2SD669

2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 2SD669 180 120 5 1.5 3 1 20 150 –55 to +150 2SD669A 180 160 5 1.5 3 1 20 150 –55 to +150 Unit V V V A A W W °C °C 2 2SD669, 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD669A Max — — — 10 320 — 1 1.5 — — Min 180 160 5 — 60 30 — — — — Typ — — — — — — — — 140 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz Min 180 120 5 — 60 30 — — — — Typ — — — — — — — — 140 14 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B 2SD669 2SD669A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 — Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 3 Collector current IC (A) Area of Safe Operation (13.3 V, 1.5 A) 1.0 (40 V, 0.5 A) 0.3 0.1 0.03 2SD669 0.01 DC Operation(TC = 25°C) (120 V, 0.04 A) (160 V, 0.02A) 2SD669A 20 10 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 Collector to emitter voltage VCE (V) 3 2SD669, 2SD669A Typical Output Characteristecs 1.0 50 5. 5.4.5 .0 4 3.5 3.0 2.5 Typical Transfer Characteristics 500 Collector current IC (mA) VCE = 5 V Collector current IC (A) 0.8 0.6 TC = 25°C 200 100 P C = 20 2.0 Ta = 75° C W 50 20 10 5 2 1.5 0.4 1.0 0.2 0.5 mA IB = 0 1 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) 0 10 20 30 40 50 Collector to emitter voltage VCE (V) 300 DC current transfer ratio hFE 250 200 150 100 50 1 1 3 10 100 300 1,000 3,000 30 Collector current IC (mA) VCE = 5 V T 5°C a=7 Collector to emitter saturation voltage VCE(sat) (V) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC = 10 IB 1.0 0.8 0.6 =7 25 –25 25 –25 0.4 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 4 –2 25 5 T C 5° C 1,000 2SD669, 2SD669A Base to Emitter Saturation Voltage vs. Collector Current Base to emitter saturation voltage VBE(sat) (V) 1.2 Gain bandwidth product fT (MHz) IC = 10 IB 1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 1,000 25°C TC = – 25 75 Gain Bandwidth Product vs. Collector Current 240 200 160 120 80 40 0 10 VCE = 5 V Ta = 25°C 30 100 300 Collector current IC (mA) 1,000 Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 200 100 50 f = 1 MHz IE = 0 20 10 5 2 1 10 2 5 20 50 100 Collector to base voltage VCB (V) 5 Unit: mm 8.0 ± 0.5 0° 12 φ 3.1 +0.15 –0.1 3.7 ± 0.7 11.0 ± 0.5 2.7 ± 0.4 12 0° 2.3 ± 0.3 120° 1.1 15.6 ± 0.5 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. 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