2SA1194

2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg 1 Rating –60 –60 –7 –1 –2 1 8 150 –55 to +150 Unit V V V A A W W °C °C 2SA1194(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 — — 1000 — — — — Typ — — — — — — 0.7 0.8 Max — –1.0 –1.0 — –2.0 –2.0 — — V V µs µs I C = –500 mA I B1 = –IB2 = –1 mA Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –500 mA*1 I C = –500 mA, IB = –1 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) –10 –3 iC (peak) –1.0 –0.3 –0.1 –0.03 Area of Safe Operation PW =1 Collector Current IC (A) ms 8 IC (max) PW = 10 ms (1 Shot) D (T C O C = pe 25 rat °C ion ) (1 S hot ) 4 0 50 100 Case Temperature TC (°C) 150 Ta = 25°C –0.01 –0.1 –0.3 –1.0 –3 –10 –30 –100 Collector to emitter Voltage VCE (V) 2 2SA1194(K) Typical Output Characteristics P c= .0 –0.8 8W –1 6 0. TC = 25°C – 4 –0. –0.2 –0.1 –0.08 –0.06 .04 –0 DC Current Transfer Ratio vs. Collector Current 100,000 DC current transfer ratio hFE 30,000 10,000 3,000 1,000 300 100 –10 VCE = –3 V Pulse Ta = 75°C 25°C –1,000 Collector Current IC (mA) –800 –600 –400 –0.02 –200 –0.01 mA –0.01 0 IB = 0 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) –30 –100 –300 Collector current IC (mA) –1,000 Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) –10 lC = 500 lB Pulse –3 Switching time t (µs) Ta = 25°C VBE (sat) 10 3 1.0 Switching Time vs. Collector Current toff tstg ton td –1.0 VCE (sat) –0.3 75°C 0.3 0.1 0.03 –0.1 –10 –30 –100 –300 Collector current IC (mA) –1,000 0.01 –10 IC = 500 IB Ta = 25°C –30 –100 –300 Collector current IC (mA) –1,000 Switching Time Test Circuit IC VIN R1 tr, tf ≤ 10ns VIN PW ≥ 10µs duty ratio ≤ 10% lB1 lB2 0 D.U.T. RL – + – VCC td ton Input –10 V 0 Output Response Waveform 10% 90% tstg 10% 90% toff R2 0.002 µ 0.002 µ 50 VBB 6V + 10% 90% 50 µ 50 µ 3 Unit: mm 8.0 ± 0.5 0° 12 φ 3.1 +0.15 –0.1 3.7 ± 0.7 11.0 ± 0.5 2.7 ± 0.4 12 0° 2.3 ± 0.3 120° 1.1 15.6 ± 0.5 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.