HMF2M32B4VN-120

HANBit HMF2M32B4VN FLASH-ROM MODULE 8MByte (2M x 32Bit), 144-Pin SODIMM, 3.3V Part No. HMF2M32B4VN GENERAL DESCRIPTION The HMF2M32B4VN is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x32bit configuration. The module consists of four 2M x 8bit FROM mounted on a 144-pin, double-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CS0, /CS1, /CS2, /CS3, /CS4, /CS5, /CS6, CS7) are used to enable the module ’s 4 bytes independently. Outputs enable (/OE) and write enable (/WE) can set the memory input and output.When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are TTL -compatible. FEATURES w Part Identifications HMF2M32B4VN : 8Mbyte, 144-pin SODIMM, Gold wAccess time : 70, 90 and 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3V ± 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 144-pin SODIMM w Minimum 1,000,000 write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotection w The used device is 2Mx8bit 48Pin TSOP OPTIONS w Timing 70ns access 90ns access 120ns access w Packages 144-pin SODIMM MARKING -70 -90 -120 B ,URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit HMF2M32B4VN PIN ASSIGNMENT PIN 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 Front Vss DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 Vss /CS0 /CS1 VCC A0 A1 A2 Vss DQ8 DQ9 DQ10 DQ11 VCC DQ12 PIN 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Back Vss NC NC NC NC VCC NC NC NC NC Vss NC(/CS4 ) NC(/CS5 ) VCC A3 A4 A5 Vss NC NC NC NC VCC NC PIN 49 51 53 55 57 59 61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 Frontl DQ13 DQ14 DQ15 Vss NC NC NC VCC NC /WE A13 A14 A15 Vss A19 A20 VCC DQ16 DQ17 DQ18 DQ19 Vss DQ20 DQ21 PIN 50 52 54 56 58 60 62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 Back NC NC NC Vss NC NC NC VCC NC /OE A16 A17 A18 Vss A21 NC VCC NC NC NC NC Vss NC NC PIN 97 99 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143 Front DQ22 DQ23 VCC A6 A8 Vss A9 A10 VCC /CS2 /CS3 Vss DQ24 DQ25 DQ26 DQ27 VCC DQ28 DQ29 DQ30 DQ31 Vss NC VCC PIN 98 100 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144 Back NC NC VCC A7 NC Vss A12 A11 VCC NC(/CS6) NC(/CS7) Vss NC NC NC NC VCC NC NC RY_/BY /RESET Vss NC VCC ,URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM DQ32 DQ 0-DQ31 A0-A20 A21 HMF2M32B4VN A0 A1-A20 DQ15/A1 A0-19 DQ0-7 /WE /OE U1 /CE /CS0 DQ15/A1 A0-19 /WE /OE /CS1 DQ15/A1 A0-19 DQ16-23 /WE /OE DQ8-15 U2 /CE U3 /CE /CS2 DQ15/A1 A0-19 /WE /OE DQ24-31 /WE /OE U4 /CE /CS3 /RESET FROM U1 - U8 RY_/BY FROM U1 - U8 ,URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don ’t care /OE X H L H /CE Vcc± 0.3 L L L /WE X H H L DQ HIGH-Z HIGH-Z Dout Din HMF2M32B4VN POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -0.5V to +0.5V -0.5V to +4.0V -65oC to +150oC Operating Temperature TA -55Oc to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause per manent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rat ing conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ±5% device Supply Voltages Vcc for ± 10% device Supply Voltages Ground SYMBOL VCC Vcc VSS MIN 3.0V 2.7V 0 0 TYP. MAX 3.6V 3.6V 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE = VIL, /OE=VIH, /CE = VIL, /OE=VIH /CE= VIH SYMBOL IL1 IL0 0.85* VOH VCC VOL ICC1 ICC2 ICC3 VLKO 36 80 0.8 2.3 0.45 64 120 20 2.5 V mA mA mA V V MIN MAX ±1.0 ±1.0 UNITS µA µA ,URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time Byte Programming Time Chip Programming Time TYP. 0.7 9 18 MAX. 15 300 54.8 Sec µs Sec UNIT HMF2M32B4VN COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead Excludes system-level overhead CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance o TEST SETUP VIN = 0 VOUT = 0 VIN = 0 TYP. 24 34 30 MAX 30 4812 369 UNIT pF pF pF Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC TAVAV TAVQV TELQV TGLQV TEHQZ TGHQZ TAXQX STANDARD tRC tACC tCE tOE tDF tDF tQH Read Cycle Time Address to Output Delay Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First /CE = VIL /OE = VIL /OE = VIL Min Max Max Max Max Max Min Speed Options DESCRIPTION TEST SETUP 70R 70 70 70 30 25 125 0 80 80 80 80 30 25 25 0 -90 90 90 90 35 30 30 0 -120 120 120 120 50 30 30 0 ns ns ns ns ns ns ns UNIT Notes : Test Conditions Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF Input rise and fall times : 5 ns , In case of 55ns-5ns Input pulse levels : 0 .45V to 2.4V, In case of 55ns- 0.0V-3.0V Timing measurement reference level Input : 0.8V, Incase of 55ns-1.5V Output : 2.0V, In case of 55ns-1.5V ,URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit 3.3V HMF2M32B4VN 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS JEDEC TAVAV TAVWL TWLAX TDVWH TWHDX STANDARD tWC tAS tAH tDS tDH tOES TGHWL TELWL TWHEH TWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min 35 35 30 9 0.7 50 45 35 45 35 0 0 0 0 0 45 50 Speed Options DESCRIPTION 70R 70 80 80 0 45 45 50 50 -90 90 -120 120 ns ns ns ns ns ns ns ns ns ns ns µs sec µs UNIT Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations ,URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /WE Setup Time /WE Hold Time /CE Pulse Width /CE Pulse Width High Byte Programming Operation Sector Erase Operation (Note) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 35 45 35 70R 70 HMF2M32B4VN SPEED OPTION 80 80 0 45 35 0 0 0 0 0 35 20 9 0.7 45 50 45 45 50 50 -90 90 -120 120 UNIT ns ns ns ns ns ns ns ns ns ns ns µs sec Notes : This does not include the preprogramming time. ,URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF2M32B4VN u RESET TIMING ,URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF2M32B4VN u CHIP/SECTOR ERASE OPERATION TIMINGS ,URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF2M32B4VN u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) ,URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF2M32B4VN u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS ,URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS Unit : mm HMF2M32B4VN PCB Thickness: 1.0mm (1.0t - 1.1t) Immersion Gold PCB Pattern 2.3 mm MAX 2.55 mm 0.25 mm MAX MIN 0.8 mm 0.60±0.05 mm 1.0 ± 0.1mm (Solder & Gold Plating) ,URL: www.hbe.co.kr REV.02(August,2002) 12 HANBit Electronics Co., Ltd. HANBit ORDERING INFORMATION Part Number HMF2M32B4VN Density Org. Package Components Composition TSOP(2Mx8)*4 TSOP(2Mx8)*4 TSOP(2Mx8)*4 Vcc SPEED HMF2M32B4VN-70 HMF2M32B4VN-90 HMF2M32B4VN-120 8MByte 8MByte 8MByte 2MX 32bit 2MX 32bit 144 Pin-SODIMM 144 Pin-SODIMM 144 Pin-SODIMM 3.3V 3.3V 3.3V 70ns 90ns 120ns 2MX 32bit ,URL: www.hbe.co.kr REV.02(August,2002) 13 HANBit Electronics Co., Ltd.