MRFE6S8046GNR1

Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications. • Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW Frequency 864 MHz 880 MHz 894 MHz Gps (dB) 19.9 20 19.8 hD (%) 58.7 58.5 57.7 MRFE6S8046NR1 MRFE6S8046GNR1 864 - 894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs • Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ] 47 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA, Pout = 17.8 Watts Avg. Spectral Regrowth @ 400 kHz (dBc) 61.2 63.4 63.7 Spectral Regrowth @ 600 kHz (dBc) 70.9 72.5 73 CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRFE6S8046NR1 Frequency 864 MHz 880 MHz 894 MHz Gps (dB) 19.8 19.9 19.8 hD (%) 43.8 43.6 43.1 EVM (% rms) 2.1 2 2 CASE 1487 - 05, STYLE 1 TO - 270 WB - 4 GULL PLASTIC MRFE6S8046GNR1 PARTS ARE SINGLE - ENDED Features • Class F Output Matched for Higher Impedances and Greater Efficiency • Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66% • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) RFin/VGS 3 2 RFout/VDS RFin/VGS 4 1 RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +66 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRFE6S8046NR1 MRFE6S8046GNR1 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 35.5 W CW, 28 Vdc, IDQ = 300 mA Case Temperature 82°C, 18 W CW, 28 Vdc, IDQ = 285 mA Symbol RθJC Value (1,2) 1.7 1.9 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 300 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Characteristic Power Gain Drain Efficiency Input Return Loss VGS(th) VGS(Q) VDS(on) 1 2 0.1 2.3 3 0.3 3 4 0.4 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (3,4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA, f = 894 MHz Symbol Gps ηD IRL Min 17.5 54 — Typ 19.8 57.7 - 17 Max 21.5 — -7 Unit dB % dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part internally matched both on input and output. 4. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued) MRFE6S8046NR1 MRFE6S8046GNR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW Frequency 864 MHz 880 MHz 894 MHz Characteristic Pout @ 1 dB Compression Point IMD Symmetry @ 41 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 30 MHz Bandwidth @ Pout = 35.5 W CW Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) Symbol P1dB IMDsym Gps (dB) 19.9 20 19.8 Min — — hD (%) 58.7 58.5 57.7 Typ 47 22 Max — — IRL (dB) - 12 - 17 - 17 Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, 864 - 894 MHz Bandwidth VBWres GF ΔG ΔP1dB — — — — 25 0.2 0.017 0.004 — — — — MHz dB dB/°C dBm/°C Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 285 mA, Pout = 17.8 W Avg., 864 - 894 MHz EDGE Modulation Spectral Regrowth @ 400 kHz (dBc) 61.2 63.4 63.7 Spectral Regrowth @ 600 kHz (dBc) 70.9 72.5 73 Frequency 864 MHz 880 MHz 894 MHz Gps (dB) 19.8 19.9 19.8 hD (%) 43.8 43.6 43.1 EVM (% rms) 2.1 2 2 MRFE6S8046NR1 MRFE6S8046GNR1 RF Device Data Freescale Semiconductor 3 R1 VBIAS Z7 + C10 C5 Z9 Z6 C14 VSUPPLY RF INPUT Z10 Z1 C1 C2 Z2 Z3 C4 Z4 Z5 Z11 C6 Z12 C8 Z13 Z14 C13 Z15 RF OUTPUT Z8 C3 DUT C11 C7 C9 C12 Z1 Z2 Z3 Z4 Z5 Z6* Z7 Z8* Z9* 1.320″ x 0.044″ Microstrip 0.212″ x 0.044″ Microstrip 0.362″ x 0.044″ Microstrip 0.321″ x 0.450″ Microstrip 0.039″ x 0.450″ Microstrip 0.306″ x 0.040″ Microstrip 0.708″ x 0.051″ Microstrip 0.738″ x 0.040″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.040″ x 0.450″ Microstrip 0.321″ x 0.450″ Microstrip 0.080″ x 0.280″ Microstrip 0.263″ x 0.044″ Microstrip 0.233″ x 0.044″ Microstrip 1.332″ x 0.044″ Microstrip Rogers R04350, 0.020″, εr = 3.50 * Line length includes microstrip bends Figure 2. