2SB566

2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SB566(K) –70 –50 –5 –4 –8 40 150 –55 to +150 2SB566A(K) –70 –60 –5 –4 –8 40 150 –55 to +150 Unit V V V A A W °C °C 2SB566(K), 2SB566A(K) Electrical Characteristics (Ta = 25°C) 2SB566(K) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB566A(K) Max — — — –1 200 — –1.0 –1.2 — — — — Min –70 –60 –5 — 60 35 — — — — — — Typ — — — — — — — — 15 0.3 3.0 2.5 Max — — — –1 200 — –1.0 –1.2 — — — — V V MHz µs µs µs Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –4 V, IC = –1 A VCE = –4 V, IC = –0.1 A I C = –2 A, IB = –0.2 A I C = –2 A, IB = –0.2 A VCE = –4 V, IC = –0.5 A VCC = –10.5 V I C = 10IB1 = –10IB2 = –0.5 A Min –70 –50 –5 — 60 35 — — — — — — Typ — — — — — — — — 15 0.3 3.0 2.5 DC current tarnsfer ratio hFE1* hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat) Gain bandwidth product f T Turn on time Turn off time Storage time Note: B 60 to 120 t on t off t stg 1. The 2SB566(K) and 2SB566A(K) are grouped by h FE1 as follows. C 100 to 200 2 2SB566(K), 2SB566A(K) Maximum Collector Dissipation Curve Area Safe Operation 60 Collector power dissipation PC (W) –10 –5 IC max (Continuous) Collector current IC (A) 40 –2 TC = 25°C D C pe O t ra io n –1.0 –0.5 –0.2 –0.1 –1 (–50 V, –0.22 A) 2SB566 K (–60 V, –0.15 A) 2SB566A K –2 –5 –10 –20 –50 –100 Collector to emitter voltage VCE (V) 20 0 50 100 150 Case temperature TC (°C) Typical Output Characteristics –5 –5 TC = 25°C Collector current IC (A) –70 –60 –50 –40 –30 –20 –10 mA –2 –1.0 –0.5 Typical Transfer Characteristics VCE = –4 V Collector current IC (A) –4 –3 –2 –0.1 –0.05 –0.02 –1 0 –2 –4 IB = 0 –6 –8 –10 –0.01 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 Base to emitter voltage VBE (V) Collector to emitter voltage VCE (V) 25 –25 –0.2 TC = 75 °C 3 2SB566(K), 2SB566A(K) DC Current Transfer Ratio vs. Collector Current 1,000 DC current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 500 200 100 50 20 10 5 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 –5 TC = 75°C 25°C –25°C VCE = –4V –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Collector current IC (A) –5 IC = 10 IB TC = 75°C 25°C –25°C Collector to Emitter Saturation Voltage vs. Collector Current Collector current IC (A) 4 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. 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