MRF6S21060MR1

Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs LIFETIME BUY Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio, WLL and TD--SCDMA applications. • Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 225_C Capable Plastic Package • N Suffix Indicates Lead--Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S21060NR1 MRF6S21060NBR1 2110--2170 MHz, 14 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6S21060NR1 CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6S21060NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79°C, 60 W CW Case Temperature 76°C, 14 W CW RθJC 0.89 1.04 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2005--2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor °C/W LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data MRF6S21060NR1 MRF6S21060NBR1 1 Table 3. ESD Protection Characteristics Class Human Body Model (per JESD22--A114) 1B (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 1.5 2.2 2.5 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 610 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) — 0.3 — Vdc Crss — 1.5 — pF Characteristic LIFETIME BUY Off Characteristics On Characteristics (DC) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg., f1 = 2115.5 MHz, f2 = 2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13.5 15.5 16.5 dB Drain Efficiency ηD 24.5 26 — % Intermodulation Distortion IM3 — --37 --35 dBc ACPR — --40 --38 dBc IRL — --14 --10 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Test Methodology MRF6S21060NR1 MRF6S21060NBR1 2 RF Device Data Freescale Semiconductor R1 VSUPPLY R2 C6 C1 C2 C3 Z6 C4 C5 Z15 RF INPUT R3 Z1 Z2 Z3 Z4 Z5 Z8 Z9 Z10 Z13 Z14 RF OUTPUT C8 Z16 DUT VSUPPLY C9 LIFETIME BUY Z12 Z7 C7 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z11 0.250″ x 0.080″ Microstrip 0.860″ x 0.080″ Microstrip 0.300″ x 0.405″ Microstrip 0.350″ x 0.080″ Microstrip 0.350″ x 0.755″ Microstrip 0.680″ x 0.080″ Microstrip 0.115″ x 0.755″ Microstrip 0.115″ x 1.000″ Microstrip 0.240″ x 1.000″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB C10 C11 0.270″ x 0.300″ Microstrip 0.230″ x 0.080″ Microstrip 0.310″ x 0.300″ Microstrip 0.830″ x 0.080″ Microstrip 0.200″ x 0.080″ Microstrip 1.000″ x 0.080″ Microstrip 1.100″ x 0.070″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 100 nF Chip Capacitor CDR33BX104AKYS Kemet C2, C7 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC C3, C8, C9 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C4, C5, C6, C10, C11 10 μF, 35 V Chip Capacitors GRM55DR61H106KA88L Murata R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 10 kΩ, 1/4 W Chip Resistor CRCW12061002FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 VBIAS MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 3 C4 R2 C6 C1 C2 C5 C3 CUT OUT AREA R3 LIFETIME BUY C7 C8 C9 C10 C11 MRF6S21060N Rev. 3 Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component Layout LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 R1 MRF6S21060NR1 MRF6S21060NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 15.4 15.2 15 27 26 VDD = 28 Vdc, Pout = 14 W (Avg.) IDQ = 610 mA, 2--Carrier W--CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 25 Gps 24 --36 IM3 14.8 --38 14.6 --40 14.4 --42 IRL 14.2 14 2060 2080 2100 ACPR 2120 2140 2160 --44 2180 2200 --46 2220 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 15.6 --5 --10 --15 --20 --25 Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout = 14 Watts Avg. 15.2 15 14.8 14.6 37 VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 610 mA, 2--Carrier W--CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 36 --26 --28 IM3 14.4 14.2 14 2060 2080 2100 2120 2140 38 IRL --30 ACPR --32 2160 2180 2200 --34 2220 --6 --9 --12 --15 --18 --21 --24 IRL, INPUT RETURN LOSS (dB) ηD ηD, DRAIN EFFICIENCY (%) 15.4 f, FREQUENCY (MHz) Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout = 28 Watts Avg. 17 --10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 915 mA 763 mA 16 Gps, POWER GAIN (dB) 39 Gps IM3 (dBc), ACPR (dBc) 15.6 Gps, POWER GAIN (dB) LIFETIME BUY f, FREQUENCY (MHz) IRL, INPUT RETURN LOSS (dB) ηD 15.8 610 mA 15 458 mA 14 305 mA 13 12 