FMR28N50E

FMR28N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3PF Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 500 500 ± 28 ±112 ± 30 28 1033.1 20 10.9 100 3.13 200 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ± 30V, VDS =0V I D =14A, VGS =10V I D =14A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =14A RGS = 5.1Ω Vcc =250V I D =28A VGS =10V L=1.04mH, Tch =25°C I F =28A, VGS =0V, Tch =25°C I F =28A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 2.5 16 28 typ. 3.0 10 0.16 32 4 400 420 32 26 14 144 24 130 30 40 0.90 0.72 11.2 max. 3.5 25 250 100 0.19 66 00 63 0 48 39 21 216 36 195 45 60 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 0.630 40.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =12A, L=13.2mH, Vcc=50V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/μs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=10.9kV/μs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMR28N50E Allowable Power Dissipation PD=f(Tc) 10 250 1 2 FUJI POWER MOSFET 300 Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c t= 1µs 10µs 100µs 200 10 PD [ W ] 100 10 50 -1 ID [A] 150 10 0 1m s P o w e r lo ss wa v e f o rm : S q u a r e w a v e fo r m PD t D.C. 0 0 25 50 75 Tc [°C] 100 125 150 10 -2 10 0 10 1 VDS [V] 10 2 10 3 80 70 60 50 I D [ A] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 10V 6 .0 V 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 10 40 30 20 10 0 0 4 8 12 VDS [V] 16 20 5 .5 V ID[A] 1 5 .0 V VGS=4.5V 0.1 24 2 3 4 VGS[V] 5 6 7 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.5V 5V 0.5 5.5V 10 RDS(on) [ Ω ] 0.4 gfs [S] 0.3 6V 0.2 10V 1 0.1 0.1 0.1 1 ID [A] 10 100 0.0 0 10 20 30 ID [A] 40 50 60 2 FMR28N50E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=14A,VGS=10V FUJI POWER MOSFET 0.6 6 Gate T hreshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250 µA 0.5 5 VGS(th) [V] 0.4 RDS(on) [ Ω ] 4 m ax. 3 typ. min. 2 0.3 m ax. 0.2 typ. 0.1 1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=28A,Tch=25 °C 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 12 10 Vcc= 100V 250V 400V 10 3 VG S [ V] C [pF] 8 10 2 Coss 6 4 10 1 Crss 2 0 0 20 40 60 80 100 120 Qg [nC] 140 160 180 200 10 0 10 -1 10 0 10 VDS [V] 1 10 2 10 3 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=5.1 Ω td(off) 10 10 2 tf I F [ A] t [ns] td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 ID [A] 10 1 10 2 3 FMR28N50E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)