FMH06N90E

http://www.fujisemi.com FMH06N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3P(Q) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters GATE DRAIN SOURCE JEDEC:TO-3P Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 900 900 ±6 ±24 ±30 6 323.6 11.5 2.0 100 2.5 115 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Drain-Source Crossover Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q SW Q GD IAV VSD trr Qrr Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=900V, VGS=0V VDS=720V, VGS=0V VGS=±30V, VDS=0V I D =3.0A, VGS=10V I D =3.0A, VDS=25V VDS=25V VGS=0V f=1MHz Vcc =600V VGS=10V I D =3.0A RG=39Ω Vcc =450V I D =6A VGS=10V See Fig.5 L=6.59mH, Tch=25°C I F=6A, VGS=0V, Tch=25°C I F=6A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 900 3.5 3.5 6 typ. 4.0 10 2.1 7.0 980 95 6.5 33 32 100 32 33 10 3.5 11 0.90 1.6 9.5 max. 4.5 25 250 100 2.5 1500 150 10 50 48 150 48 50 15 5.5 17 1.35 Unit V V µA nA Ω S pF Tch=25°C Tch=125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Note *1 : Tch≤150°C. Note *2 : Stating Tch=25°C, IAS=2.4A, L=103mH, Vcc=90V, RG =10Ω, E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche current' graph. Symbol Rth (ch-c) Rth (ch-a) min. typ. max. 1.087 50.0 Unit °C/W °C/W Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=2.0kV/µs, Vcc≤BVDSS, Tch≤150°C. 1 FMH06N90E Allowable Power Dissipation PD=f(Tc) 10 FUJI POWER MOSFET http://www.fujisemi.com Safe Operating Area ID=f(VDS):Duty=0(Single pulse), Tc=25 °c 150 2 125 t= 1 µs 10 1 100 10µs PD [W] 100µs ID [A] 75 10 0 50 1ms 10 -1 Power loss wavefo rm : Square wavefo rm PD t 25 0 0 25 50 75 Tc [°C] 100 125 150 10 -2 10 -1 10 0 10 VDS [V] 1 10 2 10 3 Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25°C 8 20V 100 TypicalTransferCharacteristic ID=f(VGS):80µs pulse test, VDS=25V, Tch=25°C 10V 7.0V 7 6 6.0V 5 ID [A] ID[A] 1 10 4 3 VGS=5.5V 2 1 0.1 0 0 4 8 12 VDS [V] 16 20 24 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 Typical Transconductance gfs=f(ID):80µs pulse test, VDS=25V, Tch=25°C 100 4.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25°C 3.6 VGS=5.5V 6V RDS(on) [ Ω ] 10 gfs [S] 3.2 2.8 7V 10V 20V 1 2.4 2.0 0.1 0.1 1 ID [A] 10 100 1.6 0 1 2 3 4 ID [A] 5 6 7 8 2 FMH06N90E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3.0A, VGS=10V 8 FUJI POWER MOSFET http://www.fujisemi.com 8 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA 7 7 6 6 5 RDS(on) [Ω] VGS(th) [V] 5 max. typ. 4 max. typ. 4 3 3 min. 2 2 1 1 0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=6A, Tch=25°C 14 10 4 Typical Capacitance C=f(VDS):VGS=0V, f=1MHz 12 10 3 Ciss 10 Vcc= 120V 450V 720V C [pF] 10 2 VGS [V] 8 6 Coss 4 10 1 2 Crss 10 0 0 0 10 20 30 Qg [nC] 40 50 10 -2 10 -1 10 0 10 VDS [V] 1 10 2 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test, Tch=25°C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V, VGS=10V, RG=39Ω 10 10 2 tf td(off) IF [A] t [ns] 1 td(on) tr 10 1 0.1 0.01 0.00 10 0 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 -1 10 0 10 ID [A] 1 10 2 3 FMH06N90E Maximum Avalanche Energyvs. starting Tch E(AV)=f(startingTch):Vcc=90V, I(AV)