Freescale Semiconductor
‘Technical Data
Document Number: MRFE6S8046N
Rev. 0, 5/2009
RF Power Field Effect Transistors
MRFE6S8046NR1
MRFE6S8046GNR1
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier
applications.
• Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout =
35.5 Watts CW
Frequency
Gps
(dB)
hD
(%)
864 MHz
19.9
58.7
880 MHz
20
58.5
894 MHz
19.8
57.7
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness
• Typical Pout @ 1 dB Compression Point ] 47 Watts CW
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA,
Pout = 17.8 Watts Avg.
Frequency
Gps
(dB)
hD
(%)
Spectral
Regrowth @
400 kHz
(dBc)
Spectral
Regrowth @
600 kHz
(dBc)
EVM
(% rms)
864 MHz
19.8
43.8
61.2
70.9
2.1
880 MHz
19.9
43.6
63.4
72.5
2
894 MHz
19.8
43.1
63.7
73
2
Features
• Class F Output Matched for Higher Impedances and Greater Efficiency
• Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66%
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
864 - 894 MHz, 35.5 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRFE6S8046NR1
CASE 1487 - 05, STYLE 1
TO - 270 WB - 4 GULL
PLASTIC
MRFE6S8046GNR1
PARTS ARE SINGLE - ENDED
RFin/VGS
3
2 RFout/VDS
RFin/VGS
4
1 RFout/VDS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +66
Vdc
Gate- Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 35.5 W CW, 28 Vdc, IDQ = 300 mA
Case Temperature 82°C, 18 W CW, 28 Vdc, IDQ = 285 mA
RθJC
Unit
°C/W
1.7
1.9
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
1
2.3
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 300 mAdc, Measured in Functional Test)
VGS(Q)
2
3
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.1
0.3
0.4
Vdc
Off Characteristics
On Characteristics
Functional Tests (3,4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA, f = 894 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Power Gain
Gps
17.5
19.8
21.5
dB
Drain Efficiency
ηD
54
57.7
—
%
Input Return Loss
IRL
—
- 17
-7
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part internally matched both on input and output.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MRFE6S8046NR1 MRFE6S8046GNR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW
Frequency
Gps
(dB)
hD
(%)
IRL
(dB)
864 MHz
19.9
58.7
- 12
880 MHz
20
58.5
- 17
894 MHz
19.8
57.7
- 17
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, 864 - 894 MHz Bandwidth
Characteristic
Pout @ 1 dB Compression Point
Symbol
Min
Typ
Max
Unit
P1dB
—
47
—
W
—
22
—
IMD Symmetry @ 41 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
25
—
MHz
Gain Flatness in 30 MHz Bandwidth @ Pout = 35.5 W CW
GF
—
0.2
—
dB
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.017
—
dB/°C
ΔP1dB
—
0.004
—
dBm/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
MHz
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 285 mA, Pout = 17.8 W
Avg., 864 - 894 MHz EDGE Modulation
Frequency
Gps
(dB)
hD
(%)
Spectral
Regrowth @
400 kHz
(dBc)
Spectral
Regrowth @
600 kHz
(dBc)
EVM
(% rms)
864 MHz
19.8
43.8
61.2
70.9
2.1
880 MHz
19.9
43.6
63.4
72.5
2
894 MHz
19.8
43.1
63.7
73
2
MRFE6S8046NR1 MRFE6S8046GNR1
RF Device Data
Freescale Semiconductor