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing 11 1 10 100 200 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing --20 --30 IDQ = 305 mA 915 mA --40 --50 458 mA --60 1 763 mA 610 mA 10 100 200 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two--Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 28 ηD, DRAIN EFFICIENCY (%) 16 MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 5 --10 Pout, OUTPUT POWER (dBm) --30 55 3rd Order --40 5th Order 7th Order --50 53 P1dB = 49.252 dBm (84.18 W) 51 Actual 49 47 VDD = 28 Vdc, IDQ = 610 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 45 --60 0.1 1 43 28 100 10 30 32 34 36 40 38 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power 60 50 40 0 VDD = 28 Vdc, IDQ = 610 mA f1 = 2135 MHz, f2 = 2145 MHz 2--Carrier W--CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) TC = --30_C ηD 25_C 85_C IM3 25_C --20 --30_C 30 --30 ACPR 20 Gps --40 --30_C 25_C --50 85_C 10 0 10 1 --10 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TWO--TONE SPACING (MHz) 100 200 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2--Carrier W--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 85_C 12 40 30 ηD VDD = 28 Vdc IDQ = 610 mA f = 2140 MHz 20 11 10 1 10 100 200 IDQ = 610 mA f = 2140 MHz 15 Gps, POWER GAIN (dB) 25_C 50 85_C 15 14 --30_C 60 ηD, DRAIN EFFICIENCY (%) 25_C 13 16 70 Gps TC = --30_C 16 Gps, POWER GAIN (dB) Ideal P3dB = 49.986 dBm (99.68 W) 14 13 12 10 11 0 10 32 V 28 V VDD = 24 V 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 57 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz --20 LIFETIME BUY IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 120 MRF6S21060NR1 MRF6S21060NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 250 230 This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 26%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF Factor versus Junction Temperature W--CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 10 0 --10 1 (dB) PROBABILITY (%) LIFETIME BUY TJ, JUNCTION TEMPERATURE (°C) 0.1 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.01 --50 4 6 --70 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --80 --25 --20 --60 0.0001 2 --30 --40 0.001 0 --20 8 10 PEAK--TO--AVERAGE (dB) Figure 13. CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single--Carrier Test Signal --15 --10 --5 0 5 10 +IM3 in 3.84 MHz BW 15 20 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 109 25 MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 7 f = 2110 MHz Zload LIFETIME BUY f = 2110 MHz f = 2170 MHz f = 2170 MHz Zsource VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg. f MHz Zsource Ω Zload Ω 2110 7.59 -- j8.39 3.31 -- j5.35 2140 6.71 -- j8.83 3.17 -- j5.16 2170 5.84 -- j8.62 3.06 -- j4.92 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Zo = 10 Ω MRF6S21060NR1 MRF6S21060NBR1 8 RF Device Data Freescale Semiconductor R1 VBIAS VSUPPLY R2 C6 C1 C2 C3 Z9 C4 C5 Z17 RF INPUT R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z10 Z11 Z14 Z15 Z16 RF OUTPUT C8 Z18 DUT VSUPPLY C9 LIFETIME BUY Z13 Z8 C7 Z1 Z2 Z3* Z4 Z5* Z6 Z7 Z8 Z9 Z10 Z12 0.250″ x 0.080″ Microstrip 0.129″ x 0.080″ Microstrip 0.565″ x 0.258″ Microstrip 0.160″ x 0.080″ Microstrip 0.300″ x 0.455″ Microstrip 0.350″ x 0.080″ Microstrip 0.350″ x 0.755″ Microstrip 0.115″ x 0.755″ Microstrip 0.680″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z11 Z12* Z13 Z14* Z15 Z16 Z17 Z18 PCB C10 C11 0.240″ x 1.000″ Microstrip 0.270″ x 0.360″ Microstrip 0.230″ x 0.080″ Microstrip 0.588″ x 0.290″ Microstrip 0.595″ x 0.080″ Microstrip 0.200″ x 0.080″ Microstrip 0.935″ x 0.080″ Microstrip 0.955″ x 0.080″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 * Copper foil tape soldered onto PCB Figure 16. MRF6S21060NR1(NBR1) Test Circuit Schematic — TD--SCDMA Table 7. