HMF4M32M8V

HANBit HMF4M32M8V Flash-ROM Module 16MByte (4Mx32Bit), 72Pin-SIMM, 3.3V Design Part No. HMF4M32M8V GENERAL DESCRIPTION The HMF4M32M8V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x32bit configuration. The module consists of eight 2M x 8bit FROM mounted on a 72 -pin, double -sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, ,(/CE_1L, /CE_1H, /CE_2L, /CE_2H) are used to enable the module ’s 16 bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are TTLcompatible. FEATURES PIN w Access time : 70, 80, 90, 120ns w High-density 16MByte design w High-reliability, low-power design w Single + 3.3V ± 0.3V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotection 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Symbol Vss /RESET DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 Vcc DQ7 /CE_1L /CE_2L DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 NC NC DQ16 PIN ASSIGNMENT PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Symbol DQ17 DQ18 DQ19 DQ20 DQ21 Vcc DQ22 DQ23 /CE_1H /CE_2H DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 DQ31 NC NC Vcc A19 /OE PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol /WE A18 A17 A16 A15 A14 A13 A12 A11 A10 Vcc A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A20 NC(A21) Vss OPTIONS w Timing 70ns access 80ns access 90ns access 120ns access w Packages 72-pin SIMM MARKING -70 -80 -90 -120 15 16 17 18 19 20 21 22 M 23 24 URL:www.hbe.co.kr REV.02(August,2002). 1 HANBit Electronics Co., Ltd HANBit FUNCTIONAL BLOCK DIAGRAM HMF4M32M8V DQ0 - DQ31 A1 – A20 A0 /CE_1L 32 21 A0-19 DQ15/A-1 DQ 0-7 /OE DQ 0-7 /CE /CE_2L A0-19 DQ15/A-1 /CE /OE /WE RY-BY /RESET U1 /WE RY-BY /RESET U5 /CE_1L A0-19 DQ15/A-1 /CE DQ 8-15 /OE /WE RY-BY /RESET A0-19 DQ15/A-1 /OE DQ 8-15 /CE /CE_2L U2 /WE RY-BY /RESET U6 A0-19 DQ15/A-1 /CE_1H /CE /OE /WE RY-BY /RESET DQ16-23 A0-19 DQ15/A-1 DQ16-23 /OE /CE /CE_2H /WE RY-BY /RESET U3 U7 A0-19 DQ15/A-1 /CE_1H /OE /WE /RESET /CE /OE /WE RY-BY /RESET DQ24-31 A0-19 DQ15/A-1 /OE DQ24-31 /CE /CE_2H U4 /WE RY-BY /RESET U8 URL:www.hbe.co.kr REV.02(August,2002). 2 HANBit Electronics Co., Ltd HANBit TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L /RESET Vcc±0.3V H H H HMF4M32M8V DQ ( /BYTE=L ) HIGH-Z HIGH-Z DOUT DIN POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Power dissipation Storage Temperature SYMBOL VIN,OUT VCC PD TSTG RATING -0.5V to Vcc+0.5V -0.5V to +4.0V 8W -65oC to +150oC Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not imp lied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ± 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 2.7V 0 0 TYP. MAX 3.6V 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current (1) /OE = VIH, Vcc Active Write Current (2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes : 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. /CE = VIL, /OE=VIH /CE, /RESET=Vcc ±0.3V 1MHZ ICC2 ICC3 VLKO TEST CONDITIONS Vcc=Vcc max, V IN= VSS to Vcc Vcc=Vcc max, V OUT= VSS to Vcc IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc =Vcc min /CE = VIL, 5MHZ ICC1 16(Tpy) 160(Tpy) 1.6(Tpy) 2.3 32 240 40.0 2.5 mA µA V SYMBO L IL1 IL0 0.85x VOH Vcc VOL 72(Tpy) 0.45 128 mA V V MIN MAX ±1.0 ±1.0 UNIT µA µA URL:www.hbe.co.kr REV.02(August,2002). 3 HANBit Electronics Co., Ltd HANBit 2 . Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max HMF4M32M8V ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time TYP. 0.7 25 9 12 300 36 MAX. 15 sec sec µs sec Excludes system-level overhead Excludes 00H programming prior to erasure UNIT COMMENTS TSOP CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance o TEST SETUP VIN = 0 VOUT = 0 VIN = 0 TYP. 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tQH Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First /CE = V IL /OE = VIL /OE = VIL Min Max Max Max Max Max Min TEST SETUP -70R 70 70 70 30 25 25 -80 80 80 80 30 25 25 0 -90 90 90 90 35 30 30 -120 120 120 120 50 30 30 ns ns ns ns ns ns ns Speed Options UNIT TEST SPECIFICATIONS TEST CONDITION Output load Output load capacitance,CL (Including jig capacitance) Input rise and fall times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels URL:www.hbe.co.kr REV.02(August,2002). 70R, 80 1TTL gate 30 5 0.0-3.0 1.5 1.5 90, 120 UNIT 100 pF ns V V V 4 HANBit Electronics Co., Ltd HANBit 3.0V 2.7kΩ Device Under Test CL IN3064 or Equivalent HMF4M32M8V 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL Write tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Typ Typ Min 35 35 30 9 0.7 50 0 0 35 50 ns ns ns ns µs sec µs W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Min Min Min Min Min Min Min 45 35 45 35 0 0 0 ns 70R 70 80 80 0 45 45 50 50 90 90 120 120 ns ns ns ns ns ns Speed Options UNIT Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL:www.hbe.co.kr REV.02(August,2002). 5 HANBit Electronics Co., Ltd HANBit u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 35 35 45 35 45 35 -70R 70 -80 80 HMF4M32M8V Speed Options UNIT -90 90 0 45 45 0 0 0 0 0 35 30 9 0.7 50 50 50 120 120 ns ns ns ns ns ns ns ns ns ns ns µs sec Notes : 1. This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL:www.hbe.co.kr REV.02(August,2002). 6 HANBit Electronics Co., Ltd HANBit u READ OPERATIONS TIMING HMF4M32M8V u RESET TIMING URL:www.hbe.co.kr REV.02(August,2002). 7 HANBit Electronics Co., Ltd HANBit u PROGRAM OPERATIONS TIMING HMF4M32M8V u CHIP/SECTOR ERASE OPERATION TIMINGS URL:www.hbe.co.kr REV.02(August,2002). 8 HANBit Electronics Co., Ltd HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF4M32M8V u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL:www.hbe.co.kr REV.02(August,2002). 9 HANBit Electronics Co., Ltd HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF4M32M8V u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL:www.hbe.co.kr REV.02(August,2002). 10 HANBit Electronics Co., Ltd HANBit PACKAGE DIMENSIONS (UNIT : mm) HMF4M32M8V 2.54 mm 0.25 mm MAX MIN Gold: 1.04±0.10 mm 1.27 Solder: 0.914±0.10 mm 1.27±0.08 mm (Solder & Gold Plating) ORDERING INFORMATION Component Number 8EA 8EA 8EA 8EA Part Number Density Org. Package Vcc SPEED HMF4M32M8V-70 HMF4M32M8V-80 HMF4M32M8V-90 HMF4M32M8V-120 16MByte 16MByte 16MByte 16MByte 4Mx 32bit 4Mx 32bit 4Mx 32bit 4Mx 32bit 72Pin -SIMM 72Pin -SIMM 72Pin -SIMM 72Pin -SIMM 3.3V 3.3V 3.3V 3.3V 70ns 80ns 90ns 120ns URL:www.hbe.co.kr REV.02(August,2002). 11 HANBit Electronics Co., Ltd