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Schematic Table 6. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Component Designations and Values Part C1, C13 C2 C3, C4 C5 C6, C7 C8, C9 C10, C11 C12 C14 R1 Description 56 pF Chip Capacitors 3.9 pf Chip Capacitor 8.2 pF Chip Capacitors 0.01 μF Chip Capacitor 1.5 pF Chip Capacitors 1.2 pF Chip Capacitors 39 pF Chip Capacitors 6.8 pF Chip Capacitor 470 μF 63V Electrolytic Capacitor 4.7 KΩ, 1/4 W Chip Resistor Part Number ATC600F560BT500XT ATC600F3R0BT250XT ATC600F8R2BT500XT C1825C103K1GAC ATC600F1R5BT250XT ATC600F1R2BT250XT ATC600F390BT500XT ATC600F6R8BT500XT MCGPR63V477M13X26- RH CRCW12064K70FKEA Manufacturer ATC ATC ATC Kemet ATC ATC ATC ATC MultiComp Vishay MRFE6S8046NR1 MRFE6S8046GNR1 4 RF Device Data Freescale Semiconductor VGS C14 C10 C5 R1 VDS C1 C2 C3 CUT OUT AREA C6 C7 C8 C9 C12 C13 C4 C11 VDS MRFE6S8046GN/MRFE6S9046GN Rev. 2 Figure 3. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Component Layout MRFE6S8046NR1 MRFE6S8046GNR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 22 21.5 21 Gps, POWER GAIN (dB) 20.5 20 19.5 19 18.5 18 17.5 17 870 880 IRL VDD = 28 Vdc Pout = 35.5 W CW IDQ = 300 mA 900 910 920 930 940 950 Gps ηD 62 60 ηD, DRAIN EFFICIENCY (%) 58 56 54 52 50 48 46 44 −8 −10 −12 −14 −16 −18 890 42 960 970 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 35.5 Watts CW 22 21.5 21 Gps, POWER GAIN (dB) 20.5 20 19.5 19 18.5 18 17.5 17 870 EVM 880 890 900 910 920 930 940 950 IRL Gps VDD = 28 Vdc, Pout = 17.8 W (Avg.) IDQ = 285 mA, EDGE Modulation ηD 48 46 44 42 40 6 5 4 3 2 1 960 970 ηD, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) EVM, ERROR VECTOR MAGNITUDE (% rms) −10 −12 −14 −16 −18 −20 f, FREQUENCY (MHz) Figure 5. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 17.8 Watts Avg. 0 IMD, INTERMODULATION DISTORTION (dBc) −10 −20 IM3−U −30 −40 IM5−L −50 IM7−L −60 −70 1 10 TWO−TONE SPACING (MHz) 100 IM7−U 16 1 10 Pout, OUTPUT POWER (WATTS) CW 70 IM5−U IM3−L VDD = 28 Vdc, Pout = 41 W (PEP), IDQ = 300 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz Gps, POWER GAIN (dB) 21 f = 880 MHz 20 Gps 19 864 MHz 894 MHz 18 30 894 MHz 45 864 MHz ηD, DRAIN EFFICIENCY (%) 60 880 MHz 75 17 ηD VDD = 28 Vdc IDQ = 300 mA 15 0 Figure 6. Intermodulation Distortion Products versus Two - Tone Spacing Figure 7. Power Gain and Drain Efficiency versus Output Power MRFE6S8046NR1 MRFE6S8046GNR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 6 EVM, ERROR VECTOR MAGNITUDE (% rms) SPECTRAL REGROWTH @ 400 kHz (dBc) 5 4 3 17.8 W Avg. 2 1 4.5 W Avg. 0 865 870 875 880 885 890 895 VDD = 28 Vdc IDQ = 285 mA EDGE Modulation −40 VDD = 28 Vdc, IDQ = 285 mA −45 EDGE Modulation −50 −55 −60 −65 −70 −75 0 10 