3
VSUPPLY
Z7
R1
VBIAS
+
C10
C14
C5
Z9
Z6
RF
INPUT
Z10
Z1
Z2
Z3
C4 Z4
Z11
C7
C9
Z14
C12
Z15
C13
DUT
C3
C2
C8 Z13
Z5
Z8
C1
C6 Z12
RF
OUTPUT
C11
Z1
Z2
Z3
Z4
Z5
Z6*
Z7
Z8* Z9*
1.320″ x 0.044″ Microstrip
0.212″ x 0.044″ Microstrip
0.362″ x 0.044″ Microstrip
0.321″ x 0.450″ Microstrip
0.039″ x 0.450″ Microstrip
0.306″ x 0.040″ Microstrip
0.708″ x 0.051″ Microstrip
0.738″ x 0.040″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.040″ x 0.450″ Microstrip
0.321″ x 0.450″ Microstrip
0.080″ x 0.280″ Microstrip
0.263″ x 0.044″ Microstrip
0.233″ x 0.044″ Microstrip
1.332″ x 0.044″ Microstrip
Rogers R04350, 0.020″, εr = 3.50
* Line length includes microstrip bends
Figure 2. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Schematic
Table 6. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C13
56 pF Chip Capacitors
ATC600F560BT500XT
ATC
C2
3.9 pf Chip Capacitor
ATC600F3R0BT250XT
ATC
C3, C4
8.2 pF Chip Capacitors
ATC600F8R2BT500XT
ATC
C5
0.01 μF Chip Capacitor
C1825C103K1GAC
Kemet
C6, C7
1.5 pF Chip Capacitors
ATC600F1R5BT250XT
ATC
C8, C9
1.2 pF Chip Capacitors
ATC600F1R2BT250XT
ATC
C10, C11
39 pF Chip Capacitors
ATC600F390BT500XT
ATC
C12
6.8 pF Chip Capacitor
ATC600F6R8BT500XT
ATC
C14
470 μF 63V Electrolytic Capacitor
MCGPR63V477M13X26- RH
MultiComp
R1
4.7 KΩ, 1/4 W Chip Resistor
CRCW12064K70FKEA
Vishay
MRFE6S8046NR1 MRFE6S8046GNR1
4
RF Device Data
Freescale Semiconductor
VGS
C14
C10
C5
VDS
R1
C2
C3
C4
C6
CUT OUT AREA
C1
C7
C8
C9
C12
C13
C11
VDS
MRFE6S8046GN/MRFE6S9046GN
Rev. 2
Figure 3. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Component Layout
MRFE6S8046NR1 MRFE6S8046GNR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
22
62
21.5
58
56
20
54
Gps
19.5
52
19
50
18.5
48
VDD = 28 Vdc
Pout = 35.5 W CW
IDQ = 300 mA
18
IRL
17.5
17
870
880
890
900
910
920
930
940
950
46
−8
−10
−12
−14
44
−16
42
960 970
−18
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
21
20.5
ηD, DRAIN EFFICIENCY (%)
60
ηD
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 35.5 Watts CW
22
21
44
20.5
42
20
40
Gps
19.5
6
19
5
18.5
4
IRL
18
3
17.5
2
EVM
17
870
880
890
900
910
920
930
940
950
1
960 970
−10
−12
−14
−16
−18
−20
IRL, INPUT RETURN LOSS (dB)
46
EVM, ERROR VECTOR
MAGNITUDE (% rms)
Gps, POWER GAIN (dB)
ηD
ηD, DRAIN
EFFICIENCY (%)
48
VDD = 28 Vdc, Pout = 17.8 W (Avg.)
IDQ = 285 mA, EDGE Modulation
21.5
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout = 17.8 Watts Avg.
21
−10
f = 880 MHz
20
−20
IM3−U
−30
IM3−L
−40
IM5−L
IM5−U
−50
IM7−L
−60
75
880 MHz
864 MHz
60
894 MHz
Gps
19
45
864 MHz
894 MHz
30
18
17
IM7−U
ηD
−70
15
VDD = 28 Vdc
IDQ = 300 mA
16
1
10
100
ηD, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, Pout = 41 W (PEP), IDQ = 300 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
0
0
1
70
10
TWO−TONE SPACING (MHz)
Pout, OUTPUT POWER (WATTS) CW
Figure 6. Intermodulation Distortion Products
versus Two - Tone Spacing
Figure 7. Power Gain and Drain Efficiency
versus Output Power
MRFE6S8046NR1 MRFE6S8046GNR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−40
VDD = 28 Vdc
IDQ = 285 mA
EDGE Modulation
Pout = 25.5 W Avg.
