2SK1520

2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1. Gate 2. Drain 3. Source 1 S 2 3 Rev.3.00 Apr 27, 2006 page 1 of 6 2SK1519, 2SK1520 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1519 2SK1520 Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 450 500 ±30 30 120 30 200 150 –55 to +150 Unit V V A A A W °C °C Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK1519 2SK1520 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1519 current 2SK1520 Gate to source cutoff voltage Static drain to source on 2SK1519 state resistance 2SK1520 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 450 500 ±30 — — 2.0 — — 15 — — — — — — — — — Typ — — — — — 0.11 0.12 25 5800 1550 170 65 170 415 200 1.1 120 Max — — ±10 250 3.0 0.15 0.16 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V *3 ID = 15 A, VDS = 10 V *3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 15 A, VGS = 10 V, RL = 2 Ω IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 100 A/µs Rev.3.00 Apr 27, 2006 page 2 of 6 2SK1519, 2SK1520 Main Characteristics Power vs. Temperature Derating 300 Maximum Safe Operation Area 1,000 300 a are 10 his (on) t in DS 10 µs 0µ ion by R P t s W era ed 1 m = Op limit DC 10 s is Op ms er (1 ati Sh on ot) (T C= 25 °C ) Channel Dissipation Pch (W) Drain Current ID (A) 100 30 10 3 1 0.3 0.1 200 100 Ta = 25°C 1 3 10 30 2SK1519 2SK1520 100 300 1,000 0 50 100 150 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 6V 10 V 5V Pulse Test 50 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) Drain Current ID (A) 40 40 30 4.5 V 20 30 20 TC = 75°C 25°C –25°C 10 VGS = 4 V 10 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 ID = 50 A Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 Drain to Source Saturation Voltage VDS (on) (V) 6 4 20 A 2 10 A Static Drain to Source on State Resistance RDS (on) (Ω) 0.2 0.1 0.05 2 5 10 20 50 100 200 VGS = 10 V, 15 V 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.3.00 Apr 27, 2006 page 3 of 6 2SK1519, 2SK1520 Static Drain to Source on State Resistance vs. Temperature 0.5 VGS = 10 V Pulse Test ID = 50 A 0.3 20 A Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 100 50 VDS = 10 V Pulse Test TC = –25°C 25°C 75°C 0.4 20 10 5 0.2 10 A 0.1 2 1 0.5 0 –40 0 40 80 120 160 1 2 5 10 20 50 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 1,000 10,000 di/dt = 100 A/µs, VGS = 0 Pulse Test Capacitance C (pF) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Ciss Reverse Recovery Time t rr (ns) 500 200 100 50 1,000 Coss 100 Crss VGS = 0 f = 1 MHz 10 20 10 0.5 1 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) 1,000 VDD = 100 V 250 V 400 V VGS VDS Switching Characteristics Gate to Source Voltage VGS (V) 20 1,000 500 td (off) Switching Time t (ns) 800 16 600 12 200 100 50 tr tf 400 8 td (on) 200 VDD = 400 V 250 V 100 V 80 160 240 ID = 30 A Pulse Test 320 400 4 20 10 0.5 VGS = 10 V, PW = 2 µs . duty < 1%, VDD = 30 V . 1 2 5 10 20 50 0 0 Gate Charge Qg (nc) Drain Current ID (A) Rev.3.00 Apr 27, 2006 page 4 of 6 2SK1519, 2SK1520 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 20 10 VGS = 0, –5 V 10 V 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch–c (t) = γS (t) • θch–c θch–c = 0.625°C/W, TC = 25°C PDM PW D = PW T 0.02 0.03 0.01 ulse ot P 1 Sh T 100 µ 1m 10 m 100 m 0.01 10 µ 1 10 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T Vin 10% 10% 90% td (on) tr 90% td (off) 10% RL 50 Ω Vin 10 V VDD . = 30 V . Vout tf Rev.3.00 Apr 27, 2006 page 5 of 6 2SK1519, 2SK1520 Package Dimensions Package Name TO-3PL JEITA Package Code  RENESAS Code PRSS0004ZF-A Previous Code TO-3PL / TO-3PLV MASS[Typ.] 9.9g Unit: mm 6.0 ± 0.2 20.0 ± 0.3 φ3.3 ± 0.2 5.0 ± 0.2 26.0 ± 0.3 20.0 ± 0.6 2.5 ± 0.3 1.4 3.0 2.2 1.2 +0.25 –0.1 5.45 ± 0.5 1.0 0.6 +0.25 –0.1 2.8 ± 0.2 5.45 ± 0.5 3.8 7.4 Ordering Information Part Name 2SK1519-E 2SK1520-E Quantity 360 pcs 360 pcs Box (Tube) Box (Tube) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Apr 27, 2006 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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