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HMF51232J4V-55

HMF51232J4V-55

  • 厂商:

    HANBIT

  • 封装:

  • 描述:

    HMF51232J4V-55 - FLASH-ROM MODULE 2MByte (512K x32-Bit) - 68-Pin JLCC - Hanbit Electronics Co.,Ltd

  • 数据手册
  • 价格&库存
HMF51232J4V-55 数据手册
HANBit HMF51232J4V FLASH-ROM MODULE 2MByte (512K x32-Bit) – 68-Pin JLCC Part No. HMF51232J4V GENERAL DESCRIPTION The HMF51232J4V is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit configuration. The module consists of four 512Kx 8 FROM mounted on a 68-pin, JLCC FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/CE1, /CE2, /CE3, /CE4) are used to enable the module ’s 4 bytes independently. Output enabl e (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition, the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +3 .3V DC power supply and all inputs and outputs are LVTTLcompatible. FEATURES w Access time : 55,70, 90 and 120ns w High-reliability, low-power design w Single + 3V ± 0.3V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 68-pin JLCC w Minimum 1,000,000 write/erase cycle w Sector erases architecture w Sector group protection w Temporary sector group unprotection w The used device is Am29LV040B w High-density 2MByte design PIN ASSIGNMENT DQ1 6 A1 8 A1 7 / CE4 / CE3 / CE2 / CE1 NC Vcc NC NC / OE /WE A1 6 A1 5 A1 4 DQ1 5 DQ17 DQ18 DQ19 Vss DQ20 DQ21 DQ22 DQ23 Vcc DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 10 9 8 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 26 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 OPTIONS w Timing 55ns access 70ns access 90ns access 120ns access w Packages 68-pin JLCC MARKING -55 -70 -90 -120 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ9 DQ8 Vcc DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 J URL: www.hbe.co.kr REV.02(August,2002) DQ3 1 A6 A5 A4 A3 A2 A1 A0 Vcc A1 3 A1 2 A1 1 A1 0 A9 A8 A7 DQ0 68-pin JLCC TOP VIEW 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM 32 19 HMF51232J4V DQ0 - DQ31 A0 - A18 A0-18 /WE /OE /CE DQ 0-7 U1 /CE1 A0-18 /WE /OE /CE /CE2 A0-18 /WE /OE /CE3 A0-18 /WE /OE /WE /OE /CE /CE4 DQ24-31 DQ16-23 DQ 8-15 U2 U3 /CE U4 TRUTH TABLE MODE READ W RITE STANDBY OUTPUT DISABLE Reset Sector Protect /CE L L Vcc±0.3V L X L /OE L H X H X H /WE H L X H X L DQ DOUT DIN HIGH-Z HIGH-Z HIGH-Z DIN,DOUT A6=L,A1=H,A0=L ADDRESSES AIN AIN X X X Sector Address, URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit Sector Unprotect Temporary Sector Unprotect Note : X means don't care L X H X L X DIN,DOUT HMF51232J4V Sector Address, A6=L,A1=H,A0=L DIN AIN ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -0.5V to Vcc +0.5V -0.5V to +4.0V -65oC to +150 oC Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only a nd functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for regulated voltage range Vcc for full voltage range Ground SYMBOL VCC Vcc VSS MIN 3.0V 2.7V 0 0 TYP. MAX 3.6V 3.6V 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program /CE = VIL, /OE=VIH or Erase(2) Vcc Standby Current Vcc Reset Current Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than than 2mA/MHz, with /OE at V IH. Typical Vcc is 3.0V 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max /CE=Vcc±0.3V ICC3 ICC4 VLKO 2.3 5 5 2.5 mA mA V ICC2 30 mA TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, V out= GND to Vcc IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc =Vcc min /CE = VIL, /OE=VIH, f=5mHz SYMBOL IL1 IL0 VOH VOL ICC1 0.85Vcc 0.45 12 MIN MAX ±1.0 ±1.0 UNITS µA µA V V mA URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time TYP. 1.7 MAX. UNIT HMF51232J4V COMMENTS Excludes 00H programming 15 sec prior to erasure Excludes system-level Byte Programming Time - 9 300 us overhead Excludes system-level Chip Programming Time - 4.5 13.5 sec overhead CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance o TYP. 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF VIN = 0 VOUT = 0 VIN = 0 Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tRC tACC Address to Output Delay /OE = VIL tELQV tGLQV tEHQZ tGHQZ tAXQX tCE tOE tDF tDF tQH /CE or /OE, Whichever Occurs First Notes : Test Conditions : Output Load : 1TTL gate and 100 pF Input rise and fall times : 5 ns Input pulse levels : 0V to 3.0V Timing measurement reference level Input : 1.5V / Output : 1.5V Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, Min 0 0 ns /OE = VIL Max Max Max Max 55 30 25 25 90 35 30 30 ns ns ns ns Read Cycle Time /CE = V IL Max 55 90 ns Min 55 90 ns DESCRIPTION TEST SETUP -55 -90 UNIT URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF51232J4V 3.3V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Write/Erase/Program Operations Alternate /WE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) -55 Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min 55 0 45 35 0 0 0 0 0 35 30 9 0.7 50 -90 90 0 45 45 0 0 0 0 0 35 30 9 0.7 50 UNIT ns ns ns ns ns ns ns ns ns ns ns µs sec µs W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc Setup Time 5 HANBit Electronics Co., Ltd. HANBit u Write/Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /WE Setup Time /WE Hold Time /CE Pulse Width /CE Pulse Width High Byte Programming Operation Sector Erase Operation (Note) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 55 0 45 35 0 0 0 0 0 35 30 9 0.7 -55 HMF51232J4V -90 90 0 45 45 0 0 0 0 0 35 30 9 0.7 UNIT ns ns ns ns ns ns ns ns ns ns ns µs sec Notes : This does not include the preprogramming time. URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF51232J4V u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF51232J4V u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF51232J4V u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF51232J4V u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS 68-Pin JLCC HMF51232J4V 24.94±0.20mm 4.30±0.20mm 0.46±0.20mm 23.67±0.20mm 1.278±0.20mm ORDERING INFORMATION Part Number Density Org. Package Component Number 4EA 4EA 4EA 4EA Vcc SPEED HMF51232J4V-55 HMF51232J4V-70 HMF51232J4V-90 HMF51232J4V-120 2MByte 2MByte 2MByte 2MByte 512k×32bit 512k×32bit 512k×32bit 512k×32bit 68Pin-JLCC 68 Pin-JLCC 68 Pin-JLCC 68 Pin-JLCC 3.3V 3.3V 3.3V 3.3V 55ns 70ns 90ns 120ns URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd.
HMF51232J4V-55 价格&库存

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