HMF2M32F4VSB-120

HANBit HMF2M32F4VSB Flash-ROM Module 8MByte (2Mx32Bit), 80Pin-SMM, 3.3V Design Part No. HMF2M32F4VSB GENERAL DESCRIPTION The HMF2M32F4VSB is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTL-compatible. FEATURES P1 w Part Identification - HMF2M32F4VSB : Socket 5mm w Access time: 90, 100, 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3.0V ± 0.5V power supply w All in/outputs are LVTTL-compatible w FR4-PCB design w 80-pin Designed by 40-pin Fine Pitch Connector (x 2EA) w Minimum 1,000,000 write/erase cycle w Sector erases architecture PIN 1 2 3 4 5 6 7 8 9 10 11 12 Symbol VCC CE0* NC NC NC RY_BY* VSS RESET* W E* A10 A21 A20 A19 VSS A18 A17 A16 A15 A14 VCC PIN ASSIGNMENT P2 PIN 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Symbol VCC DQ16 DQ24 DQ17 DQ25 DQ18 VSS DQ26 DQ19 DQ27 DQ20 DQ28 DQ21 VSS DQ29 DQ22 DQ30 DQ23 DQ31 VCC PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol VCC DQ15 DQ7 DQ14 DQ6 DQ13 VSS DQ5 DQ12 DQ4 DQ11 DQ3 DQ10 VSS DQ2 DQ9 DQ1 DQ8 DQ0 VCC PIN 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Symbol VCC NC NC BYTE* OE* CE1* VSS A13 A29 A11 A12 A22 A23 VSS A24 A25 A26 A27 A28 VCC OPTIONS w Timing 90ns access 100ns access 120ns access w Packages 80-pin SMM MARKING -90 -100 -120 13 14 15 16 17 18 F 19 20 4 cf : Address & Data Bus is organized for LG Specification. ( A10 & DQ0 are MSB, A29 & DQ31 are LSB) URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM HMF2M32F4VSB 32 DQ0 - DQ31 20 A10 – A29 A10-29 DQ16-31 /WE /OE /CE RY-BY /Reset U1 A10-29 DQ 0-15 /WE /OE /CE0 /CE RY-BY /Reset U2 A10-29 DQ16-31 /WE /OE /CE RY-BY /Reset U3 A10-29 DQ 0-15 /WE /OE /CE1 RY_/BY /Reset /WE /OE /CE RY-BY /Reset U4 URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L /RESET Vcc±0.3V H H H HMF2M32F4VSB DQ ( /BYTE=L ) HIGH-Z HIGH-Z DOUT DIN POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -0.5V to Vcc+0.5V -0.5V to +4.0V -65oC to +150oC Operating Temperature TA -40oC to +85oC w Stresses greater than those listed un der " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ± 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 2.7V 0 TYP. 3.0 0 MAX 3.6V 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current (1) /OE = VIH, Vcc Active Write Current (2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes: /CE = V IL, /OE=VIH /CE, /RESET=Vcc ±0.3V 1MHZ ICC2 ICC3 VLKO TEST CONDITIONS Vcc=Vcc max, VIN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc =Vcc min /CE = VIL, 5MHZ ICC1 1.5 32 120 120 mA mA V SYMBOL IL1 IL0 VOH VOL MIN -10 -10 0.85x Vcc MAX 1.0 1.0 0.4 64 mA UNIT µA µA V V 1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz). 2. Icc active while embedded algorithm (program or erase) is in progress 3. Not 100% tested ERASE AND PROGRAMMING PERFORMANCE URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit LIMITS PARAMETER MIN. Block Erase Time Chip Erase Time W ord Programming Time Chip Programming Time TYP. 0.7 27 11 12 330 36 MAX. 15 sec sec µs sec UNIT HMF2M32F4VSB COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance TEST SETUP VIN = 0 VOUT = 0 VIN = 0 MIN MAX 10 10 10 UNIT pF pF pF Notes : Capacitance is periodically sampled and not 100% tested. TEST SPECIFICATIONS TEST CONDITION Output load Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels VALUE 1TTL gate 5 0 to 3 1.5 1.5 ns V V V UNIT 5.0V IN3064 or Equivalent 2.7kΩ Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit AC CHARACTERISTICS u Read Only Operations Characteristics SPEED PARAMETER DESCRIPTION MIN tRC tACC tCE tOE tDF tOEH tQH Read Cycle Time Address Access time Chip Enable to Access time Output Enable time Chip Enable to Output High-Z Output Enable Hold Time Output Hold Time From Addresses, /CE or /OE 0 0 90 90 90 35 30 0 0 - 90 MAX MIN 100 100 100 40 30 -100 MAX HMF2M32F4VSB -120 MIN 120 120 120 50 30 0 0 MAX UNIT ns ns ns ns ns ns ns u Erase/Program Operations Alternate /WE Controlled Writes - 90 PARAMETER tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tPGM tBERS tVCS tRB tRH tRPD tRP tRSTS DESCRIPTION W rite Cycle Time (1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Programming Operation Block Erase Operation (2) Vcc set up time W rite Recover Time Before RY_/BY /RESRT High Before Read /RESRT to Power Down Time /RESRT Pulse Width /RESRT Setup Time 0.7 50 0 50 20 500 500 MIN 90 0 45 45 0 0 0 0 0 45 30 11 0.7 50 0 50 20 500 500 MAX MIN 100 0 45 45 0 0 0 0 0 45 30 11 0.7 50 0 50 20 500 500 -100 MAX MIN 120 0 50 50 0 0 0 0 0 50 30 11 -120 MAX ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes : : 1. Not 100% tested 2 . The duration of the program or erase operation varies and is calculated in the internal algorithms. URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit u Erase/Program Operations Alternate /CE Controlled Writes - 90 PARAMETER tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tPGM tBERS DESCRIPTION MIN W rite Cycle Time(1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Programming Operation Block Erase Operation (2) 0.7 90 0 45 45 0 0 0 0 0 45 30 11 0.7 MAX MIN 100 0 45 45 0 0 0 0 0 45 30 11 MAX -100 HMF2M32F4VSB -120 MIN 120 0 50 50 0 0 0 0 0 50 30 11 0.7 MAX ns ns ns ns ns ns ns ns ns ns ns ns ns Notes : 1. Not 100% tested 2 . This does not include the preprogramming time u READ OPERATIONS TIMING URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit u RESET TIMING HMF2M32F4VSB u PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit Alternate /CE Controlled Writes HMF2M32F4VSB u CHIP/BLOCK ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSB u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION HMF2M32F4VSB URL: www.hbe.co.kr Ltd. REV.02(August,2002) 10 HANBit Electronics Co., HANBit PACKAGE DIMMENSIONS Unit : mm HMF2M32F4VSB PCB Thickness : 1.3 ± 0.1mm URL: www.hbe.co.kr Ltd. REV.02(August,2002) 11 HANBit Electronics Co., HANBit HMF2M32F4VSB ORDERING INFORMATION Component Number 4EA 4EA 4EA Part Number Density Org. Package Vcc SPEED HMF2M32F4VSB-90 HMF2M32F4VSB-100 HMF2M32F4VSB-120 8MByte 8Mbyte 8Mbyte x 32 80Pin – SMM 80Pin – SMM 80Pin – SMM 3.3V 3.3V 3.3V 90ns 100ns 120ns x 32 x 32 URL: www.hbe.co.kr Ltd. REV.02(August,2002) 12 HANBit Electronics Co.,