Pb Free Plating Product
ISSUED DATE :2006/08/15 REVISED DATE :
GS7407
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 135m -1.2A
The GS7407 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. This device is suitable for use as a load switch or in PWM application. The GS7407 is universally used for all commercial-industrial applications.
Description
* Lower Gate Charge *Small Package Outline *RoHS Compliant
Features
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a
Ratings -20 ±8 -1.2 -1.0 -10 0.35 0.0028 -55 ~ +150 Value 360
Unit V V A A A W W/ : : Unit : /W
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
GS7407
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ISSUED DATE :2006/08/15 REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : )
Symbol BVDSS VGS(th) gfs IGSS IDSS
Min. -20 -0.3 -
Typ. 7 6.2 0.54 1.44 12 10.7 74 28.7 540 72 49 12
Max. -1.0 ±100 -1 -5 135 170 220 -
Unit V V S nA uA uA
Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-3A VGS= ±8V VDS=-16V, VGS=0 VDS=-16V, VGS=0 VGS=-4.5V, ID=-1.2A
Static Drain-Source On-Resistance
RDS(ON)
-
m
VGS=-2.5V, ID=-1.0A VGS=-1.8V, ID=-1.0A ID=-1.0A VDS=-10V VGS=-4.5V VDS=-10V VGS=-4.5V RG=3 RL=15 VGS=0V VDS=-10V f=1.0MHz f=1.0MHz
Total Gate Charge
2
Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Symbol VSD
2
-
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage
2
Min. -
Typ. 24.5 17.4 -
Max. -1.0 -0.6
Unit V ns nC A
Test Conditions IS=-1.0A, VGS=0V IS=-1A, VGS=0V dI/dt=100A/ s VD=VG=0V, VS=-1.0V
Reverse Recovery Time
Trr Qrr IS
Reverse Recovery Charge
Continuous Source Current (Body Diode)
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec.
GS7407
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ISSUED DATE :2006/08/15 REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain Current and Gate Voltage
10
Fig 4. On-Resistance v.s. Junction Temperature
1
0.1
0.01
0.001
0.0001
0.00001
Fig 5. On-Resistance v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
GS7407
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ISSUED DATE :2006/08/15 REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Normalized Maximum Transient Thermal Impedance Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GS7407
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