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values — TD--SCDMA Part Description Part Number Manufacturer C1 100 nF Chip Capacitor CDR33BX104AKYS Kemet C2, C7 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC C3, C8, C9 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C4, C5, C6, C10, C11 10 μF, 35 V Chip Capacitors GRM55DR61H106KA88L Murata R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 10 kΩ, 1/4 W Chip Resistor CRCW12061002FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 TD--SCDMA CHARACTERIZATION MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 9 C4 R2 C6 C1 C5 C3 C2 CUT OUT AREA R3 LIFETIME BUY C7 C8 C9 C10 C11 MRF6S21060N Rev. 3 Figure 17. MRF6S21060NR1(NBR1) Test Circuit Component Layout — TD--SCDMA LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 R1 MRF6S21060NR1 MRF6S21060NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 25 --20 20 ηD Adj--U --30 Adj--L 15 10 --40 Alt--L --50 5 Alt--U --60 0 0 1 3 2 4 5 6 7 9 8 Pout, OUTPUT POWER (WATTS) AVG. --18 25 6--Carrier TD--SCDMA VDD = 28 V, IDQ = 560 mA f = 2017.5 MHz ALT/ACPR (dBc) --26 --34 15 Adj--U Adj--L --42 10 Alt--L --50 5 Alt--U --58 0.5 0 1.5 2.5 3.5 4.5 5.5 6.5 7.5 Pout, OUTPUT POWER (WATTS) AVG. Figure 19. 6--Carrier TD--SCDMA ACPR, ALT and Drain Efficiency versus Output Power TD--SCDMA TEST SIGNAL --30 --30 1.28 MHz Channel BW --40 --50 --60 --80 --90 +ALT2 in 1.28 MHz BW +3.2 MHz Offset --ALT2 in 1.28 MHz BW --3.2 MHz Offset --100 --110 --120 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz --60 --70 (dBm) --70 1.28 MHz Channel BW --40 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz --50 (dBm) 20 ηD ηD, DRAIN EFFICIENCY (%) LIFETIME BUY Figure 18. 3--Carrier TD--SCDMA ACPR, ALT and Drain Efficiency versus Output Power --80 --90 --ALT2 in 1.28 MHz BW --3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset --100 +ALT1 in 1.28 MHz BW +1.6 MHz Offset --ALT1 in 1.28 MHz BW --1.6 MHz Offset --130 Center 2.0175 GHz 1.5 MHz Span 15 MHz f, FREQUENCY (MHz) Figure 20. 3--Carrier TD--SCDMA Spectrum --110 --120 --ALT1 in 1.28 MHz BW --1.6 MHz Offset --130 Center 2.0175 GHz +ALT1 in 1.28 MHz BW +1.6 MHz Offset 2.5 MHz Span 25 MHz LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 --10 ALT/ACPR (dBc) 30 3--Carrier TD--SCDMA VDD = 28 V, IDQ = 555 mA f = 2017.5 MHz ηD, DRAIN EFFICIENCY (%) 0 f, FREQUENCY (MHz) Figure 21. 6--Carrier TD--SCDMA Spectrum MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 11 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Zo = 10 Ω Zload f = 1950 MHz LIFETIME BUY f = 2070 MHz f = 2070 MHz f = 1950 MHz Zin VDD = 28 Vdc, IDQ = 560 mA Zin f MHz Zin Ω Zload Ω 1950 2.227 -- j9.127 3.341 -- j8.372 1960 2.168 -- j8.942 3.239 -- j8.218 1970 2.124 -- j8.757 3.168 -- j8.084 1980 2.073 -- j8.606 3.083 -- j7.966 1990 2.031 -- j8.447 3.009 -- j7.865 2000 1.987 -- j8.306 2.929 -- j7.743 2010 1.940 -- j8.155 2.845 -- j7.639 2020 1.911 -- j8.000 2.775 -- j7.529 2030 1.891 -- j7.835 2.696 -- j7.410 2040 1.856 -- j7.711 2.615 -- j7.309 2050 1.831 -- j7.589 2.549 -- j7.207 2060 1.808 -- j7.461 2.479 -- j7.086 2070 1.782 -- j7.325 2.422 -- j6.983 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Z in Z load Figure 22. Series Equivalent Input and Load Impedance — TD--SCDMA MRF6S21060NR1 MRF6S21060NBR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 13 MRF6S21060NR1 MRF6S21060NBR1 14 RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 15 MRF6S21060NR1 MRF6S21060NBR1 16 RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 17 MRF6S21060NR1 MRF6S21060NBR1 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Date 4 Dec. 2006 LIFETIME BUY Revision Description • Added “TD--SCDMA” to data sheet description, p. 1 • Updated Part Numbers in Table 7, Component Designations and Values, to RoHS compliant part numbers, p. 4 • Added TD--SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 9--12 • Added Product Documentation and Revision History, p. 17 5 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 220°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Updated PCB information to show more specific material details, Figs. 1, 16, Test Circuit Schematic, p. 3, 9 • Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant part numbers, p. 3, 9 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 13--15. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 16--18. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005--2006, 2008. All rights reserved. MRF6S21060NR1 MRF6S21060NBR1 Document Number: MRF6S21060N Rev. 5, 12/2008 20 RF Device Data Freescale Semiconductor