4
3
17.8 W Avg.
2
1
4.5 W Avg.
0
865
875
880
885
890
864 MHz
−55
−60
−65
−70
895
0
20
10
30
40
50
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (WATTS)
Figure 8. EVM versus Frequency
Figure 9. Spectral Regrowth at 400 kHz
versus Output Power
EVM, ERROR VECTOR MAGNITUDE (% rms)
SPECTRAL REGROWTH @ 600 kHz (dBc)
880 MHz
−50
−75
870
−45
f = 880 MHz
VDD = 28 Vdc, IDQ = 285 mA
EDGE Modulation
−50
f = 894 MHz
VDD = 28 Vdc, IDQ = 285 mA
−45 EDGE Modulation
−55
894 MHz
−60
−65
864 MHz
−70
−75
20
65
VDD = 28 Vdc, IDQ = 285 mA
EDGE Modulation
18
59
16
53
14
47
ηD
12
41
10
35
8
29
f = 894 MHz
6
23
4
EVM
2
880 MHz 17
11
864 MHz
0
−80
0
30
20
10
40
50
ηD, DRAIN EFFICIENCY (%)
5
SPECTRAL REGROWTH @ 400 kHz (dBc)
EVM, ERROR VECTOR MAGNITUDE (% rms)
6
5
1
10
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Spectral Regrowth at 600 kHz
versus Output Power
Figure 11. EVM and Drain Efficiency
versus Output Power
20
60
4
15
0
10
−4
IRL
−8
5
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 300 mA
0
−5
550
650
750
IRL (dB)
GAIN (dB)
Gain
−12
850
950
1050
1150
−16
1350
1250
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
MRFE6S8046NR1 MRFE6S8046GNR1
RF Device Data
Freescale Semiconductor
7
GSM TEST SIGNAL
−10
Reference Power
−20
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
−30
−40
(dB)
−50
−60
400 kHz
−70
−80
−90
400 kHz
600 kHz
600 kHz
−100
−110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 13. EDGE Spectrum
VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW
Zsource
W
Zload
W
820
4.11 - j6.76
7.93 - j3.90
840
3.74 - j6.21
7.23 - j3.60
860
3.42 - j5.75
6.71 - j3.29
880
3.17 - j5.29
6.27 - j2.95
900
2.94 - j4.86
5.87 - j2.61
920
2.78 - j4.47
5.33 - j2.29
940
2.65 - j4.14
5.32 - j1.62
960
2.51 - j3.82
5.15 - j1.35
980
2.38 - j3.57
4.98 - j1.00
f
(MHz)
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MRFE6S8046NR1 MRFE6S8046GNR1
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW
53
Ideal
Pout, OUTPUT POWER (dBm)
52
f = 880 MHz
51
50
f = 865 MHz
49
f = 895 MHz
Actual
48
47
f = 880 MHz
46
f = 895 MHz
45
f = 865 MHz
44
43
23
24
25
26
27
28
30
29
31
33
32
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
865
55
47.4
63
48.0
880
55
47.4
62
47.9
895
54
47.3
62
47.9
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
865
P1dB
2.08 - j5.40
4.39 - j2.89
880
P1dB
2.54 - j5.63
4.63 - j2.96
895
P1dB
3.31 - j6.08
4.42 - j3.30
Figure 15. Pulsed CW Output Power
versus Input Power @ 28 V
MRFE6S8046NR1 MRFE6S8046GNR1
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MRFE6S8046NR1 MRFE6S8046GNR1
10
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
RF Device Data
Freescale Semiconductor
11
MRFE6S8046NR1 MRFE6S8046GNR1
12
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
RF Device Data
Freescale Semiconductor
13
MRFE6S8046NR1 MRFE6S8046GNR1
14
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
RF Device Data
Freescale Semiconductor
15
PRODUCT DOCUMENTATION
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2009
Description
• Initial Release of Data Sheet
MRFE6S8046NR1 MRFE6S8046GNR1
16
RF Device Data
Freescale Semiconductor
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MRFE6S8046NR1 MRFE6S8046GNR1
Document
RF
DeviceNumber:
Data MRFE6S8046N
Rev. 0, 5/2009
Freescale
Semiconductor
17
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