20 30 40 50 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) f = 894 MHz Pout = 25.5 W Avg. 880 MHz 864 MHz Figure 8. EVM versus Frequency Figure 9. Spectral Regrowth at 400 kHz versus Output Power 20 18 16 14 12 10 8 6 4 2 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. EVM f = 894 MHz ηD VDD = 28 Vdc, IDQ = 285 mA EDGE Modulation 65 59 ηD, DRAIN EFFICIENCY (%) 53 47 41 35 29 23 880 MHz 17 864 MHz 60 11 5 SPECTRAL REGROWTH @ 600 kHz (dBc) −50 −55 −60 −65 −70 −75 −80 0 VDD = 28 Vdc, IDQ = 285 mA EDGE Modulation f = 880 MHz 894 MHz 864 MHz 10 20 30 40 50 Pout, OUTPUT POWER (WATTS) EVM, ERROR VECTOR MAGNITUDE (% rms) −45 Figure 10. Spectral Regrowth at 600 kHz versus Output Power 20 Gain 15 Figure 11. EVM and Drain Efficiency versus Output Power 4 0 GAIN (dB) 10 IRL 5 VDD = 28 Vdc Pin = 0 dBm IDQ = 300 mA 650 750 850 950 1050 1150 1250 −4 IRL (dB) −8 0 −12 −5 550 −16 1350 f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response MRFE6S8046NR1 MRFE6S8046GNR1 RF Device Data Freescale Semiconductor 7 GSM TEST SIGNAL −10 −20 −30 −40 −50 (dB) −60 −70 −80 −90 −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz Figure 13. EDGE Spectrum VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW f (MHz) 820 840 860 880 900 920 940 960 980 Zsource W 4.11 - j6.76 3.74 - j6.21 3.42 - j5.75 3.17 - j5.29 2.94 - j4.86 2.78 - j4.47 2.65 - j4.14 2.51 - j3.82 2.38 - j3.57 Zload W 7.93 - j3.90 7.23 - j3.60 6.71 - j3.29 6.27 - j2.95 5.87 - j2.61 5.33 - j2.29 5.32 - j1.62 5.15 - j1.35 4.98 - j1.00 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 14. Series Equivalent Source and Load Impedance MRFE6S8046NR1 MRFE6S8046GNR1 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW 53 52 Pout, OUTPUT POWER (dBm) 51 50 49 48 47 46 45 44 43 23 24 25 26 27 28 29 30 31 32 33 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 865 880 895 P1dB Watts 55 55 54 dBm 47.4 47.4 47.3 63 62 62 P3dB Watts dBm 48.0 47.9 47.9 f = 880 MHz f = 895 MHz f = 865 MHz f = 865 MHz f = 895 MHz Actual f = 880 MHz Ideal Test Impedances per Compression Level f (MHz) 865 880 895 P1dB P1dB P1dB Zsource Ω 2.08 - j5.40 2.54 - j5.63 3.31 - j6.08 Zload Ω 4.39 - j2.89 4.63 - j2.96 4.42 - j3.30 Figure 15. Pulsed CW Output Power versus Input Power @ 28 V MRFE6S8046NR1 MRFE6S8046GNR1 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MRFE6S8046NR1 MRFE6S8046GNR1 10 RF Device Data Freescale Semiconductor MRFE6S8046NR1 MRFE6S8046GNR1 RF Device Data Freescale Semiconductor 11 MRFE6S8046NR1 MRFE6S8046GNR1 12 RF Device Data Freescale Semiconductor MRFE6S8046NR1 MRFE6S8046GNR1 RF Device Data Freescale Semiconductor 13 MRFE6S8046NR1 MRFE6S8046GNR1 14 RF Device Data Freescale Semiconductor MRFE6S8046NR1 MRFE6S8046GNR1 RF Device Data Freescale Semiconductor 15 PRODUCT DOCUMENTATION Refer to the following documents, tools and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date May 2009 • Initial Release of Data Sheet Description MRFE6S8046NR1 MRFE6S8046GNR1 16 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MRFE6S8046NR1 MRFE6S8046GNR1 Document Number: RF Device Data MRFE6S8046N Rev. 0, 5/2009 Freescale Semiconductor 17