SSM60T03GJ

SSM60T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM60T03 acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM60T03GH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM60T03GJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability. 30V 12mΩ 45A Pb-free; RoHS-compliant TO-251 (IPAK) and TO-252 (DPAK) G GD S D S TO-251 (suffix J) TO-252 (suffix H) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD EAS TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current 1 Value 30 ±20 45 32 120 44 0.352 3 Units V V A A A W W/°C mJ °C °C Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy Storage temperature range Operating junction temperature range 29 -55 to 175 -55 to 175 THERMAL CHARACTERISTICS Symbol RΘ JC RΘ JA Parameter Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient Value 3.4 110 Units °C/W °C/W Notes: 1.Pulse width must be limited to avoid exceeding the safe operating area. 2.Pulse width