HMF4M32B8V-120

HANBit HMF4M32B8V Flash-ROM Module 16MByte (4Mx32Bit), 72Pin-SO-DIMM, 3.3V Design Part No. HMF4M32B8V GENERAL DESCRIPTION The HMF4M32B8V is a high-speed flash read only memory (FROM) module containing 8,388,608words organized in a x32bit configuration. The module consists of eight 1M x 16 FROM mounted on a 72-pin SO-DIMM type, double - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3.0V DC power supply and all inputs and outputs are LVTTLcompatible. FEATURES Access time: 70, 80, 90, 120ns High-density 16MByte design High-reliability, low-power design Single + 3.0V ± 0.5V power supply All in/outputs are LVTTL-compatible FR4-PCB design Minimum 10,000,000 write/erase cycle Sector erases architecture PIN 1 2 3 4 5 6 7 Symbol Vss /RESET DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 Vcc DQ7 /CE_1L /CE_2L DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 PIN 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 PIN ASSIGNMENT Symbol DQ15 /CE_4L /CE_3H DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 Vcc DQ22 DQ23 /CE_1H /CE_2H DQ24 DQ25 DQ26 DQ27 Vss DQ28 PIN 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 Symbol DQ29 DQ30 DQ31 NC /CE_4H /CE_3L A19 /OE /WE A18 A17 A16 A15 A14 A13 A12 A11 A10 Vcc A9 PIN 61 62 63 64 65 66 67 68 69 70 71 72 Symbol A8 A7 A6 A5 A4 A3 A2 A1 A0 A20 NC Vss OPTIONS Timing 70ns access 80ns access 90ns access 120ns access Packages 72-pin SO-DIMM MARKING -70 8 9 10 11 -80 12 -90 -120 13 14 15 B 16 17 18 19 20 URL :www.hbe.co.kr REV.00(October,2003) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A0 – A20 21 32 HMF4M32B8V A0-20 A0-20 DQ 0-15 DQ 0-15 /WE /WE /OE /CE_IL /CE RY-BY /Reset U1 /CE_3L /OE /CE RY-BY /Reset U5 A0-20 DQ 16-31 /WE /OE /CE_IH A0-20 DQ 16-31 /WE /OE U3 U6 /CE_3H /CE RY-BY /Reset /CE RY-BY /Reset A0-20 DQ 0-15 /WE /OE /CE_2L /CE RY-BY /Reset A0-20 DQ 0-15 /WE /OE /CE_4L U2 U7 /CE RY-BY /Reset A0-20 DQ 16-31 /WE /OE /CE_2H /RY_BY /RESET /WE /OE /CE RY-BY /Reset A0-20 DQ 16-31 /WE /OE /CE_4H U4 U8 /CE RY-BY /Reset TRUTH TABLE 2 URL :www.hbe.co.kr REV.00(October,2003) HANBit Electronics Co., Ltd. HANBit MODE STANDBY NOT SELECTED READ WRITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L /RESET Vcc±0.3V H H H HMF4M32B8V DQ ( /BYTE=L ) HIGH-Z HIGH-Z DOUT DIN POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -0.5V to Vcc+0.5V -0.5V to +4.0V -65oC to +150oC Operating Temperature TA -55oC to +125oC Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ± 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 2.7V 0 0 TYP. MAX 3.6V 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ( 70 oC ) parameter Input Load Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current (1) Vcc Active Write Current (2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max test Conditions Vcc=Vcc max, VIN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc =Vcc min /CE = VIL, /OE = VIH, /CE = VIL, /OE=VIH /CE, /RESET=Vcc±0.3V 5MHZ ICC1 1MHZ ICC2 ICC3 VLKO 2.3 4 40 8 60 40 2.5 mA mA V Symbol IL1 IL0 VOH VOL 18 2.4 0.45 32 mA Min Max 1.0 ±1.0 Unit µA µA V V ERASE AND PROGRAMMING PERFORMANCE URL :www.hbe.co.kr REV.00(October,2003) 3 HANBit Electronics Co., Ltd. HANBit PARAMETER MIN. Sector Erase Time Chip Erase Time Word Programming Time Chip Programming Time LIMITS TYP. 0.7 25 11 12 360 36 MAX. 15 sec sec µs sec UNIT HMF4M32B8V COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance o TEST SETUP VIN = 0 VOUT = 0 VIN = 0 MIN 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF Notes : Test conditions TA = 25 C, f=1.0 MHz. AC Characteristics ( Read Only Operations Characteristics ) Parameter Symbols Description JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX Standard tRC tACC tCE tOE tDF tDF tQH Read Cycle Time Address to Output Delay Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First /CE =VIL /OE = VIL /OE = VIL Min Max Max Max Max Max Min Test Setup -70r 70 70 70 30 25 25 -80 80 80 80 30 25 25 0 -90 90 90 90 35 30 30 -120 120 120 120 35 30 30 ns ns ns ns ns ns ns speed Options Unit TEST SPECIFICATIONS TEST CONDITION Output load Output load capacitance,CL (Including jig capacitance) Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 30 5 0.0-3.0 1.5 1.5 70R, 80 1TTL gate 100 pF ns V V V 90, 120 UNIT URL :www.hbe.co.kr REV.00(October,2003) 4 HANBit Electronics Co., Ltd. HANBit 5.0V HMF4M32B8V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min 35 35 30 9 0.7 50 45 35 45 35 0 0 0 0 0 35 50 70R 70 80 80 0 45 45 50 50 90 90 120 12 ns ns ns ns ns ns ns ns ns ns ns µs sec µs Speed Options UNIT Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL :www.hbe.co.kr REV.00(October,2003) 5 HANBit Electronics Co., Ltd. HANBit Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 35 35 30 9 0.7 45 35 45 35 0 0 0 0 0 -70R 70 -80 80 0 HMF4M32B8V Speed Options UNIT -90 90 120 12 ns ns 45 45 50 50 ns ns ns ns ns ns ns 35 50 ns ns µs sec Notes : 1. This does not include the preprogramming time 2 . This timing is only for Sector Protect operations READ OPERATIONS TIMING URL :www.hbe.co.kr REV.00(October,2003) 6 HANBit Electronics Co., Ltd. HANBit RESET TIMING HMF4M32B8V PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes Alternate /CE Controlled Writes URL :www.hbe.co.kr REV.00(October,2003) 7 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V CHIP/BLOCK ERASE OPERATION TIMINGS DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION URL :www.hbe.co.kr REV.00(October,2003) 8 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V
RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION URL :www.hbe.co.kr REV.00(October,2003) 9 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V PACKAGE DIMENSIONS URL :www.hbe.co.kr REV.00(October,2003) 10 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V 3.4 mm MAX 1.0 ±0.1mm ORDERING INFORMATION URL :www.hbe.co.kr REV.00(October,2003) 11 HANBit Electronics Co., Ltd. HANBit Part Number Density Org. Package Component Number 8EA 8EA 8EA 8EA Vcc HMF4M32B8V SPEED HMF4M32B8V-70 HMF4M32B8V-80 HMF4M32B8V-90 HMF4M32B8V-120 16MByte 16MByte 16MByte 16MByte 4Mx 32 4Mx 32 4Mx 32 4Mx 32 72Pin –SODIMM 72Pin –SODIMM 72Pin –SODIMM 72Pin –SODIMM 3.3V 3.3V 3.3V 3.3V 70ns 80ns 90ns 120ns URL :www.hbe.co.kr REV.00(October,2003) 12 HANBit Electronics Co., Ltd.