GJ01L60

Pb Free Plating Product ISSUED DATE :2005/08/19 REVISED DATE : GJ01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 1A Description The GJ01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. Features *Repetitive Avalanche Rated *Simple Drive Requirement *Fast Switching Speed *RoHS Compliant Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : 2 Ratings 600 ±30 1 0.8 3 29 0.232 0.5 1 0.5 -55 ~ +150 Unit V V A A A W W/ : mJ A mJ : Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 4.3 110 Unit : /W : /W GJ01L60 Page: 1/4 ISSUED DATE :2005/08/19 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 600 2.0 - Typ. 0.8 0.8 4.0 1.0 1.1 6.6 5.0 11.7 9.2 170 30.7 5.1 Max. 4.0 ±100 10 100 12 - Unit V V/ : V S nA uA uA Test Conditions VGS=0, ID=1mA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=0.5A VGS= ±30V VDS=600V, VGS=0 VDS=480V, VGS=0 VGS=10V, ID=0.5A Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance Total Gate Charge 3 3 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ID=1A VDS=480V VGS=10V VDD=300V ID=1A VGS=10V RG=3.3 RD=300 VGS=0V VDS=25V f=1.0MHz ns pF Source-Drain Diode Parameter Forward On Voltage3 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Symbol VSD IS ISM Min. - Typ. - Max. 1.2 1 5 Unit V A A Test Conditions IS=1A, VGS=0V, Tj=25 : VD=VG=0V, VS=1.2V Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=50V, L=1.0mH, RG=25 Ł , IAS=1.0A. 3. Pulse width 300us, duty cycle 2%. GJ01L60 Page: 2/4 ISSUED DATE :2005/08/19 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GJ01L60 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/08/19 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ01L60 Page: 4/4