HMD8M32M16G

HANBit HMD8M32M16 32Mbyte(8Mx32) 72-pin F/P Mode 2K Ref. SIMM Design 5V Part No. HMD8M32M16, HMD8M32M16G GENERAL DESCRIPTION The HMD8M32M16 is a 8M x 32 bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a single In-line Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible. FEATURES w Part Identification HMD8M32M16--2048 Cycles/32ms Ref, Solder HMD8M32M16G--2048 Cycles/32ms Ref, Gold w Access times : 50, 60ns w High-density 32MByte design w Single + 5V ±0.5V power supply w JEDEC standard pinout w FP(Fast Page) mode operation w TTL compatible inputs and outputs w FR4-PCB design PIN SYMBOL PIN PIN ASSIGNMENT SYMBOL PIN SYMBOL PIN SYMBOL 1 2 3 4 5 6 7 8 9 10 Vss DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 A10 DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 NC(A11) Vcc A8 A9 /RAS1 /RAS0 NC NC 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 NC NC Vss /CAS0 /CAS2 /CAS3 /CAS1 /RAS0 /RAS1 NC /W NC DQ8 DQ24 DQ9 DQ25 DQ10 DQ26 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 DQ11 DQ27 DQ12 DQ28 Vcc DQ29 DQ13 DQ30 DQ14 DQ31 DQ15 NC PD1 PD2 PD3 PD4 NC Vss OPTIONS w Timing 50ns access 60ns access w Packages 72-pin SIMM MARKING -5 -6 M 11 12 13 14 15 16 17 18 PERFORMANCE RANGE SPEED -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tPC 35ns 40ns SIMM TOP VIEW Note: A11 is not used for HMD8M32M16 PIN NAMES Pin Name A0-A10 A0-A11 DQ0-DQ31 /W Function Address Input(2K Ref) Address Input(4K Ref) Data In/Out Read/Write Input Pin Name /RAS0, /RAS1 /CAS0 - /CAS3 PD1 - PD4 Function Row Address Strobe Column Address Strobe Presence Detect Pin Name Vss NC Vcc Function Ground No Connection Power(+5V) URL:www.hbe.co.kr REV.1.0 (August.2002) 1 HANBit Electronics Co.,Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM /CAS0 HMD8M32M16 /RAS0 /CAS DQ1 /RAS DQ2 U0 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 DQ4 U8 /CAS /RAS /OE /W /RAS1 A0-A10(A11) /CAS DQ1 /RAS DQ2 U1 /OE DQ3 /W A0-A10(A11). DQ4 /CAS1 DQ1 DQ2 DQ3 DQ4 U9 /CAS /RAS /OE /W A0-A10(A11) /CAS DQ1 U2 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 DQ4 U10 /CAS /RAS /OE /W A0-A10(A11) /CAS DQ1 /RAS DQ2 U3 /OE DQ3 /W A0-A10(A11). DQ4 /CAS2 DQ1 DQ2 DQ3 DQ4 U11 /CAS /RAS /OE /W A0-A10(A11) /CAS DQ1 U4 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 DQ4 U12 /CAS /RAS /OE /W A0-A10(A11) /CAS DQ1 /RAS DQ2 U5 /OE DQ3 /W A0-A10(A11). DQ4 /CAS3 DQ1 DQ2 DQ3 DQ4 U13 /CAS /RAS /OE /W A0-A10(A11) /CAS DQ1 U6 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 DQ4 U14 /CAS /RAS /OE /W A0-A10(A11) /CAS DQ1 U7 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4 /W A0-A10 (A11) DQ1 DQ2 DQ3 DQ4 /CAS /RAS /OE A0-A10(A11) /W U15 URL:www.hbe.co.kr REV.1.0 (August.2002) 2 HANBit Electronics Co.,Ltd. HANBit ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN ,OUT Vcc PD TSTG HMD8M32M16 RATING -1V to 7.0V -1V to 7.0V 16W -55oC to 150oC Short Circuit Output Current IOS 50mA w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED DC OPERATING CONDITIONS ( Voltage reference to VSS, TA=0 to 70 o C ) PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage SYMBOL Vcc Vss VIH VIL MIN 4.5 0 2.4 -1.0 TYP. 5.0 0 MAX 5.5 0 Vcc+1 0.8 UNIT V V V V DC AND OPERATING CHARACTERISTICS SYMBOL ICC1 -6 ICC2 -5 ICC3 -6 -5 ICC4 -6 ICC5 -5 ICC6 -6 Il(L) IO(L) VOH VOL ICC2 : Standby Current ( /RAS=/CAS=VIH ) ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min ) URL:www.hbe.co.kr REV.1.0 (August.2002) HANBit Electronics Co.,Ltd. SPEED -5 MIN -80 -80 2.4 - MAX 1760 1600 32 1760 1600 1440 1280 16 1760 1600 80 80 0.4 UNITS mA mA mA mA mA mA mA mA mA mA µA µA V V ICC1 : Operating Current * (/RAS , /CAS , Address cycling @tRC=min.) 3 HANBit ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min ) ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V ) ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min ) IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V) IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V VOH : Output High Voltage Level (IOH= -5mA ) VOL : Output Low Voltage Level (IOL = 4.2mA ) HMD8M32M16 * NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle. CAPACITANCE ( TA=25 C, Vcc = 5V, f = 1Mz ) SYMBOL CIN1 C IN2 CIN3 CIN4 CDQ1 MIN MAX 80 112 112 112 112 UNITS pF pF pF pF pF o