14 16.5 — -35 -38 -10 dB % dBc dBc dB MRF6S21060NR1 MRF6S21060NBR1 2 RF Device Data Freescale Semiconductor R1 VBIAS R2 C6 C1 C2 Z6 Z15 RF INPUT R3 Z1 C7 Z2 Z3 Z4 Z5 Z7 Z16 DUT VSUPPLY C9 C10 C11 Z8 Z9 Z10 Z11 Z12 Z13 C8 Z14 C3 C4 C5 RF OUTPUT VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.250″ x 0.080″ Microstrip 0.860″ x 0.080″ Microstrip 0.300″ x 0.405″ Microstrip 0.350″ x 0.080″ Microstrip 0.350″ x 0.755″ Microstrip 0.680″ x 0.080″ Microstrip 0.115″ x 0.755″ Microstrip 0.115″ x 1.000″ Microstrip 0.240″ x 1.000″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.270″ x 0.300″ Microstrip 0.230″ x 0.080″ Microstrip 0.310″ x 0.300″ Microstrip 0.830″ x 0.080″ Microstrip 0.200″ x 0.080″ Microstrip 1.000″ x 0.080″ Microstrip 1.100″ x 0.070″ Microstrip Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55 Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values Part C1 C2, C7 C3, C8, C9 C4, C5, C6, C10, C11 R1 R2 R3 Description 100 nF Chip Capacitor 4.7 pF Chip Capacitors 6.8 pF Chip Capacitors 10 μF, 35 V Chip Capacitors 1 kW, 1/4 W Chip Resistor 10 kW, 1/4 W Chip Resistor 10 W, 1/4 W Chip Resistor Part Number CDR33BX104AKYS ATC100B4R7BT500XT ATC100B6R8BT500XT GRM55DR61H106KA88L CRCW12061001FKEA CRCW12061002FKEA CRCW120610R0FKEA Manufacturer Kemet ATC ATC Murata Vishay Vishay Vishay MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 3 R1 C4 R2 C6 C1 C2 R3 C3 C5 CUT OUT AREA C7 C8 C9 C10 C11 MRF6S21060N Rev. 3 Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component Layout MRF6S21060NR1 MRF6S21060NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 15.8 15.6 Gps, POWER GAIN (dB) 15.4 15.2 15 14.8 14.6 14.4 14.2 14 2060 2080 2100 IRL 2120 2140 ACPR 2160 2180 2200 VDD = 28 Vdc, Pout = 14 W (Avg.) IDQ = 610 mA, 2-Carrier W-CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 ηD 28 27 26 Gps 25 24 -36 -38 -40 -42 -44 -46 2220 IM3 (dBc), ACPR (dBc) -5 -10 -15 -20 -25 ηD, DRAIN EFFICIENCY (%) f, FREQUENCY (MHz) Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 14 Watts Avg. 15.6 15.4 15.2 Gps, POWER GAIN (dB) 15 14.8 14.6 IM3 14.4 14.2 14 2060 2080 2100 2120 2140 IRL ACPR 2160 2180 2200 VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 610 mA, 2-Carrier W-CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 39 ηD 38 37 36 -26 IM3 (dBc), ACPR (dBc) -28 -30 -32 -34 2220 ηD, DRAIN EFFICIENCY (%) Gps -6 -9 -12 -15 -18 -21 -24 f, FREQUENCY (MHz) Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 28 Watts Avg. 17 16 Gps, POWER GAIN (dB) 15 458 mA 14 305 mA 13 12 11 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 763 mA 610 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 915 mA -1 0 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -2 0 IDQ = 305 mA -3 0 915 mA -4 0 -5 0 458 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 763 mA 610 mA Figure 5. Two-T one Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS -1 0 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 57 55 Pout, OUTPUT POWER (dBm) 53 51 49 47 45 -60 0.1 1 TWO-T ONE SPACING (MHz) 10 100 43 28 30 32 34 36 38 40 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 610 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz P3dB = 49.986 dBm (99.68 W) P1dB = 49.252 dBm (84.18 W) Actual Ideal -2 0 -3 0 3rd Order -4 0 5th Order 7th Order -5 0 Figure 7. Intermodulation Distortion Products versus Tone Spacing 60 50 40 30 20 10 0 1 10 Gps Figure 8. Pulsed CW Output Power versus Input Power 0 TC = -30_C ηD IM3 -30 _C