FMR23N60ES

FMR23N60ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3PF Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 6 00 6 00 ± 23 ± 92 ± 30 23 1033.1 20 4.7 100 3.13 200 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS = VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =11.5A, VGS =10V I D =11.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =11.5A RG = 8.2Ω Vcc =300V I D =23A VGS =10V L=1.56mH, Tch =25°C I F =23A, VGS =0V, Tch =25°C I F =23A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 6 00 3.7 9 23 typ. 4.2 10 0.24 18 3500 380 22 45 34 110 16 92 28 33 11 0.90 0.92 14 max. 4.7 25 250 100 0.28 5250 570 33 68 51 165 24 138 42 50 17 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to c ase Channel to ambient min. typ. max. 0.630 40.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =10A, L=18.9mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/µs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=4.7kV/µs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMR23N60ES Allowable Power Dissipation PD=f(Tc) 10 250 1 2 FUJI POWER MOSFET 300 Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c t= 1µs 10µs 100µs 200 10 PD [ W ] 100 10 50 -1 ID [A] 150 10 0 1m s P o w e r lo s s w a v e f o r m : Squa r e w a v e fo r m PD t D.C. 0 0 25 50 75 Tc [°C] 100 125 150 10 -2 10 0 10 1 VDS [V] 10 2 10 3 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 70 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 60 50 10V 8. 0 V 7. 5 V ID[A] 10 ID [A] 40 7 . 0V 30 1 20 6 . 5V VGS=6.0V 0.1 10 0 0 4 8 12 VDS [V] 16 20 24 0 2 4 6 VGS[V] 8 10 12 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.7 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=6.0V 0.6 6.5V 7V 10 RDS(on) [ Ω ] 0.5 gfs [S] 0.4 8V 10V 20V 1 0.3 0.2 0.1 0.1 1 ID [A] 10 100 0.1 0 10 20 30 ID [A] 40 50 60 2 FMR23N60ES Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA FUJI POWER MOSFET 1.0 8 7 0.8 6 VGS(th) [V] RDS(on) [ Ω ] 0.6 5 4 3 max. typ. min. 0.4 max. typ. 2 1 0.2 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=23A,Tch=25 °C 14 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 Vcc= 120V 300V 480V 10 4 10 Ciss 10 3 VGS [V] 6 C [pF] 8 10 2 Coss 4 10 2 1 Crss 0 0 20 40 60 80 100 120 140 Qg [nC] 10 0 10 -2 10 -1 10 0 10 1 10 2 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=8.2 Ω td(off) 10 10 2 tf td(on) IF [A] t [ns] tr 1 10 1 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 1 10 2 ID [ A] 3 FMR23N60ES Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)