HMF2M32B4V

HANBit HMF2M32B4V Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V Design Part No. HMF2M32B4V GENERAL DESCRIPTION The HMF2M32B4V is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 72-pin SO-DIMM type, single - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible. FEATURES w Access time: 70, 80, 90, 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3.0V ± 0.5V power supply w All in/outputs are LVTTL-compatible w FR4-PCB design w Minimum 1,000,000 write/erase cycle w Sector erases architecture PIN 1 2 3 4 5 6 7 Symbol Vss /RESET DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 Vcc DQ7 /CE_1L /CE_2L DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 PIN 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 PIN ASSIGNMENT Symbol DQ15 NC (/CE_4L) NC (/CE_3H) DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 Vcc DQ22 DQ23 /CE_1H /CE_2H DQ24 DQ25 DQ26 DQ27 Vss DQ28 PIN 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 Symbol DQ29 DQ30 DQ31 NC NC (/CE_4H) NC (/CE_3H) A19 /OE /WE A18 A17 A16 A15 A14 A13 A12 A11 A10 Vcc A9 PIN 61 62 63 64 65 66 67 68 69 70 71 72 Symbol A8 A7 A6 A5 A4 A3 A2 A1 A0 A20 NC Vss OPTIONS w Timing 70ns access 80ns access 90ns access 120ns access w Packages 72-pin SO-DIMM MARKING -70 -80 -90 -120 8 9 10 11 12 13 14 B 15 16 17 18 19 20 URL :www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM HMF2M32B4V 32 DQ0 - DQ31 20 A0 – A19 A0-19 DQ 0-15 /WE /OE /CE_IL /CE RY-BY /Reset U1 A0-19 DQ 15-31 /WE /OE /CE_IH U3 /CE RY-BY /Reset A0-19 DQ 0-15 /WE /OE /CE_2L /CE RY-BY /Reset U2 A0-19 DQ 15-31 /WE /OE /CE_2H /RY_BY /RESET /WE /OE /CE RY-BY /Reset U4 URL :www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L /RESET Vcc±0.3V H H H HMF2M32B4V DQ ( /BYTE=L ) HIGH-Z HIGH-Z DOUT DIN POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -0.5V to Vcc+0.5V -0.5V to +4.0V -65oC to +150oC Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not i mplied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ± 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 2.7V 0 0 TYP. MAX 3.6V 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current (1) /OE = VIH, Vcc Active Write Current (2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes : 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max /CE = VIL, /OE=VIH /CE, /RESET=Vcc ±0.3V 1MHZ ICC2 ICC3 VLKO 2.3 TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, V OUT= GND to Vcc IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc =Vcc min /CE = VIL, 5MHZ ICC1 4 40 8 60 60 2.5 mA mA V SYMBOL IL1 IL0 VOH VOL 18 2.4 0.45 32 mA MIN MAX ±1.0 ±1.0 UNIT µA µA V V URL :www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit ERASE AND PROGRAMMING PERFORMANCE PARAMETER MIN. Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time LIMITS TYP. 0.7 25 9 18 300 54 MAX. 15 sec sec µs sec UNIT HMF2M32B4V COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance TEST SETUP VIN = 0 VOUT = 0 VIN = 0 MIN 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tQH Read Cycle Time Address to Output Delay Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First /CE = V IL /OE = VIL /OE = VIL Min Max Max Max Max Max Min TEST SETUP -70R 70 70 70 30 25 25 -80 80 80 80 30 25 25 0 -90 90 90 90 35 30 30 -120 120 120 120 35 30 30 ns ns ns ns ns ns ns Speed Options UNIT TEST SPECIFICATIONS TEST CONDITION Output load Output load capacitance,CL (Including jig capacitance) Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 30 5 0.0-3.0 1.5 1.5 70R, 80 1TTL gate 100 pF ns V V V 90, 120 UNIT URL :www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit 5.0V HMF2M32B4V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min 35 35 30 9 0.7 50 45 35 45 35 0 0 0 0 0 35 50 70R 70 80 80 0 45 45 50 50 90 90 120 12 ns ns ns ns ns ns ns ns ns ns ns µs sec µs Speed Options UNIT Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL :www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 35 35 30 9 0.7 45 35 45 35 0 0 0 0 0 -70R 70 -80 80 0 HMF2M32B4V Speed Options UNIT -90 90 120 12 ns ns 45 45 50 50 ns ns ns ns ns ns ns 35 50 ns ns µs sec Notes : 1. This does not include the preprogramming ti me 2 . This timing is only for Sector Protect operations u READ OPERATIONS TIMING URL :www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit u RESET TIMING HMF2M32B4V u PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes URL :www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit Alternate /CE Controlled Writes HMF2M32B4V u CHIP/BLOCK ERASE OPERATION TIMINGS URL :www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION URL :www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION HMF2M32B4V URL :www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS HMF2M32B4V 2.2 mm MAX 1.0 ± 0.1mm URL :www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit ORDERING INFORMATION Component Number 4EA 4EA 4EA 4EA HMF2M32B4V Part Number Density Org. Package Vcc SPEED HMF2M32B4V-70 HMF2M32B4V-80 HMF2M32B4V-90 HMF2M32B4V-120 8MByte 8MByte 8MByte 8MByte 2Mx 32 72Pin – SODIMM 72Pin – SODIMM 72Pin – SODIMM 72Pin – SODIMM 3.3V 3.3V 3.3V 3.3V 70ns 80ns 90ns 120ns 2Mx 32 2Mx 32 2Mx 32 URL :www.hbe.co.kr REV.02(August,2002) 12 HANBit Electronics Co., Ltd.