2SK1520

2SK1519, 2SK1520 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1519, 2SK1520 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1519 2SK1520 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 30 120 30 200 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1519, 2SK1520 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1519 V(BR)DSS 2SK1520 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 15 — — — — — — — — — — 0.11 0.12 25 5800 1550 170 65 170 415 200 1.1 120 3.0 0.15 0.16 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 30 A, VGS = 0 I F = 30 A, VGS = 0, diF/dt = 100 A/µs I D = 15 A, VGS = 10 V, RL = 2 Ω I D = 15 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 15 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1519 I DSS 2SK1520 Gate to source cutoff voltage Static Drain to source 2SK1519 RDS(on) on state resistance 2SK1520 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1519, 2SK1520 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) 1,000 300 Drain Current ID (A) 100 30 10 3 1 0.3 Ta = 25°C 0.1 0 50 100 Case Temperature TC (°C) 150 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 200 100 a are 10 is on) th in DS ( 10 µs 0µ ion by R P t s W era ed 1 m = Op limit DC 10 s is Op ms er (1 ati Sh on ot) (T C= 25 °C ) 2SK1519 2SK1520 Typical Output Characteristics 50 6V 10 V 40 Drain Current ID (A) Drain Current ID (A) 5V 40 Pulse Test 50 Typical Transfer Characteristics VDS = 10 V Pulse Test 30 4.5 V 20 30 20 TC = 75°C 25°C –25°C 10 VGS = 4 V 10 0 4 16 8 12 Drain to Source Voltage VDS (V) 20 0 2 6 8 4 Gate to Source Voltage VGS (V) 10 4 2SK1519, 2SK1520 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) 10 Pulse Test 8 ID = 50 A 5 Pulse Test 2 1 0.5 Static Drain to Source on State Resistance vs. Drain Current 6 4 20 A 2 10 A 0.2 0.1 0.05 2 5 50 100 20 10 Drain Current ID (A) 200 VGS = 10 V, 15 V 0 2 6 8 4 Gate to Source Voltage VGS (V) 10 Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 0.5 VGS = 10 V Pulse Test ID = 50 A 0.3 20 A 100 50 Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test TC = –25°C 25°C 75°C 0.4 20 10 5 0.2 10 A 0.1 2 1 0.5 0 –40 0 80 120 40 Case Temperature TC (°C) 160 1 2 10 5 20 Drain Current ID (A) 50 5 2SK1519, 2SK1520 Body to Drain Diode Reverse Recovery Time 1,000 Reverse Recovery Time t rr (ns) 500 di/dt = 100 A/µs, VGS = 0 Pulse Test Capacitance C (pF) 1,000 Coss 10,000 Ciss Typical Capacitance vs. Drain to Source Voltage 200 100 50 100 Crss VGS = 0 f = 1 MHz 10 20 10 0.5 2 5 20 1 10 Reverse Drain Current IDR (A) 50 0 20 50 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1,000 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V VGS VDS 20 Gate to Source Voltage VGS (V) 1,000 500 Switching Time t (ns) Switching Characteristics td (off) 800 16 200 100 50 tr tf 600 12 td (on) 400 8 200 VDD = 400 V 250 V 100 V ID = 30 A Pulse Test 400 4 20 10 0.5 VGS = 10 V, PW = 2 µs . duty < 1%, VDD = 30 V . 1 2 5 10 20 Drain Current ID (A) 50 0 0 80 240 320 160 Gate Charge Qg (nc) 6 2SK1519, 2SK1520 Reverse Drain Current vs. Sourse to Drain Voltage 50 Reverse Dratin Current IDR (A) Pulse Test 40 30 20 10 VGS = 0, –5 V 10 V 0 0 0.4 0.8 1.6 2.0 1.2 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.05 0.1 θch–c (t) = γS (t) · θch–c θch–c = 0.625°C/W, TC = 25°C PDM PW D = PW T 0.02 0.03 0.01 ulse ot P 1 Sh T 100 µ 1m 10 m Pulse Width PW (s) 100 m 0.01 10 µ 1 10 Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T RL 50 Ω Vin 10 V VDD . = 30 V . Vin Vout 10% 10% 90% 90% td (off) 10% td (on) tr tf 7 Unit: mm 6.0 ± 0.2 5.0 ± 0.2 φ3.3 ± 0.2 20.0 ± 0.3 26.0 ± 0.3 20.0 ± 0.6 2.5 ± 0.3 1.4 3.0 2.2 1.2 +0.25 –0.1 5.45 ± 0.5 1.0 0.6 +0.25 –0.1 2.8 ± 0.2 5.45 ± 0.5 3.8 7.4 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PL — — 9.9 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.