ACPR -30 _C 85_C -40 25_C -50 -60 100 200 25_C 85_C -10 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQ = 610 mA f1 = 2135 MHz, f2 = 2145 MHz 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 25_C -20 -30 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 TC = -30_C 16 Gps, POWER GAIN (dB) 25_C 15 14 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW 100 200 VDD = 28 Vdc IDQ = 610 mA f = 2140 MHz 85_C ηD Gps 70 -30 _C 60 Gps, POWER GAIN (dB) 25_C 50 85_C 40 30 20 10 0 ηD, DRAIN EFFICIENCY (%) 16 15 14 13 12 VDD = 24 V 11 10 0 20 40 60 80 100 120 Pout, OUTPUT POWER (WATTS) CW 32 V IDQ = 610 mA f = 2140 MHz 28 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power MRF6S21060NR1 MRF6S21060NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 26%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF Factor versus Junction Temperature W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-T O-A VERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF +20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25 3.84 MHz Channel BW -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW +IM3 in 3.84 MHz BW -2 0 -15 -10 -5 0 5 10 15 20 25 f, FREQUENCY (MHz) Figure 13. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single-Carrier Test Signal Figure 14. 2‐Carrier W‐CDMA Spectrum MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 7 Zo = 10 Ω Zload f = 2110 MHz f = 2170 MHz f = 2110 MHz Zsource f = 2170 MHz VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg. f MHz 2110 2140 2170 Zsource Ω 7.59 - j8.39 6.71 - j8.83 5.84 - j8.62 Zload Ω 3.31 - j5.35 3.17 - j5.16 3.06 - j4.92 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21060NR1 MRF6S21060NBR1 8 RF Device Data Freescale Semiconductor TD-SCDMA CHARACTERIZATION R1 VBIAS R2 C6 C1 C2 Z9 Z17 RF INPUT R3 Z1 C7 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z18 DUT VSUPPLY C9 C10 C11 Z10 Z11 Z12 Z13 Z14 Z15 C8 Z16 C3 C4 C5 RF OUTPUT VSUPPLY Z1 Z2 Z3* Z4 Z5* Z6 Z7 Z8 Z9 Z10 0.250″ x 0.080″ Microstrip 0.129″ x 0.080″ Microstrip 0.565″ x 0.258″ Microstrip 0.160″ x 0.080″ Microstrip 0.300″ x 0.455″ Microstrip 0.350″ x 0.080″ Microstrip 0.350″ x 0.755″ Microstrip 0.115″ x 0.755″ Microstrip 0.680″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z11 Z12* Z13 Z14* Z15 Z16 Z17 Z18 PCB 0.240″ x 1.000″ Microstrip 0.270″ x 0.360″ Microstrip 0.230″ x 0.080″ Microstrip 0.588″ x 0.290″ Microstrip 0.595″ x 0.080″ Microstrip 0.200″ x 0.080″ Microstrip 0.935″ x 0.080″ Microstrip 0.955″ x 0.080″ Microstrip Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55 * Copper foil tape soldered onto PCB Figure 16. MRF6S21060NR1(NBR1) Test Circuit Schematic — TD-SCDMA Table 7. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values — TD-SCDMA Part C1 C2, C7 C3, C8, C9 C4, C5, C6, C10, C11 R1 R2 R3 Description 100 nF Chip Capacitor 4.7 pF Chip Capacitors 6.8 pF Chip Capacitors 10 μF, 35 V Chip Capacitors 1 kW, 1/4 W Chip Resistor 10 kW, 1/4 W Chip Resistor 10 W, 1/4 W Chip Resistor Part Number CDR33BX104AKYS ATC100B4R7BT500XT ATC100B6R8BT500XT GRM55DR61H106KA88L CRCW12061001FKEA CRCW12061002FKEA CRCW120610R0FKEA Manufacturer Kemet ATC ATC Murata Vishay Vishay Vishay MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 9 R1 C4 R2 C6 C1 C2 R3 CUT OUT AREA C3 C5 C7 C8 C9 C10 C11 MRF6S21060N Rev. 3 Figure 17. MRF6S21060NR1(NBR1) Test Circuit Component Layout — TD-SCDMA MRF6S21060NR1 MRF6S21060NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 0 -1 0 ALT/ACPR (dBc) -2 0 -3 0 -4 0 -5 0 Alt-U -60 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) AVG. 0 Alt-L 3-Carrier TD-SCDMA VDD = 28 V, IDQ = 555 mA f = 2017.5 MHz ηD Adj-U Adj-L 30 25 20 15 10 5 ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) 1.28 MHz Channel BW Figure 18. 