DESCRIPTION Input Capacitance (A0-A10) Input Capacitance (/W) Input Capacitance (/RAS0) Input Capacitance (/CAS0-/CAS3) Input/Output Capacitance (DQ0-31) AC CHARACTERISTICS ( 0 C ≤ TA ≤ 70oC , Vcc = 5V±10%, See notes 1,2.) -5 -6 UNIT MIN MAX MIN 110 50 13 25 3 3 2 30 50 13 60 15 20 15 5 10K 45 30 10K 13 50 3 3 2 30 60 15 70 20 20 15 5 10K 50 35 10K 15 50 60 15 30 MAX ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 90 o PARAMETER Random read or write cycle time Access time from /RAS Access time from /CAS Access time from column address /CAS to output in Low-Z Output buffer turn-off delay Transition time (rise and fall) /RAS precharge time /RAS pulse width /RAS hold time /CAS hold time /CAS pulse width /RAS to /CAS delay time /RAS to column address delay time /CAS to /RAS precharge time URL:www.hbe.co.kr REV.1.0 (August.2002) SYMBOL tRC tRAC tCAC tAA tCLZ tOFF tT tRP tRAS tRSH tCSH tCAS tRCD tRAD tCRP 4 HANBit Electronics Co.,Ltd. HANBit Row address set-up time Row address hold time Column address set-up time Column address hold time Column address hold referenced to /RAS Column Address to /RAS lead time Read command set-up time Read command hold referenced to /CAS Read command hold referenced to /RAS Write command hold time Write command hold referenced to /RAS Write command pulse width Write command to /RAS lead time Write command to /CAS lead time Data-in set-up time Data-in hold time Data-in hold referenced to /RAS Refresh period Write command set-up time /CAS setup time (C-B-R refresh) /CAS hold time (C-B-R refresh) /RAS precharge to /CAS hold time Access time from /CAS precharge Fast page mode cycle time /CAS precharge time (Fast page) /RAS pulse width (Fast page ) /W to /RAS precharge time (C-B-R refresh) /W to /RAS hold time (C-B-R refresh) /CAS precharge(C-B-R counter test) NOTES tASR tRAH tASC tCAH tAR tRAL tRCS tRCH tRRH tWCH tWCR tWP tRWL tCWL tDS tDH tDHR tREF tWCS tCSR tCHR tRPC tCPA tPC tCP tRASP tWRP tWRH tCPT 40 10 60 10 10 20 100K 0 10 15 5 35 0 10 0 15 50 30 0 0 0 15 50 15 15 15 0 15 50 16 HMD8M32M16 0 10 0 15 55 35 0 0 0 15 55 15 20 20 0 15 55 16 0 10 15 5 40 45 10 70 10 10 30 100K ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles before proper device operation is achieved. 2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3.Measured with a load equivalent to 1TTL loads and 100pF 4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC. 5.Assumes that tRCD ≥ tRCD(max) 6. tAR, tWCR, tDHR are referenced to tRAD(max) 7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH URL:www.hbe.co.kr REV.1.0 (August.2002) 5 HANBit Electronics Co.,Ltd. HANBit or VOL. 8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter. HMD8M32M16 They are included in the data sheet as electrical characteristic only. If t WCS ≥ tWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 9. Either tRCH or tRRH must be satisfied for a read cycle. 10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in readwrite cycles. 11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA. URL:www.hbe.co.kr REV.1.0 (August.2002) 6 HANBit Electronics Co.,Ltd. HANBit TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE HMD8M32M16 /RAS VIHVILtCRP tRCD tRAD tASR tRAH tASC tRC tRAS tCSH tRSH tCAS tCAH COLUMN ADDRESS tRP tCRP /CAS VIHVIL- tRAL A VIHVILROW ADDRESS tRCS /W VIHVILVIHVILtRAC OPEN tRRH tAA tOEA tCAC tCLZ tRCH tOFF tOEZ /OE DQ0-DQ3(7) VOHVOL- DATA-OUT TIMING WAVEFORM OF WRITE CYCLE (EARLY WRITE) NOTE : Dout = Open tRC tRAS tCRP tRCD tRAD tASR tRAH tASC tCAH COLUMN ADDRESS /RAS VIHVIL- tRP tCSH tRSH tCAS tRAL tCRP /CAS VIHVIL- A VIHVILROW ADDRESS tCWL tRWL tWCS tWCH tWP /W VIHVILVIHVILtDS tDH DATA-IN /OE DQ0-DQ3(7) VOHVOL- URL:www.hbe.co.kr REV.1.0 (August.2002) 7 HANBit Electronics Co.,Ltd. HANBit PACKAGING INFORMATION HMD8M32M16 108.0 mm 3.38 mm R 1.57 mm 101.19 mm 3.18 mm DIA 0.51 mm 21.50 10.16 mm 6.35 mm 1 2.03 mm 1.02 mm 6.35 mm 95.25 mm 6.35 mm 1.27 72 3.34 mm 0.25 mm MAX 2.54 mm MIN Gold : 1.04±0.10 mm 1.27 Solder:0.914±0.10mm 1.29 ±0.08mm ORDERING INFORMATION Part Number Density Org. Package Vcc SPEED HMD8M32M16G-5 HMD8M32M16G-6 32MByte 32MByte 8MX 32bit 8MX 32bit 72 Pin-SIMM 72 Pin-SIMM 5.0V 5.0V 50ns 60ns URL:www.hbe.co.kr REV.1.0 (August.2002) 8 HANBit Electronics Co.,Ltd.