3-Carrier TD-SCDMA ACPR, ALT and Drain Efficiency versus Output Power -1 8 6-Carrier TD-SCDMA VDD = 28 V, IDQ = 560 mA f = 2017.5 MHz 25 -2 6 ALT/ACPR (dBc) ηD 20 -3 4 Adj-U Adj-L -4 2 Alt-L -5 0 Alt-U -58 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 Pout, OUTPUT POWER (WATTS) AVG. 15 10 5 0 Figure 19. 6-Carrier TD-SCDMA ACPR, ALT and Drain Efficiency versus Output Power TD-SCDMA TEST SIGNAL -30 -40 -50 -60 -70 -80 -90 -100 -1 10 -120 -130 Center 2.0175 GHz 1.5 MHz f, FREQUENCY (MHz) Span 15 MHz -AL T1 in 1.28 MHz BW -1.6 MHz Offset +ALT1 in 1.28 MHz BW +1.6 MHz Offset -AL T2 in 1.28 MHz BW -3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset (dBm) (dBm) 1.28 MHz Channel BW -30 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz -40 -50 -60 -70 -80 -90 -100 -1 10 -120 -130 -AL T1 in 1.28 MHz BW -1.6 MHz Offset Center 2.0175 GHz 2.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 25 MHz -AL T2 in 1.28 MHz BW -3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz Figure 20. 3-Carrier TD-SCDMA Spectrum Figure 21. 6-Carrier TD-SCDMA Spectrum MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 11 Zo = 10 Ω Zload f = 2070 MHz f = 1950 MHz f = 2070 MHz Zin f = 1950 MHz VDD = 28 Vdc, IDQ = 560 mA f MHz 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 2050 2060 2070 Zin Zin W 2.227 - j9.127 2.168 - j8.942 2.124 - j8.757 2.073 - j8.606 2.031 - j8.447 1.987 - j8.306 1.940 - j8.155 1.911 - j8.000 1.891 - j7.835 1.856 - j7.711 1.831 - j7.589 1.808 - j7.461 1.782 - j7.325 Zload W 3.341 - j8.372 3.239 - j8.218 3.168 - j8.084 3.083 - j7.966 3.009 - j7.865 2.929 - j7.743 2.845 - j7.639 2.775 - j7.529 2.696 - j7.410 2.615 - j7.309 2.549 - j7.207 2.479 - j7.086 2.422 - j6.983 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z in Z load Figure 22. Series Equivalent Input and Load Impedance — TD-SCDMA MRF6S21060NR1 MRF6S21060NBR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 13 MRF6S21060NR1 MRF6S21060NBR1 14 RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 15 MRF6S21060NR1 MRF6S21060NBR1 16 RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 17 MRF6S21060NR1 MRF6S21060NBR1 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 4 Date Dec. 2006 Description • Added “TD-SCDMA” to data sheet description, p. 1 • Updated Part Numbers in Table 7, Component Designations and Values, to RoHS compliant part numbers, p. 4 • Added TD-SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 9-12 • Added Product Documentation and Revision History, p. 17 5 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 220°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Updated PCB information to show more specific material details, Figs. 1, 16, Test Circuit Schematic, p. 3, 9 • Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant part numbers, p. 3, 9 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Replaced Case Outline 1486-03, Issue C, with 1486-03, Issue D, p. 13-15. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 16-18. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2006, 2008. All rights reserved. MRF6S21060NR1 MRF6S21060NBR1 Document Number: MRF6S21060N 2Rev. 5, 12/2008 0 RF Device Data Freescale Semiconductor